Passivation and gettering of defective crystalline silicon solar cell
Different polycrystalline silicon and single-crystalline silicon with dislocations were used for passivation and gettering processes. These materials have defects and more impurity in the crystal. The dominant increase of electronic performance was found for wafers with more defects by using a diffe...
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| Veröffentlicht in: | Solar energy materials and solar cells 2000-01, Vol.62 (1), p.149-155 |
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| container_issue | 1 |
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| container_title | Solar energy materials and solar cells |
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| creator | Lin, Anzhong Wong, Xuejian Li, Youxin Chou, Liande |
| description | Different polycrystalline silicon and single-crystalline silicon with dislocations were used for passivation and gettering processes. These materials have defects and more impurity in the crystal. The dominant increase of electronic performance was found for wafers with more defects by using a different casting method. The wafers of single crystalline silicon with dislocations also have higher increase of efficiency of cell in comparison with that wafer without dislocations during oxide passivation processes used. POCl
3 was used for gettering processes. Single-crystal wafer with or without dislocations was used for comparison of gettering. |
| doi_str_mv | 10.1016/S0927-0248(99)00146-4 |
| format | Article |
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| ispartof | Solar energy materials and solar cells, 2000-01, Vol.62 (1), p.149-155 |
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| language | eng |
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| source | Elsevier ScienceDirect Journals |
| subjects | Crystal impurities Dislocation Dislocations (crystals) Impurity gettering Passivation Polycrystalline materials Silicon wafers Single crystals |
| title | Passivation and gettering of defective crystalline silicon solar cell |
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