Chemical etchant dependence of surface structure and morphology on GaN(0001) substrates
We studied the procedure of cleaning GaN(0001) substrate surfaces by wet etching and subsequent annealing in ultrahigh vacuum for two different types of freestanding GaN wafers: hydride vapor phase epitaxy (HVPE) crystal and Na flux liquid phase epitaxy (LPE) crystal wafers. A flat surface containin...
Gespeichert in:
| Veröffentlicht in: | Surface science 2010-08, Vol.604 (15), p.1247-1253 |
|---|---|
| Hauptverfasser: | , , , , , , , |
| Format: | Artikel |
| Sprache: | eng |
| Schlagworte: | |
| Online-Zugang: | Volltext |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | 1253 |
|---|---|
| container_issue | 15 |
| container_start_page | 1247 |
| container_title | Surface science |
| container_volume | 604 |
| creator | Hattori, Azusa N. Kawamura, Fumio Yoshimura, Masashi Kitaoka, Yasuo Mori, Yusuke Hattori, Ken Daimon, Hiroshi Endo, Katsuyoshi |
| description | We studied the procedure of cleaning GaN(0001) substrate surfaces by wet etching and subsequent annealing in ultrahigh vacuum for two different types of freestanding GaN wafers: hydride vapor phase epitaxy (HVPE) crystal and Na flux liquid phase epitaxy (LPE) crystal wafers. A flat surface containing GaN(0001)2
×
2 reconstruction was successfully achieved on both HVPE and LPE surfaces by etching in HF and subsequent annealing at ∼
550
°C but was not achieved by etching in HCl, NaOH, and HNO
3. |
| doi_str_mv | 10.1016/j.susc.2010.04.004 |
| format | Article |
| fullrecord | <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_proquest_miscellaneous_753682550</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><els_id>S0039602810001482</els_id><sourcerecordid>753682550</sourcerecordid><originalsourceid>FETCH-LOGICAL-c428t-7a9ed37323b9359067631ba73b2326138f8045deba9e6e635150f491f140b2cc3</originalsourceid><addsrcrecordid>eNp9kE9LwzAYh4MoOKdfwFMvoh463_xtC15k6BSGXhSPIU3fuo6umUkr7NubsuHRXBLC8_u9vA8hlxRmFKi6W8_CEOyMQfwAMQMQR2RC86xIWSbzYzIB4EWqgOWn5CyENcQjCjkhn_MVbhpr2gR7uzJdn1S4xa7CzmLi6iQMvjbxGXo_2H7wmJiuSjbOb1eudV-7xHXJwrzexD56G-kygqbHcE5OatMGvDjcU_Lx9Pg-f06Xb4uX-cMytYLlfZqZAiueccbLgssCVKY4LU3GS8aZojyvcxCywjJyChWXVEItClpTASWzlk_J9b536933gKHXmyZYbFvToRuCziRXOZMSIsn2pPUuBI-13vpmY_xOU9CjRL3Wo0Q9StQgdDQUQ1eHehOipNqbzjbhL8lYIYApFbn7PYdx158GvQ62GR1WjUfb68o1_435BVZIhqI</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>753682550</pqid></control><display><type>article</type><title>Chemical etchant dependence of surface structure and morphology on GaN(0001) substrates</title><source>Elsevier ScienceDirect Journals</source><creator>Hattori, Azusa N. ; Kawamura, Fumio ; Yoshimura, Masashi ; Kitaoka, Yasuo ; Mori, Yusuke ; Hattori, Ken ; Daimon, Hiroshi ; Endo, Katsuyoshi</creator><creatorcontrib>Hattori, Azusa N. ; Kawamura, Fumio ; Yoshimura, Masashi ; Kitaoka, Yasuo ; Mori, Yusuke ; Hattori, Ken ; Daimon, Hiroshi ; Endo, Katsuyoshi</creatorcontrib><description>We studied the procedure of cleaning GaN(0001) substrate surfaces by wet etching and subsequent annealing in ultrahigh vacuum for two different types of freestanding GaN wafers: hydride vapor phase epitaxy (HVPE) crystal and Na flux liquid phase epitaxy (LPE) crystal wafers. A flat surface containing GaN(0001)2
×
2 reconstruction was successfully achieved on both HVPE and LPE surfaces by etching in HF and subsequent annealing at ∼
550
°C but was not achieved by etching in HCl, NaOH, and HNO
3.</description><identifier>ISSN: 0039-6028</identifier><identifier>EISSN: 1879-2758</identifier><identifier>DOI: 10.1016/j.susc.2010.04.004</identifier><identifier>CODEN: SUSCAS</identifier><language>eng</language><publisher>Kidlington: Elsevier B.V</publisher><subject>Annealing ; Condensed matter: electronic structure, electrical, magnetic, and optical properties ; Condensed matter: structure, mechanical and thermal properties ; Cross-disciplinary physics: materials science; rheology ; Crystals ; Etching ; Exact sciences and technology ; Flux ; Gallium nitrides ; GaN ; Liquid phase epitaxy ; Low-energy electron diffraction ; Physics ; Reflection high-energy electron diffraction ; Scanning tunneling microscopy ; Surface structure ; Vapor phase epitaxy ; Wafers ; Wet cleaning</subject><ispartof>Surface science, 2010-08, Vol.604 (15), p.1247-1253</ispartof><rights>2010 Elsevier B.V.