Design and fabrication of a differential capacitive three-axis SOI accelerometer using vertical comb electrodes

A differential capacitive three‐axis silicon‐on‐insulator (SOI) accelerometer using vertical comb electrodes fabricated by using surface‐micromachining technique has been developed. The accelerometer structures consist of only the device layer of a SOI wafer without lower or upper electrodes. The ve...

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Veröffentlicht in:	IEEJ transactions on electrical and electronic engineering 2009-05, Vol.4 (3), p.345-351
Hauptverfasser:	Tsuchiya, Toshiyuki, Hamaguchi, Hiroyuki, Sugano, Koji, Tabata, Osamu
Format:	Artikel
Sprache:	eng
Schlagworte:	Acceleration Accelerometers Capacitance capacitive Devices Electrodes Electronic engineering Planes single crystal silicon SOI three-axis accelerometer vertical comb electrode Wafers
Online-Zugang:	Volltext
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