Passivation and gettering of defective crystalline silicon solar cell

Different polycrystalline silicon and single-crystalline silicon with dislocations were used for passivation and gettering processes. These materials have defects and more impurity in the crystal. The dominant increase of electronic performance was found for wafers with more defects by using a diffe...

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Veröffentlicht in:	Solar energy materials and solar cells 2000-01, Vol.62 (1), p.149-155
Hauptverfasser:	Lin, Anzhong, Wong, Xuejian, Li, Youxin, Chou, Liande
Format:	Artikel
Sprache:	eng
Schlagworte:	Crystal impurities Dislocation Dislocations (crystals) Impurity gettering Passivation Polycrystalline materials Silicon wafers Single crystals
Online-Zugang:	Volltext
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