Al sub(2)O sub(3) tunnel barrier as a good candidate for spin injection into silicon

We report electrical characterisation of NiFe/SiO sub(2)/Si and NiFe/Al sub(2)O sub(3)/Si tunnel diodes that are of potential interest for spin injection into silicon. The effect of the nature of the insulator on the electrical properties of the diode has been studied. Impedance measurements have sh...

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Veröffentlicht in:	Solid-state electronics 2010-08, Vol.54 (8), p.741-744
Hauptverfasser:	Benabderrahmane, R, Kanoun, M, Bruyant, N, Baraduc, C, Bsiesy, A, Achard, H
Format:	Artikel
Sprache:	eng
Schlagworte:	Aluminum oxide Intermetallics Iron compounds Nickel base alloys Nickel compounds Silicon Silicon dioxide Silicon substrates
Online-Zugang:	Volltext
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