A novel linearly tunable MEMS variable capacitor

The linearly tunable microelectromechanical systems (MEMS) capacitor with 608 comb fingers changing the overlap area is developed. Unlike the conventional micromachined capacitor using the gap between the parallel plates, the proposed capacitor adopts the overlap area as the tuning parameter. In add...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:Journal of micromechanics and microengineering 2002-01, Vol.12 (1), p.82-86
Hauptverfasser: Seok, Seonho, Choi, Wonseo, Chun, Kukjin
Format: Artikel
Sprache:eng
Schlagworte:
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
container_end_page 86
container_issue 1
container_start_page 82
container_title Journal of micromechanics and microengineering
container_volume 12
creator Seok, Seonho
Choi, Wonseo
Chun, Kukjin
description The linearly tunable microelectromechanical systems (MEMS) capacitor with 608 comb fingers changing the overlap area is developed. Unlike the conventional micromachined capacitor using the gap between the parallel plates, the proposed capacitor adopts the overlap area as the tuning parameter. In addition, the tuning range of the proposed capacitor has large nominal capacitance C sub 0 , whereas the parallel plates have a range of C sub 0 /3 theoretically. The 6-mum-thick single-crystal silicon MEMS structure is bonded to the pyrex glass substrate using the glass-silicon anodic bonding technique and the chemical mechanical polish (CMP) to make the desired capacitor. Single-crystal silicon was chosen as a capacitor structure material because it has excellent mechanical properties greater than those of polysilicon and aluminium as the structure material, and the pyrex glass is used as a substrate instead of silicon to reduce the RF losses through the substrate over the high-frequency range. The measured capacitor shows a nominal capacitance of 1.4 pF, and 10% tuning range at 8V. The capacitor model is also developed to explain the parasitic effect over the high-frequency range and proved by using the Serenade software of the Ansoft Corporation.
doi_str_mv 10.1088/0960-1317/12/1/313
format Article
fullrecord <record><control><sourceid>proquest_pasca</sourceid><recordid>TN_cdi_proquest_miscellaneous_745649134</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>27630095</sourcerecordid><originalsourceid>FETCH-LOGICAL-c410t-d3a9b29d356a1fcf4a4f3dcedc15f6a670acecc031476ef1967deec3172029b93</originalsourceid><addsrcrecordid>eNqN0M9LwzAUB_AgCs7pP-CpFxUPtXlNmjbHMeYP2PCgnsNbmkAla2vSDfbfr3VDDwPx9HjweV8eX0KugT4ALYqESkFjYJAnkCaQMGAnZARMQCw4k6dk9APOyUUIn5QCFFCMCJ1EdbMxLnJVbdC7bdSta1w6Ey1mi7dog7763jS2qKuu8ZfkzKIL5uowx-TjcfY-fY7nr08v08k81hxoF5cM5TKVJcsEgtWWI7es1KbUkFmBIqeojdaUAc-FsSBFXhqj-wdTmsqlZGNyt89tffO1NqFTqypo4xzWplkHlfNMcAmM9_L2T5nmglEqsx6me6h9E4I3VrW-WqHfKqBqqFENLamhJQWpAtXX2B_dHNIxaHTWY62r8HvJmMx4Prh476qm_V_u_bE_dqotLdsBrqyLIA</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>27630095</pqid></control><display><type>article</type><title>A novel linearly tunable MEMS variable capacitor</title><source>Institute of Physics Journals</source><creator>Seok, Seonho ; Choi, Wonseo ; Chun, Kukjin</creator><creatorcontrib>Seok, Seonho ; Choi, Wonseo ; Chun, Kukjin</creatorcontrib><description>The linearly tunable microelectromechanical systems (MEMS) capacitor with 608 comb fingers changing the overlap area is developed. Unlike the conventional micromachined capacitor using the gap between the parallel plates, the proposed capacitor adopts the overlap area as the tuning parameter. In addition, the tuning range of the proposed capacitor has large nominal capacitance C sub 0 , whereas the parallel plates have a range of C sub 0 /3 theoretically. The 6-mum-thick single-crystal silicon MEMS structure is bonded to the pyrex glass substrate using the glass-silicon anodic bonding technique and the chemical mechanical polish (CMP) to make the desired capacitor. Single-crystal silicon was chosen as a capacitor structure material because it has excellent mechanical properties greater than those of polysilicon and aluminium as the structure material, and the pyrex glass is used as a substrate instead of silicon to reduce the RF losses through the substrate over the high-frequency range. The measured capacitor shows a nominal capacitance of 1.4 pF, and 10% tuning range at 8V. The capacitor model is also developed to explain the parasitic effect over the high-frequency range and proved by using the Serenade software of the Ansoft Corporation.