Comparison of secondary ion mass spectroscopy analysis of ultrashallow phosphorus using Cs super(+), O super(+) sub(2), and CsC super(-) sub(6) primary ion beams

Secondary ion mass spectroscopy (SIMS) analysis of ultrashallow phosphorus implanted into silicon, was compared using Cs super(+), O super(+) sub(2), and CsC sub(6) super(-) primary ion beams. Samples were analyzed with and without sample rotation to study the possible influence of beam induced crat...

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Veröffentlicht in:	Journal of vacuum science & technology. B, Microelectronics processing and phenomena Microelectronics processing and phenomena, 2002-01, Vol.20 (2), p.507-511
Hauptverfasser:	Loesing, R, Guryanov, G M, Phillips, MS, Griffis, D P
Format:	Artikel
Sprache:	eng
Schlagworte:	Atomic force microscopy Cesium Ion beams Ion bombardment Ion implantation MOSFET devices Oxygen Phosphorus Secondary ion mass spectrometry Semiconducting silicon
Online-Zugang:	Volltext
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