Effect of Bi(2)O(3) Additive on the Microstructure and Dielectric Properties of BaTiO(3)-Based Ceramics Sintered at Lower Temperature
High performance X8R dielectric ceramics were prepared by doping BBi(2)O(3) to BaTiCvbased ceramics. The effect of small amounts (
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| Veröffentlicht in: | Journal of materials science & technology 2010-05, Vol.26 (5), p.472-476 |
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| container_title | Journal of materials science & technology |
| container_volume | 26 |
| creator | Wu, Shunhua Wei, Xuesong Wang, Xiaoyong Yang, Hongxing Gao, Shunqi |
| description | High performance X8R dielectric ceramics were prepared by doping BBi(2)O(3) to BaTiCvbased ceramics. The effect of small amounts ( |
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| fullrecord | <record><control><sourceid>proquest</sourceid><recordid>TN_cdi_proquest_miscellaneous_753666040</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>753666040</sourcerecordid><originalsourceid>FETCH-proquest_miscellaneous_7536660403</originalsourceid><addsrcrecordid>eNqNjD1uwkAQRrcgUiDkDtMBhaUNiw1t-BNFUCLFPVqtx2KQ7SUzYzhB7h2DOECqT3r63uuZ_pu1aWKdnT6bgcjJWjdPF4u--d2UJQaFWMKSxtPJ59hN4L0oSOmCEBvQI8KeAkdRboO2jOCbAtaEVecxBfjieEZWQrlXfE63SLL0ggWskH1NQeCbGkXuiFf4iFdkyLHuPH9LDs1T6SvB18e-mNF2k692yZnjT4uih5okYFX5BmMrh3nqsiyzM-v-__wD_3BS_Q</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>753666040</pqid></control><display><type>article</type><title>Effect of Bi(2)O(3) Additive on the Microstructure and Dielectric Properties of BaTiO(3)-Based Ceramics Sintered at Lower Temperature</title><source>Elsevier ScienceDirect Journals Complete</source><source>Alma/SFX Local Collection</source><creator>Wu, Shunhua ; Wei, Xuesong ; Wang, Xiaoyong ; Yang, Hongxing ; Gao, Shunqi</creator><creatorcontrib>Wu, Shunhua ; Wei, Xuesong ; Wang, Xiaoyong ; Yang, Hongxing ; Gao, Shunqi</creatorcontrib><description>High performance X8R dielectric ceramics were prepared by doping BBi(2)O(3) to BaTiCvbased ceramics. The effect of small amounts (<1.2 mol%) of BBi(2)O(3) additive on the microstructure and dielectric properties of BaTi(3)-based ceramics have been investigated. The Bi(2)O(3), acting as a sintering additive, can effectively lower the sintering temperature of BaTiCVbased ceramics from 1300 to 1130 degree C. The bulk density of BaTiO(3) Vbased ceramics increased and reached the maximum value with increasing Bi(2)O(3) content. The dielectric constant increased with increasing Bi(2)O(3) until it reached the maximum value with 0.8 mol% Bi(2)O(3) additive, and the dielectric loss decreased with increasing BBi(2)O(3) content. Optimal dielectric properties of =2470, tan delta =0.011 and Delta epsilon / epsilon (25)< plus or minus 9% (-55-150 degree C) were obtained for the BaTi0(3)-based ceramics doped with 0.8 mol% Bi(2)O(3) sintered at 1130 degree C for 6 h.</description><identifier>ISSN: 1005-0302</identifier><language>eng</language><subject>Additives ; Ceramics ; Dielectric properties ; Dielectrics ; Doping ; Microstructure ; Sintering</subject><ispartof>Journal of materials science & technology, 2010-05, Vol.26 (5), p.472-476</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784</link.rule.ids></links><search><creatorcontrib>Wu, Shunhua</creatorcontrib><creatorcontrib>Wei, Xuesong</creatorcontrib><creatorcontrib>Wang, Xiaoyong</creatorcontrib><creatorcontrib>Yang, Hongxing</creatorcontrib><creatorcontrib>Gao, Shunqi</creatorcontrib><title>Effect of Bi(2)O(3) Additive on the Microstructure and Dielectric Properties of BaTiO(3)-Based Ceramics Sintered at Lower Temperature</title><title>Journal of materials science & technology</title><description>High performance X8R dielectric ceramics were prepared by doping BBi(2)O(3) to BaTiCvbased ceramics. The effect of small amounts (<1.2 mol%) of BBi(2)O(3) additive on the microstructure and dielectric properties of BaTi(3)-based ceramics have been investigated. The Bi(2)O(3), acting as a sintering additive, can effectively lower the sintering temperature of BaTiCVbased ceramics from 1300 to 1130 degree C. The bulk density of BaTiO(3) Vbased ceramics increased and reached the maximum value with increasing Bi(2)O(3) content. The dielectric constant increased with increasing Bi(2)O(3) until it reached the maximum value with 0.8 mol% Bi(2)O(3) additive, and the dielectric loss decreased with increasing BBi(2)O(3) content. Optimal dielectric properties of =2470, tan delta =0.011 and Delta epsilon / epsilon (25)< plus or minus 9% (-55-150 degree C) were obtained for the BaTi0(3)-based ceramics doped with 0.8 mol% Bi(2)O(3) sintered at 1130 degree C for 6 h.