</description><identifier>ISSN: 0960-1317</identifier><identifier>EISSN: 1361-6439</identifier><identifier>DOI: 10.1088/0960-1317/12/1/313</identifier><language>eng</language><publisher>Bristol: IOP Publishing</publisher><subject>Applied sciences ; Bonding ; Capacitance ; Chemical mechanical polishing ; Electronics ; Exact sciences and technology ; Glass ; Microelectromechanical devices ; Microelectronic fabrication (materials and surfaces technology) ; Polysilicon ; Semiconducting silicon ; Semiconductor device structures ; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices ; Single crystals ; Substrates</subject><ispartof>Journal of micromechanics and microengineering, 2002-01, Vol.12 (1), p.82-86</ispartof><rights>2002 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c410t-d3a9b29d356a1fcf4a4f3dcedc15f6a670acecc031476ef1967deec3172029b93</citedby><cites>FETCH-LOGICAL-c410t-d3a9b29d356a1fcf4a4f3dcedc15f6a670acecc031476ef1967deec3172029b93</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://iopscience.iop.org/article/10.1088/0960-1317/12/1/313/pdf$$EPDF$$P50$$Giop$$H</linktopdf><link.rule.ids>314,780,784,4024,27923,27924,27925,53830,53910</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&amp;idt=13395473$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Seok, Seonho</creatorcontrib><creatorcontrib>Choi, Wonseo</creatorcontrib><creatorcontrib>Chun, Kukjin</creatorcontrib><title>A novel linearly tunable MEMS variable capacitor</title><title>Journal of micromechanics and microengineering</title><description>The linearly tunable microelectromechanical systems (MEMS) capacitor with 608 comb fingers changing the overlap area is developed. Unlike the conventional micromachined capacitor using the gap between the parallel plates, the proposed capacitor adopts the overlap area as the tuning parameter. In addition, the tuning range of the proposed capacitor has large nominal capacitance C sub 0 , whereas the parallel plates have a range of C sub 0 /3 theoretically. The 6-mum-thick single-crystal silicon MEMS structure is bonded to the pyrex glass substrate using the glass-silicon anodic bonding technique and the chemical mechanical polish (CMP) to make the desired capacitor. Single-crystal silicon was chosen as a capacitor structure material because it has excellent mechanical properties greater than those of polysilicon and aluminium as the structure material, and the pyrex glass is used as a substrate instead of silicon to reduce the RF losses through the substrate over the high-frequency range. The measured capacitor shows a nominal capacitance of 1.4 pF, and 10% tuning range at 8V. The capacitor model is also developed to explain the parasitic effect over the high-frequency range and proved by using the Serenade software of the Ansoft Corporation.</description><subject>Applied sciences</subject><subject>Bonding</subject><subject>Capacitance</subject><subject>Chemical mechanical polishing</subject><subject>Electronics</subject><subject>Exact sciences and technology</subject><subject>Glass</subject><subject>Microelectromechanical devices</subject><subject>Microelectronic fabrication (materials and surfaces technology)</subject><subject>Polysilicon</subject><subject>Semiconducting silicon</subject><subject>Semiconductor device structures</subject><subject>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</subject><subject>Single crystals</subject><subject>Substrates</subject><issn>0960-1317</issn><issn>1361-6439</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2002</creationdate><recordtype>article</recordtype><recordid>eNqN0M9LwzAUB_AgCs7pP-CpFxUPtXlNmjbHMeYP2PCgnsNbmkAla2vSDfbfr3VDDwPx9HjweV8eX0KugT4ALYqESkFjYJAnkCaQMGAnZARMQCw4k6dk9APOyUUIn5QCFFCMCJ1EdbMxLnJVbdC7bdSta1w6Ey1mi7dog7763jS2qKuu8ZfkzKIL5uowx-TjcfY-fY7nr08v08k81hxoF5cM5TKVJcsEgtWWI7es1KbUkFmBIqeojdaUAc-FsSBFXhqj-wdTmsqlZGNyt89tffO1NqFTqypo4xzWplkHlfNMcAmM9_L2T5nmglEqsx6me6h9E4I3VrW-WqHfKqBqqFENLamhJQWpAtXX2B_dHNIxaHTWY62r8HvJmMx4Prh476qm_V_u_bE_dqotLdsBrqyLIA</recordid><startdate>20020101</startdate><enddate>20020101</enddate><creator>Seok, Seonho</creator><creator>Choi, Wonseo</creator><creator>Chun, Kukjin</creator><general>IOP Publishing</general><general>Institute of Physics</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7TB</scope><scope>8FD</scope><scope>FR3</scope><scope>7TC</scope></search><sort><creationdate>20020101</creationdate><title>A novel linearly tunable MEMS variable