In situ chamber cleaning using atomic H in catalytic-CVD apparatus for mass production of a-Si:H solar cells
Effects of the chamber cleaning on properties of hydrogenated amorphous Si films prepared by catalytic chemical vapor deposition are shown. It is also revealed that the chamber is easily cleaned by atomic H generated on the heated catalyzer from H 2 gas molecules. In situ chamber cleaning using only...
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| Veröffentlicht in: | Solar energy materials and solar cells 2002-10, Vol.74 (1), p.373-377 |
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| container_title | Solar energy materials and solar cells |
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| creator | Masuda, Atsushi Ishibashi, Yoriko Uchida, Kenji Kamesaki, Koji Izumi, Akira Matsumura, Hideki |
| description | Effects of the chamber cleaning on properties of hydrogenated amorphous Si films prepared by catalytic chemical vapor deposition are shown. It is also revealed that the chamber is easily cleaned by atomic H generated on the heated catalyzer from H
2 gas molecules. In situ chamber cleaning using only H
2 gas is applicable to in-line apparatuses for mass production of solar cells, which brings about the reduction of the production cost. |
| doi_str_mv | 10.1016/S0927-0248(02)00130-7 |
| format | Article |
| fullrecord | <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_proquest_miscellaneous_746018044</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><els_id>S0927024802001307</els_id><sourcerecordid>27583149</sourcerecordid><originalsourceid>FETCH-LOGICAL-c436t-6f7b5de8950b46e05727fe0fe6d9b867596304a222ffce38489e3c975c89c8e83</originalsourceid><addsrcrecordid>eNqFkUtPHDEQhC2USGxIfkIkn0I4TOixPX5widDmsUhIHCC5Wl5PGxzNjDe2B4l_n1k2yjFcui9flaq7CHnfwqcWWnl-C4apBpjQH4GdAbQcGnVEVq1WpuHc6Fdk9Q85Jm9K-QUATHKxIsPVREusM_UPbtxipn5AN8Xpns5lP11NY_R0Q-NEvatueKrRN-ufX6jb7Vx2dS40pExHVwrd5dTPvsY00RSoa27jxYaWNLjFFoehvCWvgxsKvvu7T8iPb1_v1pvm-ub71fryuvGCy9rIoLZdj9p0sBUSoVNMBYSAsjdbLVVnJAfhGGMheORaaIPcG9V5bbxGzU_I6cF3CfR7xlLtGMs-gZswzcUqIaHVIMRCfvgvyVSneSvMAnYH0OdUSsZgdzmOLj_ZFuy-Bfvcgt2_eBn2uQWrFt3ngw6Xex8jZlt8xMljHzP6avsUX3D4A6YTjkk</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>27583149</pqid></control><display><type>article</type><title>In situ chamber cleaning using atomic H in catalytic-CVD apparatus for mass production of a-Si:H solar cells</title><source>Elsevier ScienceDirect Journals</source><creator>Masuda, Atsushi ; Ishibashi, Yoriko ; Uchida, Kenji ; Kamesaki, Koji ; Izumi, Akira ; Matsumura, Hideki</creator><creatorcontrib>Masuda, Atsushi ; Ishibashi, Yoriko ; Uchida, Kenji ; Kamesaki, Koji ; Izumi, Akira ; Matsumura, Hideki</creatorcontrib><description>Effects of the chamber cleaning on properties of hydrogenated amorphous Si films prepared by catalytic chemical vapor deposition are shown. It is also revealed that the chamber is easily cleaned by atomic H generated on the heated catalyzer from H
2 gas molecules. In situ chamber cleaning using only H
