Enhanced light-absorption and photo-sensitivity in amorphous silicon germanium/amorphous silicon multilayer

We investigated the characteristics of the amorphous silicon germanium/amorphous silicon (a-SiGe:H/a-Si:H) multilayers processed through alternate germanium incorporation by adding GeH 4 at a fixed periodicity to a constant gas glow of SiH 4 in a PECVD deposition process. We found an enhanced optica...

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Veröffentlicht in:	Solar energy materials and solar cells 2002-10, Vol.74 (1), p.357-363
Hauptverfasser:	Jun, Kyung Hoon, Rath, Jatindra K., Schropp, Ruud E.I.
Format:	Artikel
Sprache:	eng
Schlagworte:	Amorphous silicon Crystal defects Light absorption Multilayer PECVD Photoconductivity Photosensitivity Plasma enhanced chemical vapor deposition Semiconducting silicon compounds Silanes Silicon germanium
Online-Zugang:	Volltext
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