Preparation of highly conductive p-type μc-Si:H window layer using lower concentration of hydrogen in the rf glow discharge plasma
Boron doped p-type hydrogenated microcrystalline silicon (μc-Si:H) films have been prepared by radio-frequency glow discharge method. Highly conductive p-type μc-Si:H films can be obtained even with lower concentration of hydrogen in the rf glow discharge plasma if chamber pressure is low. Effects o...
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| Veröffentlicht in: | Solar energy materials and solar cells 1997-01, Vol.45 (4), p.413-421 |
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| container_title | Solar energy materials and solar cells |
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| creator | Sali, Jaydeep V. Panaskar, Varsha D. Takwale, M.G. Marathe, B.R. Bhide, V.G. |
| description | Boron doped p-type hydrogenated microcrystalline silicon (μc-Si:H) films have been prepared by radio-frequency glow discharge method. Highly conductive p-type μc-Si:H films can be obtained even with lower concentration of hydrogen in the rf glow discharge plasma if chamber pressure is low. Effects of increase in hydrogen (H
2) flow rate and chamber pressure have been studied. The structural properties of the films have been studied by X-ray diffractometry. The electrical and optical characterization have been done by dark conductivity, Hall measurements and optical absorption measurements respectively. Film with conductivity 0.1(Ω-cm)
−1 with band gap 2.1 eV has been obtained. |
| doi_str_mv | 10.1016/S0927-0248(96)00088-8 |
| format | Article |
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2) flow rate and chamber pressure have been studied. The structural properties of the films have been studied by X-ray diffractometry. The electrical and optical characterization have been done by dark conductivity, Hall measurements and optical absorption measurements respectively. Film with conductivity 0.1(Ω-cm)
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2) flow rate and chamber pressure have been studied. The structural properties of the films have been studied by X-ray diffractometry. The electrical and optical characterization have been done by dark conductivity, Hall measurements and optical absorption measurements respectively. Film with conductivity 0.1(Ω-cm)
−1 with band gap 2.1 eV has been obtained.</description><subject>Applied sciences</subject><subject>Conductivity</subject><subject>Crystalline materials</subject><subject>Doping (additives)</subject><subject>Electric conductivity of solids</subject><subject>Energy</subject><subject>Energy gap</subject><subject>Exact sciences and technology</subject><subject>Glow discharges</subject><subject>Hall effect</subject><subject>Hydrogenated microcrystalline silicon films</subject><subject>Hydrogenation</subject><subject>Light absorption</subject><subject>Natural energy</subject><subject>Photovoltaic conversion</subject><subject>Pressure effects</subject><subject>Radio-frequency glow discharge</subject><subject>Semiconducting silicon</subject><subject>Solar cells. Photoelectrochemical cells</subject><subject>Solar energy</subject><subject>X ray crystallography</subject><issn>0927-0248</issn><issn>1879-3398</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1997</creationdate><recordtype>article</recordtype><recordid>eNqFkc9qFTEUxoMoeK0-gpCFaF2M5u8kcSNSbCsUKlTXISZn5kbmTsZkbi-z9rX6DH0mc3tLcaWrEzi_7zvh-xB6Sck7Smj7_ooYphrChD427VtCiNaNfoRWVCvTcG70Y7R6QJ6iZ6X8rBBruVih318zTC67OaYRpw6vY78eFuzTGLZ-jteAp2ZeJsC3N765ih_O8S6OIe3w4BbIeFvi2OMh7eq7ajyM819eS8iphxHHEc9rwLnDfUVxiMWvXe6r9-DKxj1HTzo3FHhxP4_Q99PP307Om4vLsy8nny4az42ZG0WoMIFxrzRwCd5RY0C2xgTK5H7Dgu5-GCqp1FqIwD0YyWXrhCCsc4YfoTcH3ymnX1sos93Un8AwuBHStlglpBKKM1HJ1_8kmeJEt0pWUB5An1MpGTo75bhxebGU2H059q4cu0_emtbelWN11b26P-CKd0OX3ehjeRAzSoU2pGIfDxjUWK4jZFt8hBpziBn8bEOK_zn0BwDFpOg</recordid><startdate>19970101</startdate><enddate>19970101</enddate><creator>Sali, Jaydeep V.</creator><creator>Panaskar, Varsha D.</creator><creator>Takwale, M.G.</creator><creator>Marathe, B.R.</creator><creator>Bhide, V.G.