Quantitative determination of the oxygen partial pressure effect on the perpendicular magnetization of TbFeCo thin films

The oxygen partial pressure during the sputter process of TbFeCo thin films was controlled precisely. The effect of the oxygen partial pressure on the perpendicular magnetization of TbFeCo films was quantitatively studied. Between 5.4 × 10 −6 mbar and 1.29 × 10 −5 mbar oxygen partial pressure, the f...

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Veröffentlicht in:	Thin solid films 1995-10, Vol.266 (2), p.282-284
Hauptverfasser:	Chao, Shiuh, Wang, Bin-Yaw, Wu, Kon-Li, Huang, Der-Ray
Format:	Artikel
Sprache:	eng
Schlagworte:	Magnetization Magnetron sputtering Oxygen Paramagnetism Partial pressure Pressure control Pressure effects Sputter deposition Terbium compounds
Online-Zugang:	Volltext
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