capacitor</title><author>Seok, Seonho ; Choi, Wonseo ; Chun, Kukjin</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c410t-d3a9b29d356a1fcf4a4f3dcedc15f6a670acecc031476ef1967deec3172029b93</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2002</creationdate><topic>Applied sciences</topic><topic>Bonding</topic><topic>Capacitance</topic><topic>Chemical mechanical polishing</topic><topic>Electronics</topic><topic>Exact sciences and technology</topic><topic>Glass</topic><topic>Microelectromechanical devices</topic><topic>Microelectronic fabrication (materials and surfaces technology)</topic><topic>Polysilicon</topic><topic>Semiconducting silicon</topic><topic>Semiconductor device structures</topic><topic>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</topic><topic>Single crystals</topic><topic>Substrates</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Seok, Seonho</creatorcontrib><creatorcontrib>Choi, Wonseo</creatorcontrib><creatorcontrib>Chun, Kukjin</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Mechanical &amp; Transportation Engineering Abstracts</collection><collection>Technology Research Database</collection><collection>Engineering Research Database</collection><collection>Mechanical Engineering Abstracts</collection><jtitle>Journal of micromechanics and microengineering</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Seok, Seonho</au><au>Choi, Wonseo</au><au>Chun, Kukjin</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>A novel linearly tunable MEMS variable capacitor</atitle><jtitle>Journal of micromechanics and microengineering</jtitle><date>2002-01-01</date><risdate>2002</risdate><volume>12</volume><issue>1</issue><spage>82</spage><epage>86</epage><pages>82-86</pages><issn>0960-1317</issn><eissn>1361-6439</eissn><abstract>The linearly tunable microelectromechanical systems (MEMS) capacitor with 608 comb fingers changing the overlap area is developed. Unlike the conventional micromachined capacitor using the gap between the parallel plates, the proposed capacitor adopts the overlap area as the tuning parameter. In addition, the tuning range of the proposed capacitor has large nominal capacitance C sub 0 , whereas the parallel plates have a range of C sub 0 /3 theoretically. The 6-mum-thick single-crystal silicon MEMS structure is bonded to the pyrex glass substrate using the glass-silicon anodic bonding technique and the chemical mechanical polish (CMP) to make the desired capacitor. Single-crystal silicon was chosen as a capacitor structure material because it has excellent mechanical properties greater than those of polysilicon and aluminium as the structure material, and the pyrex glass is used as a substrate instead of silicon to reduce the RF losses through the substrate over the high-frequency range. The measured capacitor shows a nominal capacitance of 1.4 pF, and 10% tuning range at 8V. The capacitor model is also developed to explain the parasitic effect over the high-frequency range and proved by using the Serenade software of the Ansoft Corporation.</abstract><cop>Bristol</cop><pub>IOP Publishing</pub><doi>10.1088/0960-1317/12/1/313</doi><tpages>5</tpages></addata></record>
fulltext fulltext
identifier ISSN: 0960-1317
ispartof Journal of micromechanics and microengineering, 2002-01, Vol.12 (1), p.82-86
issn 0960-1317
1361-6439
language eng
recordid cdi_proquest_miscellaneous_745649134
source Institute of Physics Journals
subjects Applied sciences
Bonding
Capacitance
Chemical mechanical polishing
Electronics
Exact sciences and technology
Glass
Microelectromechanical devices
Microelectronic fabrication (materials and surfaces technology)
Polysilicon
Semiconducting silicon
Semiconductor device structures
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Single crystals
Substrates
title A novel linearly tunable MEMS variable capacitor
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-24T00%3A52%3A14IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_pasca&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=A%20novel%20linearly%20tunable%20MEMS%20variable%20capacitor&rft.jtitle=Journal%20of%20micromechanics%20and%20microengineering&rft.au=Seok,%20Seonho&rft.date=2002-01-01&rft.volume=12&rft.issue=1&rft.spage=82&rft.epage=86&rft.pages=82-86&rft.issn=0960-1317&rft.eissn=1361-6439&rft_id=info:doi/10.1088/0960-1317/12/1/313&rft_dat=%3Cproquest_pasca%3E27630095%3C/proquest_pasca%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=27630095&rft_id=info:pmid/&rfr_iscdi=true