Electronic properties and microstructure of undoped, and B- or P-doped polysilicon deposited by LPCVD

In this paper, we present some results on the electrical and optical properties of thin layers of polysilicon obtained by LPCVD in a sector reactor [1]. This reactor is representative of annular reactor, in which a large batch can be processed (total area up to 150 m 2). The layers are either undope...

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Veröffentlicht in:	Solar energy materials and solar cells 1997-11, Vol.48 (1), p.303-314
Hauptverfasser:	Laghla, Y., Scheid, E., Vergnes, H., Couderc, J.P.
Format:	Artikel
Sprache:	eng
Schlagworte:	B- or P-doped polysilicon Chemical vapor deposition Crystal microstructure Electronic properties Microstructure Polycrystalline materials
Online-Zugang:	Volltext
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