</rights><rights>2015 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c428t-7a9ed37323b9359067631ba73b2326138f8045deba9e6e635150f491f140b2cc3</citedby><cites>FETCH-LOGICAL-c428t-7a9ed37323b9359067631ba73b2326138f8045deba9e6e635150f491f140b2cc3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://dx.doi.org/10.1016/j.susc.2010.04.004$$EHTML$$P50$$Gelsevier$$H</linktohtml><link.rule.ids>314,776,780,3536,27903,27904,45974</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=22940266$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Hattori, Azusa N.</creatorcontrib><creatorcontrib>Kawamura, Fumio</creatorcontrib><creatorcontrib>Yoshimura, Masashi</creatorcontrib><creatorcontrib>Kitaoka, Yasuo</creatorcontrib><creatorcontrib>Mori, Yusuke</creatorcontrib><creatorcontrib>Hattori, Ken</creatorcontrib><creatorcontrib>Daimon, Hiroshi</creatorcontrib><creatorcontrib>Endo, Katsuyoshi</creatorcontrib><title>Chemical etchant dependence of surface structure and morphology on GaN(0001) substrates</title><title>Surface science</title><description>We studied the procedure of cleaning GaN(0001) substrate surfaces by wet etching and subsequent annealing in ultrahigh vacuum for two different types of freestanding GaN wafers: hydride vapor phase epitaxy (HVPE) crystal and Na flux liquid phase epitaxy (LPE) crystal wafers. A flat surface containing GaN(0001)2
×
2 reconstruction was successfully achieved on both HVPE and LPE surfaces by etching in HF and subsequent annealing at ∼
550
°C but was not achieved by etching in HCl, NaOH, and HNO
3.</description><subject>Annealing</subject><subject>Condensed matter: electronic structure, electrical, magnetic, and optical properties</subject><subject>Condensed matter: structure, mechanical and thermal properties</subject><subject>Cross-disciplinary physics: materials science; rheology</subject><subject>Crystals</subject><subject>Etching</subject><subject>Exact sciences and technology</subject><subject>Flux</subject><subject>Gallium nitrides</subject><subject>GaN</subject><subject>Liquid phase epitaxy</subject><subject>Low-energy electron diffraction</subject><subject>Physics</subject><subject>Reflection high-energy electron diffraction</subject><subject>Scanning tunneling microscopy</subject><subject>Surface structure</subject><subject>Vapor phase epitaxy</subject><subject>Wafers</subject><subject>Wet cleaning</subject><issn>0039-6028</issn><issn>1879-2758</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2010</creationdate><recordtype>article</recordtype><recordid>eNp9kE9LwzAYh4MoOKdfwFMvoh463_xtC15k6BSGXhSPIU3fuo6umUkr7NubsuHRXBLC8_u9vA8hlxRmFKi6W8_CEOyMQfwAMQMQR2RC86xIWSbzYzIB4EWqgOWn5CyENcQjCjkhn_MVbhpr2gR7uzJdn1S4xa7CzmLi6iQMvjbxGXo_2H7wmJiuSjbOb1eudV-7xHXJwrzexD56G-kygqbHcE5OatMGvDjcU_Lx9Pg-f06Xb4uX-cMytYLlfZqZAiueccbLgssCVKY4LU3GS8aZojyvcxCywjJyChWXVEItClpTASWzlk_J9b536933gKHXmyZYbFvToRuCziRXOZMSIsn2pPUuBI-13vpmY_xOU9CjRL3Wo0Q9StQgdDQUQ1eHehOipNqbzjbhL8lYIYApFbn7PYdx158GvQ62GR1WjUfb68o1_435BVZIhqI</recordid><startdate>20100815</startdate><enddate>20100815</enddate><creator>Hattori, Azusa N.</creator><creator>Kawamura, Fumio</creator><creator>Yoshimura, Masashi</creator><creator>Kitaoka, Yasuo</creator><creator>Mori, Yusuke</creator><creator>Hattori, Ken</creator><creator>Daimon, Hiroshi</creator><creator>Endo, Katsuyoshi</creator><general>Elsevier B.V</general><general>Elsevier</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7QQ</scope><scope>7SR</scope><scope>7U5</scope><scope>8BQ</scope><scope>8FD</scope><scope>JG9</scope><scope>L7M</scope></search><sort><creationdate>20100815</creationdate><title>Chemical etchant dependence of surface structure and morphology on GaN(0001) substrates</title><author>Hattori, Azusa N. ; Kawamura, Fumio ; Yoshimura, Masashi ; Kitaoka, Yasuo ; Mori, Yusuke ; Hattori, Ken ; Daimon, Hiroshi ; Endo, Katsuyoshi</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c428t-7a9ed37323b9359067631ba73b2326138f8045deba9e6e635150f491f140b2cc3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2010</creationdate><topic>Annealing</topic><topic>Condensed