Comparison of secondary ion mass spectroscopy analysis of ultrashallow phosphorus using Cs super(+), O super(+) sub(2), and CsC super(-) sub(6) primary ion beams
Secondary ion mass spectroscopy (SIMS) analysis of ultrashallow phosphorus implanted into silicon, was compared using Cs super(+), O super(+) sub(2), and CsC sub(6) super(-) primary ion beams. Samples were analyzed with and without sample rotation to study the possible influence of beam induced crat...
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| Veröffentlicht in: | Journal of vacuum science & technology. B, Microelectronics processing and phenomena Microelectronics processing and phenomena, 2002-01, Vol.20 (2), p.507-511 |
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| container_issue | 2 |
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| container_title | Journal of vacuum science & technology. B, Microelectronics processing and phenomena |
| container_volume | 20 |
| creator | Loesing, R Guryanov, G M Phillips, MS Griffis, D P |
| description | Secondary ion mass spectroscopy (SIMS) analysis of ultrashallow phosphorus implanted into silicon, was compared using Cs super(+), O super(+) sub(2), and CsC sub(6) super(-) primary ion beams. Samples were analyzed with and without sample rotation to study the possible influence of beam induced crater bottom roughening on the instantaneous removal rate and hence depth calibration. Results indicated that the use of cesium containing negative cluster ions extracted from sputter negative ion sources, coupled with negative secondary ion extraction, provided a useful method for analyzing shallow n-dopant profiles in magnetic sector SIMS. |
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| fullrecord | <record><control><sourceid>proquest</sourceid><recordid>TN_cdi_proquest_miscellaneous_746168823</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>746168823</sourcerecordid><originalsourceid>FETCH-proquest_miscellaneous_7461688233</originalsourceid><addsrcrecordid>eNqNjc1OwzAQhHMAqeXnHfZGK4gUJyXNPQJx48KBW7VN3dbI9hpPLJTH4U0xonDmMNrRzDfas2JerZtVWSv1OisugLeqUqq7b-bFZy8ucDQQT7In6EH8juNEJgeOAULQwxgFg4SJ2LOdYPDNJjtGxpGtlQ8KR0FWTKAE4w_U52UKOi5ul3f0_Oez2S7qHLHfZaY_FeVP0S4pRON-_281O1wV53u20Nene1ncPD689E9liPKeNMaNMxi0tey1JGzWq1a1XVc3zf_JL9esXbA</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>746168823</pqid></control><display><type>article</type><title>Comparison of secondary ion mass spectroscopy analysis of ultrashallow phosphorus using Cs super(+), O super(+) sub(2), and CsC super(-) sub(6) primary ion beams</title><source>AIP Journals Complete</source><creator>Loesing, R ; Guryanov, G M ; Phillips, MS ; Griffis, D P</creator><creatorcontrib>Loesing, R ; Guryanov, G M ; Phillips, MS ; Griffis, D P</creatorcontrib><description>Secondary ion mass spectroscopy (SIMS) analysis of ultrashallow phosphorus implanted into silicon, was compared using Cs super(+), O super(+) sub(2), and CsC sub(6) super(-) primary ion beams. Samples were analyzed with and without sample rotation to study the possible influence of beam induced crater bottom roughening on the instantaneous removal rate and hence depth calibration. Results indicated that the use of cesium containing negative cluster ions extracted from sputter negative ion sources, coupled with negative secondary ion extraction, provided a useful method for analyzing shallow n-dopant profiles in magnetic sector SIMS.</description><identifier>ISSN: 0734-211X</identifier><language>eng</language><subject>Atomic force microscopy ; Cesium ; Ion beams ; Ion bombardment ; Ion implantation ; MOSFET devices ; Oxygen ; Phosphorus ; Secondary ion mass spectrometry ; Semiconducting silicon</subject><ispartof>Journal of vacuum science & technology. B, Microelectronics processing and phenomena, 2002-01, Vol.20 (2), p.507-511</ispartof><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784</link.rule.ids></links><search><creatorcontrib>Loesing, R</creatorcontrib><creatorcontrib>Guryanov, G M</creatorcontrib><creatorcontrib>Phillips, MS</creatorcontrib><creatorcontrib>Griffis, D P</creatorcontrib><title>Comparison of secondary ion mass spectroscopy analysis of ultrashallow phosphorus using Cs super(+), O super(+) sub(2), and CsC super(-) sub(6) primary ion beams</title><title>Journal of vacuum science & technology. B, Microelectronics processing and phenomena</title><description>Secondary ion mass spectroscopy (SIMS) analysis of ultrashallow phosphorus implanted into silicon, was compared using Cs super(+), O super(+) sub(2), and CsC sub(6) super(-) primary ion beams. Samples were analyzed with and without sample rotation to study the possible influence of beam induced crater bottom roughening on the instantaneous removal rate and hence depth calibration. Results indicated that the use of cesium containing negative cluster ions extracted from sputter negative ion sources, coupled with negative secondary ion extraction, provided a useful method for analyzing shallow n-dopant profiles in magnetic sector SIMS.