Room temperature magnetism in GaMnP produced by both ion implantation and molecular-beam epitaxy

The magnetization of the dilute magnetic alloy GaMnP:C prepared by the implantation of Mn into p- GaP:C or by direct molecular-beam epitaxy is reported. The material implanted to produce a Mn level of 3% produces ferromagnetic behavior that persists up to a temperature of 330 K, while the epitaxiall...

Ausführliche Beschreibung

Bibliographische Detailangaben

Veröffentlicht in:	Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 2002-05, Vol.20 (3), p.969-973
Hauptverfasser:	Overberg, M. E., Gila, B. P., Thaler, G. T., Abernathy, C. R., Pearton, S. J., Theodoropoulou, N. A., McCarthy, K. T., Arnason, S. B., Hebard, A. F., Chu, S. N. G., Wilson, R. G., Zavada, J. M., Park, Y. D.
Format:	Artikel
Sprache:	eng
Schlagworte:	Doping (additives) Energy gap Ferromagnetism Film growth Ion implantation Lattice constants Magnetic anisotropy Manganese Molecular beam epitaxy Phase composition
Online-Zugang:	Volltext
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!