matter: electronic structure, electrical, magnetic, and optical properties</topic><topic>Condensed matter: structure, mechanical and thermal properties</topic><topic>Cross-disciplinary physics: materials science; rheology</topic><topic>Crystals</topic><topic>Etching</topic><topic>Exact sciences and technology</topic><topic>Flux</topic><topic>Gallium nitrides</topic><topic>GaN</topic><topic>Liquid phase epitaxy</topic><topic>Low-energy electron diffraction</topic><topic>Physics</topic><topic>Reflection high-energy electron diffraction</topic><topic>Scanning tunneling microscopy</topic><topic>Surface structure</topic><topic>Vapor phase epitaxy</topic><topic>Wafers</topic><topic>Wet cleaning</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Hattori, Azusa N.</creatorcontrib><creatorcontrib>Kawamura, Fumio</creatorcontrib><creatorcontrib>Yoshimura, Masashi</creatorcontrib><creatorcontrib>Kitaoka, Yasuo</creatorcontrib><creatorcontrib>Mori, Yusuke</creatorcontrib><creatorcontrib>Hattori, Ken</creatorcontrib><creatorcontrib>Daimon, Hiroshi</creatorcontrib><creatorcontrib>Endo, Katsuyoshi</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Ceramic Abstracts</collection><collection>Engineered Materials Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Surface science</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Hattori, Azusa N.</au><au>Kawamura, Fumio</au><au>Yoshimura, Masashi</au><au>Kitaoka, Yasuo</au><au>Mori, Yusuke</au><au>Hattori, Ken</au><au>Daimon, Hiroshi</au><au>Endo, Katsuyoshi</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Chemical etchant dependence of surface structure and morphology on GaN(0001) substrates</atitle><jtitle>Surface science</jtitle><date>2010-08-15</date><risdate>2010</risdate><volume>604</volume><issue>15</issue><spage>1247</spage><epage>1253</epage><pages>1247-1253</pages><issn>0039-6028</issn><eissn>1879-2758</eissn><coden>SUSCAS</coden><abstract>We studied the procedure of cleaning GaN(0001) substrate surfaces by wet etching and subsequent annealing in ultrahigh vacuum for two different types of freestanding GaN wafers: hydride vapor phase epitaxy (HVPE) crystal and Na flux liquid phase epitaxy (LPE) crystal wafers. A flat surface containing GaN(0001)2
×
2 reconstruction was successfully achieved on both HVPE and LPE surfaces by etching in HF and subsequent annealing at ∼
550
°C but was not achieved by etching in HCl, NaOH, and HNO
3.</abstract><cop>Kidlington</cop><pub>Elsevier B.V</pub><doi>10.1016/j.susc.2010.04.004</doi><tpages>7</tpages></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 0039-6028 |
| ispartof | Surface science, 2010-08, Vol.604 (15), p.1247-1253 |
| issn | 0039-6028 1879-2758 |
| language | eng |
| recordid | cdi_proquest_miscellaneous_753682550 |
| source | Elsevier ScienceDirect Journals |
| subjects | Annealing Condensed matter: electronic structure, electrical, magnetic, and optical properties Condensed matter: structure, mechanical and thermal properties Cross-disciplinary physics: materials science rheology Crystals Etching Exact sciences and technology Flux Gallium nitrides GaN Liquid phase epitaxy Low-energy electron diffraction Physics Reflection high-energy electron diffraction Scanning tunneling microscopy Surface structure Vapor phase epitaxy Wafers Wet cleaning |
| title | Chemical etchant dependence of surface structure and morphology on GaN(0001) substrates |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-23T01%3A10%3A48IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Chemical%20etchant%20dependence%20of%20surface%20structure%20and%20morphology%20on%20GaN(0001)%20substrates&rft.jtitle=Surface%20science&rft.au=Hattori,%20Azusa%20N.&rft.date=2010-08-15&rft.volume=604&rft.issue=15&rft.spage=1247&rft.epage=1253&rft.pages=1247-1253&rft.issn=0039-6028&rft.eissn=1879-2758&rft.coden=SUSCAS&rft_id=info:doi/10.1016/j.susc.2010.04.004&rft_dat=%3Cproquest_cross%3E753682550%3C/proquest_cross%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=753682550&rft_id=info:pmid/&rft_els_id=S0039602810001482&rfr_iscdi=true |