Improving the Dark Current Response of Monocrystalline N-Si Metal Semiconductor-Metal (MSM) Photodetector by Chemical and Thermal Treatment

Improving the Dark Current Response of Monocrystalline N-Si Metal Semiconductor-Metal (MSM) Photodetector by Chemical and Thermal Treatment

We have demonstrated a method to improve the dark current response of monocrystalline N-Si metal-semiconductor-metal (MSM) photodetector. The combination of chemical and cryogenic treatment (77K) have been proven to successfully reducing dark current response in a silicon based MSM photodetector. Th...

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Veröffentlicht in:PERFIK2009 2009-12, Vol.1250, p.149-152
Hauptverfasser: Mohd Yusoff, M Z, Hashim, M R
Format: Artikel
Sprache:eng
Schlagworte:
Atomic force microscopy
Cryogenic treatment
Dark current
Photodetectors
Silicon
Surface roughness
Variability
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Hashim, M R
description We have demonstrated a method to improve the dark current response of monocrystalline N-Si metal-semiconductor-metal (MSM) photodetector. The combination of chemical and cryogenic treatment (77K) have been proven to successfully reducing dark current response in a silicon based MSM photodetector. The combination of treatment with a different chemical solution (RCA, HF & SPM) was investigated. The surface roughness of the samples obtained using AFM technique showed that treated Si sample has better surface uniformity than untreated sample. The XRD results showed that the treated sample has increased intensity compared to those of untreated samples.
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subjects Atomic force microscopy
Cryogenic treatment
Dark current
Photodetectors
Silicon
Surface roughness
Variability
title Improving the Dark Current Response of Monocrystalline N-Si Metal Semiconductor-Metal (MSM) Photodetector by Chemical and Thermal Treatment
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