Thermal Characterization of Junction in Solar Cell Packages
This is the first report on the direct measurement of the junction temperature and on the determination of thermal resistance of a commercial amorphous silicon (a-Si) solar cell package under real operating conditions. Thermal transient method was utilized for the thermal characterization. Irradiati...
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| Veröffentlicht in: | IEEE electron device letters 2010-07, Vol.31 (7), p.743-745 |
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| container_title | IEEE electron device letters |
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| creator | Jang, Sun Ho Shin, Moo Whan |
| description | This is the first report on the direct measurement of the junction temperature and on the determination of thermal resistance of a commercial amorphous silicon (a-Si) solar cell package under real operating conditions. Thermal transient method was utilized for the thermal characterization. Irradiation of sunlight to the solar cell package was found to induce significant heat generation inside the solar cell package. It was shown that the driving of the solar cell package with a sun power of 1 sun (100 mW/cm 2 and 1.5 AM) resulted in a junction temperature of about 113°C. Surprisingly, the temperature difference between the junction and the case surface of the solar cell package was as high as 43°C. The efficiency drop was observed with the increase of junction temperature in the solar cell package. Thermal resistance was determined under various operating conditions. |
| doi_str_mv | 10.1109/LED.2010.2048552 |
| format | Article |
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Thermal transient method was utilized for the thermal characterization. Irradiation of sunlight to the solar cell package was found to induce significant heat generation inside the solar cell package. It was shown that the driving of the solar cell package with a sun power of 1 sun (100 mW/cm 2 and 1.5 AM) resulted in a junction temperature of about 113°C. Surprisingly, the temperature difference between the junction and the case surface of the solar cell package was as high as 43°C. The efficiency drop was observed with the increase of junction temperature in the solar cell package. Thermal resistance was determined under various operating conditions.</description><identifier>ISSN: 0741-3106</identifier><identifier>EISSN: 1558-0563</identifier><identifier>DOI: 10.1109/LED.2010.2048552</identifier><identifier>CODEN: EDLEDZ</identifier><language>eng</language><publisher>New York: IEEE</publisher><subject>Amorphous silicon ; Electrical resistance measurement ; Heat transfer ; Junction temperature ; Packages ; Packaging ; Photovoltaic cells ; solar cell ; Solar cells ; Solar heating ; Solar power generation ; Sun ; Surface resistance ; Temperature ; Thermal resistance ; thermal transient method ; Thermal transients</subject><ispartof>IEEE electron device letters, 2010-07, Vol.31 (7), p.743-745</ispartof><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) Jul 2010</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c364t-948980fa0cc42fedf72b0471a699bad336c326e30654a40afb22bae1ddf9ad6a3</citedby><cites>FETCH-LOGICAL-c364t-948980fa0cc42fedf72b0471a699bad336c326e30654a40afb22bae1ddf9ad6a3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/5471188$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,776,780,792,27903,27904,54736</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/5471188$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Jang, Sun Ho</creatorcontrib><creatorcontrib>Shin, Moo Whan</creatorcontrib><title>Thermal Characterization of Junction in Solar Cell Packages</title><title>IEEE electron device letters</title><addtitle>LED</addtitle><description>This is the first report on the direct measurement of the junction temperature and on the determination of thermal resistance of a commercial amorphous silicon (a-Si) solar cell package under real operating conditions. Thermal transient method was utilized for the thermal characterization. Irradiation of sunlight to the solar cell package was found to induce significant heat generation inside the solar cell package. It was shown that the driving of the solar cell package with a sun power of 1 sun (100 mW/cm 2 and 1.5 AM) resulted in a junction temperature of about 113°C. Surprisingly, the temperature difference between the junction and the case surface of the solar cell package was as high as 43°C. The efficiency drop was observed with the increase of junction temperature in the solar cell package. Thermal resistance was determined under various operating conditions.