</creator><general>Elsevier B.V</general><general>Elsevier</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>8FD</scope><scope>L7M</scope><scope>7TC</scope></search><sort><creationdate>19970101</creationdate><title>Preparation of highly conductive p-type μc-Si:H window layer using lower concentration of hydrogen in the rf glow discharge plasma</title><author>Sali, Jaydeep V. ; Panaskar, Varsha D. ; Takwale, M.G. ; Marathe, B.R. ; Bhide, V.G.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c399t-70149d23c78e35eca199e5699d12549d22d8fb915158844d3ce95356a4402fa93</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1997</creationdate><topic>Applied sciences</topic><topic>Conductivity</topic><topic>Crystalline materials</topic><topic>Doping (additives)</topic><topic>Electric conductivity of solids</topic><topic>Energy</topic><topic>Energy gap</topic><topic>Exact sciences and technology</topic><topic>Glow discharges</topic><topic>Hall effect</topic><topic>Hydrogenated microcrystalline silicon films</topic><topic>Hydrogenation</topic><topic>Light absorption</topic><topic>Natural energy</topic><topic>Photovoltaic conversion</topic><topic>Pressure effects</topic><topic>Radio-frequency glow discharge</topic><topic>Semiconducting silicon</topic><topic>Solar cells. Photoelectrochemical cells</topic><topic>Solar energy</topic><topic>X ray crystallography</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Sali, Jaydeep V.</creatorcontrib><creatorcontrib>Panaskar, Varsha D.</creatorcontrib><creatorcontrib>Takwale, M.G.</creatorcontrib><creatorcontrib>Marathe, B.R.</creatorcontrib><creatorcontrib>Bhide, V.G.</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>Mechanical Engineering Abstracts</collection><jtitle>Solar energy materials and solar cells</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Sali, Jaydeep V.</au><au>Panaskar, Varsha D.</au><au>Takwale, M.G.</au><au>Marathe, B.R.</au><au>Bhide, V.G.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Preparation of highly conductive p-type μc-Si:H window layer using lower concentration of hydrogen in the rf glow discharge plasma</atitle><jtitle>Solar energy materials and solar cells</jtitle><date>1997-01-01</date><risdate>1997</risdate><volume>45</volume><issue>4</issue><spage>413</spage><epage>421</epage><pages>413-421</pages><issn>0927-0248</issn><eissn>1879-3398</eissn><abstract>Boron doped p-type hydrogenated microcrystalline silicon (μc-Si:H) films have been prepared by radio-frequency glow discharge method. Highly conductive p-type μc-Si:H films can be obtained even with lower concentration of hydrogen in the rf glow discharge plasma if chamber pressure is low. Effects of increase in hydrogen (H
2) flow rate and chamber pressure have been studied. The structural properties of the films have been studied by X-ray diffractometry. The electrical and optical characterization have been done by dark conductivity, Hall measurements and optical absorption measurements respectively. Film with conductivity 0.1(Ω-cm)
−1 with band gap 2.1 eV has been obtained.</abstract><cop>Amsterdam</cop><pub>Elsevier B.V</pub><doi>10.1016/S0927-0248(96)00088-8</doi><tpages>9</tpages></addata></record> |
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| ispartof | Solar energy materials and solar cells, 1997-01, Vol.45 (4), p.413-421 |
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| source | Elsevier ScienceDirect Journals |
| subjects | Applied sciences Conductivity Crystalline materials Doping (additives) Electric conductivity of solids Energy Energy gap Exact sciences and technology Glow discharges Hall effect Hydrogenated microcrystalline silicon films Hydrogenation Light absorption Natural energy Photovoltaic conversion Pressure effects Radio-frequency glow discharge Semiconducting silicon Solar cells. Photoelectrochemical cells Solar energy X ray crystallography |
| title | Preparation of highly conductive p-type μc-Si:H window layer using lower concentration of hydrogen in the rf glow discharge plasma |
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