Influence of resist components on image blur in a patterned positive-tone chemically amplified photoresist

Post-exposure bake-induced blurring of the latent image in a chemically amplified photoresist may limit the extendibility of this resist technology to printing of nanoscale features. It had been proposed that blurring is caused by thermally assisted diffusion of photogenerated acid, however our expe...

Ausführliche Beschreibung

Bibliographische Detailangaben

Veröffentlicht in:	Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 2002-05, Vol.20 (3), p.924-931
Hauptverfasser:	Houle, F. A., Hinsberg, W. D., Sanchez, M. I., Hoffnagle, J. A.
Format:	Artikel
Sprache:	eng
Schlagworte:	Computer simulation Diffraction gratings Infrared spectroscopy Interferometry Kinetic theory Lithography Photoresists Thermal diffusion
Online-Zugang:	Volltext
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!