</description><subject>Amorphous silicon</subject><subject>Electrical resistance measurement</subject><subject>Heat transfer</subject><subject>Junction temperature</subject><subject>Packages</subject><subject>Packaging</subject><subject>Photovoltaic cells</subject><subject>solar cell</subject><subject>Solar cells</subject><subject>Solar heating</subject><subject>Solar power generation</subject><subject>Sun</subject><subject>Surface resistance</subject><subject>Temperature</subject><subject>Thermal resistance</subject><subject>thermal transient method</subject><subject>Thermal transients</subject><issn>0741-3106</issn><issn>1558-0563</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2010</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNpdkE1Lw0AQhhdRsFbvgpeAB0-ps98JnqTWLwoK1vMy2WxsaprU3eSgv97VFg-eZgaed5h5CDmlMKEU8sv57GbCIE4MRCYl2yMjKmWWglR8n4xAC5pyCuqQHIWwAqBCaDEiV4ul82tskukSPdre-foL-7prk65KHofW_vZ1m7x0Dfpk6pomeUb7jm8uHJODCpvgTnZ1TF5vZ4vpfTp_unuYXs9Ty5Xo01xkeQYVgrWCVa6sNCtAaIoqzwssOVeWM-U4KClQAFYFYwU6WpZVjqVCPiYX270b330MLvRmXQcbL8HWdUMwWnKltdI0kuf_yFU3-DYeZygwzZiQGiIFW8r6LgTvKrPx9Rr9Z4TMj0wTZZofmWYnM0bOtpHaOfeHy_gFzTL-DdFEbqw</recordid><startdate>20100701</startdate><enddate>20100701</enddate><creator>Jang, Sun Ho</creator><creator>Shin, Moo Whan</creator><general>IEEE</general><general>The Institute of Electrical and Electronics Engineers, Inc. (IEEE)</general><scope>97E</scope><scope>RIA</scope><scope>RIE</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>8FD</scope><scope>L7M</scope><scope>F28</scope><scope>FR3</scope></search><sort><creationdate>20100701</creationdate><title>Thermal Characterization of Junction in Solar Cell Packages</title><author>Jang, Sun Ho ; Shin, Moo Whan</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c364t-948980fa0cc42fedf72b0471a699bad336c326e30654a40afb22bae1ddf9ad6a3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2010</creationdate><topic>Amorphous silicon</topic><topic>Electrical resistance measurement</topic><topic>Heat transfer</topic><topic>Junction temperature</topic><topic>Packages</topic><topic>Packaging</topic><topic>Photovoltaic cells</topic><topic>solar cell</topic><topic>Solar cells</topic><topic>Solar heating</topic><topic>Solar power generation</topic><topic>Sun</topic><topic>Surface resistance</topic><topic>Temperature</topic><topic>Thermal resistance</topic><topic>thermal transient method</topic><topic>Thermal transients</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Jang, Sun Ho</creatorcontrib><creatorcontrib>Shin, Moo Whan</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 2005–Present</collection><collection>IEEE All-Society Periodicals Package (ASPP) 1998-Present</collection><collection>IEEE Electronic Library (IEL)</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>ANTE: Abstracts in New Technology & Engineering</collection><collection>Engineering Research Database</collection><jtitle>IEEE electron device letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Jang, Sun Ho</au><au>Shin, Moo Whan</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Thermal Characterization of Junction in Solar Cell Packages</atitle><jtitle>IEEE electron device letters</jtitle><stitle>LED</stitle><date>2010-07-01</date><risdate>2010</risdate><volume>31</volume><issue>7</issue><spage>743</spage><epage>745</epage><pages>743-745</pages><issn>0741-3106</issn><eissn>1558-0563</eissn><coden>EDLEDZ</coden><abstract>This is the first report on the direct measurement of the junction temperature and on the determination of thermal resistance of a commercial amorphous silicon (a-Si) solar cell package under real operating conditions. Thermal transient method was utilized for the thermal characterization. Irradiation of sunlight to the solar cell package was found to induce significant heat generation inside the solar cell package. It was shown that the driving of the solar cell package with a sun power of 1 sun (100 mW/cm 2 and 1.5 AM) resulted in a junction temperature of about 113°C. Surprisingly, the temperature difference between the junction and the case surface of the solar cell package was as high as 43°C. The efficiency drop was observed with the increase of junction temperature in the solar cell package. Thermal resistance was determined under various operating conditions.</abstract><cop>New York</cop><pub>IEEE</pub><doi>10.1109/LED.2010.2048552</doi><tpages>3</tpages></addata></record> |
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| issn | 0741-3106 1558-0563 |
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| source | IEEE Electronic Library (IEL) |
| subjects | Amorphous silicon Electrical resistance measurement Heat transfer Junction temperature Packages Packaging Photovoltaic cells solar cell Solar cells Solar heating Solar power generation Sun Surface resistance Temperature Thermal resistance thermal transient method Thermal transients |
| title | Thermal Characterization of Junction in Solar Cell Packages |
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