An optical technique for measuring surface recombination velocity

The surface recombination velocity is a critical parameter in silicon device applications including solar cells. In this work, we developed and applied a contactless optical/radio-frequency technique to provide quick, contactless measurement of the surface recombination velocity. The basic technique...

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Veröffentlicht in:Solar Energy Materials and Solar Cells 2009-05, Vol.93 (5), p.645-649
Hauptverfasser: Ahrenkiel, R.K., Johnston, S.W.
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Johnston, S.W.
description The surface recombination velocity is a critical parameter in silicon device applications including solar cells. In this work, we developed and applied a contactless optical/radio-frequency technique to provide quick, contactless measurement of the surface recombination velocity. The basic technique is to probe the excess carrier lifetime in the surface and bulk regions of a semiconductor wafer by varying the excitation wavelength. Here, we have derived a theoretical functional model that describes the experimental photoconductive transient. A curve fitting procedure provides a determination for both the bulk recombination lifetime and the surface recombination velocity.
doi_str_mv 10.1016/j.solmat.2008.12.028
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subjects Applied sciences
Carrier lifetime
Characterization
Energy
Equipments, installations and applications
Exact sciences and technology
MATERIALS SCIENCE
Natural energy
Photovoltaic conversion
Recombination velocity
Silicon photovoltaics
Solar cells. Photoelectrochemical cells
SOLAR ENERGY
Solar Energy - Photovoltaics
title An optical technique for measuring surface recombination velocity
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