</description><subject>Atomic force microscopy</subject><subject>Cesium</subject><subject>Ion beams</subject><subject>Ion bombardment</subject><subject>Ion implantation</subject><subject>MOSFET devices</subject><subject>Oxygen</subject><subject>Phosphorus</subject><subject>Secondary ion mass spectrometry</subject><subject>Semiconducting silicon</subject><issn>0734-211X</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2002</creationdate><recordtype>article</recordtype><recordid>eNqNjc1OwzAQhHMAqeXnHfZGK4gUJyXNPQJx48KBW7VN3dbI9hpPLJTH4U0xonDmMNrRzDfas2JerZtVWSv1OisugLeqUqq7b-bFZy8ucDQQT7In6EH8juNEJgeOAULQwxgFg4SJ2LOdYPDNJjtGxpGtlQ8KR0FWTKAE4w_U52UKOi5ul3f0_Oez2S7qHLHfZaY_FeVP0S4pRON-_281O1wV53u20Nene1ncPD689E9liPKeNMaNMxi0tey1JGzWq1a1XVc3zf_JL9esXbA</recordid><startdate>20020101</startdate><enddate>20020101</enddate><creator>Loesing, R</creator><creator>Guryanov, G M</creator><creator>Phillips, MS</creator><creator>Griffis, D P</creator><scope>7TC</scope></search><sort><creationdate>20020101</creationdate><title>Comparison of secondary ion mass spectroscopy analysis of ultrashallow phosphorus using Cs super(+), O super(+) sub(2), and CsC super(-) sub(6) primary ion beams</title><author>Loesing, R ; Guryanov, G M ; Phillips, MS ; Griffis, D P</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-proquest_miscellaneous_7461688233</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2002</creationdate><topic>Atomic force microscopy</topic><topic>Cesium</topic><topic>Ion beams</topic><topic>Ion bombardment</topic><topic>Ion implantation</topic><topic>MOSFET devices</topic><topic>Oxygen</topic><topic>Phosphorus</topic><topic>Secondary ion mass spectrometry</topic><topic>Semiconducting silicon</topic><toplevel>online_resources</toplevel><creatorcontrib>Loesing, R</creatorcontrib><creatorcontrib>Guryanov, G M</creatorcontrib><creatorcontrib>Phillips, MS</creatorcontrib><creatorcontrib>Griffis, D P</creatorcontrib><collection>Mechanical Engineering Abstracts</collection><jtitle>Journal of vacuum science & technology. B, Microelectronics processing and phenomena</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Loesing, R</au><au>Guryanov, G M</au><au>Phillips, MS</au><au>Griffis, D P</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Comparison of secondary ion mass spectroscopy analysis of ultrashallow phosphorus using Cs super(+), O super(+) sub(2), and CsC super(-) sub(6) primary ion beams</atitle><jtitle>Journal of vacuum science & technology. B, Microelectronics processing and phenomena</jtitle><date>2002-01-01</date><risdate>2002</risdate><volume>20</volume><issue>2</issue><spage>507</spage><epage>511</epage><pages>507-511</pages><issn>0734-211X</issn><abstract>Secondary ion mass spectroscopy (SIMS) analysis of ultrashallow phosphorus implanted into silicon, was compared using Cs super(+), O super(+) sub(2), and CsC sub(6) super(-) primary ion beams. Samples were analyzed with and without sample rotation to study the possible influence of beam induced crater bottom roughening on the instantaneous removal rate and hence depth calibration. Results indicated that the use of cesium containing negative cluster ions extracted from sputter negative ion sources, coupled with negative secondary ion extraction, provided a useful method for analyzing shallow n-dopant profiles in magnetic sector SIMS.</abstract></addata></record> |
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| identifier | ISSN: 0734-211X |
| ispartof | Journal of vacuum science & technology. B, Microelectronics processing and phenomena, 2002-01, Vol.20 (2), p.507-511 |
| issn | 0734-211X |
| language | eng |
| recordid | cdi_proquest_miscellaneous_746168823 |
| source | AIP Journals Complete |
| subjects | Atomic force microscopy Cesium Ion beams Ion bombardment Ion implantation MOSFET devices Oxygen Phosphorus Secondary ion mass spectrometry Semiconducting silicon |
| title | Comparison of secondary ion mass spectroscopy analysis of ultrashallow phosphorus using Cs super(+), O super(+) sub(2), and CsC super(-) sub(6) primary ion beams |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-06T06%3A54%3A47IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Comparison%20of%20secondary%20ion%20mass%20spectroscopy%20analysis%20of%20ultrashallow%20phosphorus%20using%20Cs%20super(+),%20O%20super(+)%20sub(2),%20and%20CsC%20super(-)%20sub(6)%20primary%20ion%20beams&rft.jtitle=Journal%20of%20vacuum%20science%20&%20technology.%20B,%20Microelectronics%20processing%20and%20phenomena&rft.au=Loesing,%20R&rft.date=2002-01-01&rft.volume=20&rft.issue=2&rft.spage=507&rft.epage=511&rft.pages=507-511&rft.issn=0734-211X&rft_id=info:doi/&rft_dat=%3Cproquest%3E746168823%3C/proquest%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=746168823&rft_id=info:pmid/&rfr_iscdi=true |