In situ chamber cleaning using atomic H in catalytic-CVD apparatus for mass production of a-Si:H solar cells

Effects of the chamber cleaning on properties of hydrogenated amorphous Si films prepared by catalytic chemical vapor deposition are shown. It is also revealed that the chamber is easily cleaned by atomic H generated on the heated catalyzer from H 2 gas molecules. In situ chamber cleaning using only...

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Veröffentlicht in:	Solar energy materials and solar cells 2002-10, Vol.74 (1), p.373-377
Hauptverfasser:	Masuda, Atsushi, Ishibashi, Yoriko, Uchida, Kenji, Kamesaki, Koji, Izumi, Akira, Matsumura, Hideki
Format:	Artikel
Sprache:	eng
Schlagworte:	Amorphous films Amorphous silicon Atomic hydrogen Catalytic chemical vapor deposition Chamber cleaning Chemical vapor deposition Hot-wire chemical vapor deposition Hydrogen Hydrogenated amorphous silicon Hydrogenation Mass-production apparatus Solar cells
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