</description><subject>Additives</subject><subject>Ceramics</subject><subject>Dielectric properties</subject><subject>Dielectrics</subject><subject>Doping</subject><subject>Microstructure</subject><subject>Sintering</subject><issn>1005-0302</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2010</creationdate><recordtype>article</recordtype><recordid>eNqNjD1uwkAQRrcgUiDkDtMBhaUNiw1t-BNFUCLFPVqtx2KQ7SUzYzhB7h2DOECqT3r63uuZ_pu1aWKdnT6bgcjJWjdPF4u--d2UJQaFWMKSxtPJ59hN4L0oSOmCEBvQI8KeAkdRboO2jOCbAtaEVecxBfjieEZWQrlXfE63SLL0ggWskH1NQeCbGkXuiFf4iFdkyLHuPH9LDs1T6SvB18e-mNF2k692yZnjT4uih5okYFX5BmMrh3nqsiyzM-v-__wD_3BS_Q</recordid><startdate>20100501</startdate><enddate>20100501</enddate><creator>Wu, Shunhua</creator><creator>Wei, Xuesong</creator><creator>Wang, Xiaoyong</creator><creator>Yang, Hongxing</creator><creator>Gao, Shunqi</creator><scope>7QQ</scope><scope>7SR</scope><scope>8BQ</scope><scope>8FD</scope><scope>JG9</scope></search><sort><creationdate>20100501</creationdate><title>Effect of Bi(2)O(3) Additive on the Microstructure and Dielectric Properties of BaTiO(3)-Based Ceramics Sintered at Lower Temperature</title><author>Wu, Shunhua ; Wei, Xuesong ; Wang, Xiaoyong ; Yang, Hongxing ; Gao, Shunqi</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-proquest_miscellaneous_7536660403</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2010</creationdate><topic>Additives</topic><topic>Ceramics</topic><topic>Dielectric properties</topic><topic>Dielectrics</topic><topic>Doping</topic><topic>Microstructure</topic><topic>Sintering</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Wu, Shunhua</creatorcontrib><creatorcontrib>Wei, Xuesong</creatorcontrib><creatorcontrib>Wang, Xiaoyong</creatorcontrib><creatorcontrib>Yang, Hongxing</creatorcontrib><creatorcontrib>Gao, Shunqi</creatorcontrib><collection>Ceramic Abstracts</collection><collection>Engineered Materials Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><jtitle>Journal of materials science & technology</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Wu, Shunhua</au><au>Wei, Xuesong</au><au>Wang, Xiaoyong</au><au>Yang, Hongxing</au><au>Gao, Shunqi</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Effect of Bi(2)O(3) Additive on the Microstructure and Dielectric Properties of BaTiO(3)-Based Ceramics Sintered at Lower Temperature</atitle><jtitle>Journal of materials science & technology</jtitle><date>2010-05-01</date><risdate>2010</risdate><volume>26</volume><issue>5</issue><spage>472</spage><epage>476</epage><pages>472-476</pages><issn>1005-0302</issn><abstract>High performance X8R dielectric ceramics were prepared by doping BBi(2)O(3) to BaTiCvbased ceramics. The effect of small amounts (<1.2 mol%) of BBi(2)O(3) additive on the microstructure and dielectric properties of BaTi(3)-based ceramics have been investigated. The Bi(2)O(3), acting as a sintering additive, can effectively lower the sintering temperature of BaTiCVbased ceramics from 1300 to 1130 degree C. The bulk density of BaTiO(3) Vbased ceramics increased and reached the maximum value with increasing Bi(2)O(3) content. The dielectric constant increased with increasing Bi(2)O(3) until it reached the maximum value with 0.8 mol% Bi(2)O(3) additive, and the dielectric loss decreased with increasing BBi(2)O(3) content. Optimal dielectric properties of =2470, tan delta =0.011 and Delta epsilon / epsilon (25)< plus or minus 9% (-55-150 degree C) were obtained for the BaTi0(3)-based ceramics doped with 0.8 mol% Bi(2)O(3) sintered at 1130 degree C for 6 h.</abstract></addata></record> |
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| source | Elsevier ScienceDirect Journals Complete; Alma/SFX Local Collection |
| subjects | Additives Ceramics Dielectric properties Dielectrics Doping Microstructure Sintering |
| title | Effect of Bi(2)O(3) Additive on the Microstructure and Dielectric Properties of BaTiO(3)-Based Ceramics Sintered at Lower Temperature |
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