2 gas is applicable to in-line apparatuses for mass production of solar cells, which brings about the reduction of the production cost.</description><identifier>ISSN: 0927-0248</identifier><identifier>EISSN: 1879-3398</identifier><identifier>DOI: 10.1016/S0927-0248(02)00130-7</identifier><language>eng</language><publisher>Elsevier B.V</publisher><subject>Amorphous films ; Amorphous silicon ; Atomic hydrogen ; Catalytic chemical vapor deposition ; Chamber cleaning ; Chemical vapor deposition ; Hot-wire chemical vapor deposition ; Hydrogen ; Hydrogenated amorphous silicon ; Hydrogenation ; Mass-production apparatus ; Solar cells</subject><ispartof>Solar energy materials and solar cells, 2002-10, Vol.74 (1), p.373-377</ispartof><rights>2002 Elsevier Science B.V.</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c436t-6f7b5de8950b46e05727fe0fe6d9b867596304a222ffce38489e3c975c89c8e83</citedby><cites>FETCH-LOGICAL-c436t-6f7b5de8950b46e05727fe0fe6d9b867596304a222ffce38489e3c975c89c8e83</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://dx.doi.org/10.1016/S0927-0248(02)00130-7$$EHTML$$P50$$Gelsevier$$H</linktohtml><link.rule.ids>314,777,781,3537,27905,27906,45976</link.rule.ids></links><search><creatorcontrib>Masuda, Atsushi</creatorcontrib><creatorcontrib>Ishibashi, Yoriko</creatorcontrib><creatorcontrib>Uchida, Kenji</creatorcontrib><creatorcontrib>Kamesaki, Koji</creatorcontrib><creatorcontrib>Izumi, Akira</creatorcontrib><creatorcontrib>Matsumura, Hideki</creatorcontrib><title>In situ chamber cleaning using atomic H in catalytic-CVD apparatus for mass production of a-Si:H solar cells</title><title>Solar energy materials and solar cells</title><description>Effects of the chamber cleaning on properties of hydrogenated amorphous Si films prepared by catalytic chemical vapor deposition are shown. It is also revealed that the chamber is easily cleaned by atomic H generated on the heated catalyzer from H
2 gas molecules. In situ chamber cleaning using only H
2 gas is applicable to in-line apparatuses for mass production of solar cells, which brings about the reduction of the production cost.</description><subject>Amorphous films</subject><subject>Amorphous silicon</subject><subject>Atomic hydrogen</subject><subject>Catalytic chemical vapor deposition</subject><subject>Chamber cleaning</subject><subject>Chemical vapor deposition</subject><subject>Hot-wire chemical vapor deposition</subject><subject>Hydrogen</subject><subject>Hydrogenated amorphous silicon</subject><subject>Hydrogenation</subject><subject>Mass-production apparatus</subject><subject>Solar cells</subject><issn>0927-0248</issn><issn>1879-3398</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2002</creationdate><recordtype>article</recordtype><recordid>eNqFkUtPHDEQhC2USGxIfkIkn0I4TOixPX5widDmsUhIHCC5Wl5PGxzNjDe2B4l_n1k2yjFcui9flaq7CHnfwqcWWnl-C4apBpjQH4GdAbQcGnVEVq1WpuHc6Fdk9Q85Jm9K-QUATHKxIsPVREusM_UPbtxipn5AN8Xpns5lP11NY_R0Q-NEvatueKrRN-ufX6jb7Vx2dS40pExHVwrd5dTPvsY00RSoa27jxYaWNLjFFoehvCWvgxsKvvu7T8iPb1_v1pvm-ub71fryuvGCy9rIoLZdj9p0sBUSoVNMBYSAsjdbLVVnJAfhGGMheORaaIPcG9V5bbxGzU_I6cF3CfR7xlLtGMs-gZswzcUqIaHVIMRCfvgvyVSneSvMAnYH0OdUSsZgdzmOLj_ZFuy-Bfvcgt2_eBn2uQWrFt3ngw6Xex8jZlt8xMljHzP6avsUX3D4A6YTjkk</recordid><startdate>20021001</startdate><enddate>20021001</enddate><creator>Masuda, Atsushi</creator><creator>Ishibashi, Yoriko</creator><creator>Uchida, Kenji</creator><creator>Kamesaki, Koji</creator><creator>Izumi, Akira</creator><creator>Matsumura, Hideki</creator><general>Elsevier B.V</general><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>8FD</scope><scope>L7M</scope><scope>7TC</scope></search><sort><creationdate>20021001</creationdate><title>In situ chamber cleaning using atomic H in catalytic-CVD apparatus for mass production of a-Si:H solar cells</title><author>Masuda, Atsushi ; Ishibashi, Yoriko ; Uchida, Kenji ; Kamesaki, Koji ; Izumi, Akira ; Matsumura, Hideki</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c436t-6f7b5de8950b46e05727fe0fe6d9b867596304a222ffce38489e3c975c89c8e83</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2002</creationdate><topic>Amorphous films</topic><topic>Amorphous silicon</topic><topic>Atomic hydrogen</topic><topic>Catalytic chemical vapor deposition</topic><topic>Chamber cleaning</topic><topic>Chemical vapor deposition</topic><topic>Hot-wire chemical vapor deposition</topic><topic>Hydrogen</topic><topic>Hydrogenated amorphous silicon</topic><topic>Hydrogenation</topic><topic>Mass-production apparatus</topic><topic>Solar cells</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Masuda, Atsushi</creatorcontrib><creatorcontrib>Ishibashi, Yoriko</creatorcontrib><creatorcontrib>Uchida, Kenji</creatorcontrib><creatorcontrib>Kamesaki, Koji</creatorcontrib><creatorcontrib>Izumi, Akira</creatorcontrib><creatorcontrib>Matsumura, Hideki</creatorcontrib><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>Mechanical Engineering Abstracts</collection><jtitle>Solar energy materials and solar cells</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Masuda, Atsushi</au><au>Ishibashi, Yoriko</au><au>Uchida, Kenji</au><au>Kamesaki, Koji</au><au>Izumi, Akira</au><au>Matsumura, Hideki</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>In situ chamber cleaning using atomic H in catalytic-CVD apparatus for mass production of a-Si:H solar cells</atitle><jtitle>Solar energy materials and solar cells</jtitle><date>2002-10-01</date><risdate>2002</risdate><volume>74</volume><issue>1</issue><spage>373</spage><epage>377</epage><pages>373-377</pages><issn>0927-0248</issn><eissn>1879-3398</eissn><abstract>Effects of the chamber cleaning on properties of hydrogenated amorphous Si films prepared by catalytic chemical vapor deposition are shown. It is also revealed that the chamber is easily cleaned by atomic H generated on the heated catalyzer from H
2 gas molecules. In situ chamber cleaning using only H
2 gas is applicable to in-line apparatuses for mass production of solar cells, which brings about the reduction of the production cost.</abstract><pub>Elsevier B.V</pub><doi>10.1016/S0927-0248(02)00130-7</doi><tpages>5</tpages></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 0927-0248 |
| ispartof | Solar energy materials and solar cells, 2002-10, Vol.74 (1), p.373-377 |
| issn | 0927-0248 1879-3398 |
| language | eng |
| recordid | cdi_proquest_miscellaneous_746018044 |
| source | Elsevier ScienceDirect Journals |
| subjects | Amorphous films Amorphous silicon Atomic hydrogen Catalytic chemical vapor deposition Chamber cleaning Chemical vapor deposition Hot-wire chemical vapor deposition Hydrogen Hydrogenated amorphous silicon Hydrogenation Mass-production apparatus Solar cells |
| title | In situ chamber cleaning using atomic H in catalytic-CVD apparatus for mass production of a-Si:H solar cells |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-17T12%3A18%3A50IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=In%20situ%20chamber%20cleaning%20using%20atomic%20H%20in%20catalytic-CVD%20apparatus%20for%20mass%20production%20of%20a-Si:H%20solar%20cells&rft.jtitle=Solar%20energy%20materials%20and%20solar%20cells&rft.au=Masuda,%20Atsushi&rft.date=2002-10-01&rft.volume=74&rft.issue=1&rft.spage=373&rft.epage=377&rft.pages=373-377&rft.issn=0927-0248&rft.eissn=1879-3398&rft_id=info:doi/10.1016/S0927-0248(02)00130-7&rft_dat=%3Cproquest_cross%3E27583149%3C/proquest_cross%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=27583149&rft_id=info:pmid/&rft_els_id=S0927024802001307&rfr_iscdi=true |