A novel linearly tunable MEMS variable capacitor
The linearly tunable microelectromechanical systems (MEMS) capacitor with 608 comb fingers changing the overlap area is developed. Unlike the conventional micromachined capacitor using the gap between the parallel plates, the proposed capacitor adopts the overlap area as the tuning parameter. In add...
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Veröffentlicht in: | Journal of micromechanics and microengineering 2002-01, Vol.12 (1), p.82-86 |
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creator | Seok, Seonho Choi, Wonseo Chun, Kukjin |
description | The linearly tunable microelectromechanical systems (MEMS) capacitor with 608 comb fingers changing the overlap area is developed. Unlike the conventional micromachined capacitor using the gap between the parallel plates, the proposed capacitor adopts the overlap area as the tuning parameter. In addition, the tuning range of the proposed capacitor has large nominal capacitance C sub 0 , whereas the parallel plates have a range of C sub 0 /3 theoretically. The 6-mum-thick single-crystal silicon MEMS structure is bonded to the pyrex glass substrate using the glass-silicon anodic bonding technique and the chemical mechanical polish (CMP) to make the desired capacitor. Single-crystal silicon was chosen as a capacitor structure material because it has excellent mechanical properties greater than those of polysilicon and aluminium as the structure material, and the pyrex glass is used as a substrate instead of silicon to reduce the RF losses through the substrate over the high-frequency range. The measured capacitor shows a nominal capacitance of 1.4 pF, and 10% tuning range at 8V. The capacitor model is also developed to explain the parasitic effect over the high-frequency range and proved by using the Serenade software of the Ansoft Corporation. |
doi_str_mv | 10.1088/0960-1317/12/1/313 |
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Unlike the conventional micromachined capacitor using the gap between the parallel plates, the proposed capacitor adopts the overlap area as the tuning parameter. In addition, the tuning range of the proposed capacitor has large nominal capacitance C sub 0 , whereas the parallel plates have a range of C sub 0 /3 theoretically. The 6-mum-thick single-crystal silicon MEMS structure is bonded to the pyrex glass substrate using the glass-silicon anodic bonding technique and the chemical mechanical polish (CMP) to make the desired capacitor. Single-crystal silicon was chosen as a capacitor structure material because it has excellent mechanical properties greater than those of polysilicon and aluminium as the structure material, and the pyrex glass is used as a substrate instead of silicon to reduce the RF losses through the substrate over the high-frequency range. The measured capacitor shows a nominal capacitance of 1.4 pF, and 10% tuning range at 8V. The capacitor model is also developed to explain the parasitic effect over the high-frequency range and proved by using the Serenade software of the Ansoft Corporation.</description><identifier>ISSN: 0960-1317</identifier><identifier>EISSN: 1361-6439</identifier><identifier>DOI: 10.1088/0960-1317/12/1/313</identifier><language>eng</language><publisher>Bristol: IOP Publishing</publisher><subject>Applied sciences ; Bonding ; Capacitance ; Chemical mechanical polishing ; Electronics ; Exact sciences and technology ; Glass ; Microelectromechanical devices ; Microelectronic fabrication (materials and surfaces technology) ; Polysilicon ; Semiconducting silicon ; Semiconductor device structures ; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices ; Single crystals ; Substrates</subject><ispartof>Journal of micromechanics and microengineering, 2002-01, Vol.12 (1), p.82-86</ispartof><rights>2002 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c410t-d3a9b29d356a1fcf4a4f3dcedc15f6a670acecc031476ef1967deec3172029b93</citedby><cites>FETCH-LOGICAL-c410t-d3a9b29d356a1fcf4a4f3dcedc15f6a670acecc031476ef1967deec3172029b93</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://iopscience.iop.org/article/10.1088/0960-1317/12/1/313/pdf$$EPDF$$P50$$Giop$$H</linktopdf><link.rule.ids>314,780,784,4024,27923,27924,27925,53830,53910</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=13395473$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Seok, Seonho</creatorcontrib><creatorcontrib>Choi, Wonseo</creatorcontrib><creatorcontrib>Chun, Kukjin</creatorcontrib><title>A novel linearly tunable MEMS variable capacitor</title><title>Journal of micromechanics and microengineering</title><description>The linearly tunable microelectromechanical systems (MEMS) capacitor with 608 comb fingers changing the overlap area is developed. Unlike the conventional micromachined capacitor using the gap between the parallel plates, the proposed capacitor adopts the overlap area as the tuning parameter. In addition, the tuning range of the proposed capacitor has large nominal capacitance C sub 0 , whereas the parallel plates have a range of C sub 0 /3 theoretically. The 6-mum-thick single-crystal silicon MEMS structure is bonded to the pyrex glass substrate using the glass-silicon anodic bonding technique and the chemical mechanical polish (CMP) to make the desired capacitor. Single-crystal silicon was chosen as a capacitor structure material because it has excellent mechanical properties greater than those of polysilicon and aluminium as the structure material, and the pyrex glass is used as a substrate instead of silicon to reduce the RF losses through the substrate over the high-frequency range. The measured capacitor shows a nominal capacitance of 1.4 pF, and 10% tuning range at 8V. The capacitor model is also developed to explain the parasitic effect over the high-frequency range and proved by using the Serenade software of the Ansoft Corporation.</description><subject>Applied sciences</subject><subject>Bonding</subject><subject>Capacitance</subject><subject>Chemical mechanical polishing</subject><subject>Electronics</subject><subject>Exact sciences and technology</subject><subject>Glass</subject><subject>Microelectromechanical devices</subject><subject>Microelectronic fabrication (materials and surfaces technology)</subject><subject>Polysilicon</subject><subject>Semiconducting silicon</subject><subject>Semiconductor device structures</subject><subject>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</subject><subject>Single crystals</subject><subject>Substrates</subject><issn>0960-1317</issn><issn>1361-6439</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2002</creationdate><recordtype>article</recordtype><recordid>eNqN0M9LwzAUB_AgCs7pP-CpFxUPtXlNmjbHMeYP2PCgnsNbmkAla2vSDfbfr3VDDwPx9HjweV8eX0KugT4ALYqESkFjYJAnkCaQMGAnZARMQCw4k6dk9APOyUUIn5QCFFCMCJ1EdbMxLnJVbdC7bdSta1w6Ey1mi7dog7763jS2qKuu8ZfkzKIL5uowx-TjcfY-fY7nr08v08k81hxoF5cM5TKVJcsEgtWWI7es1KbUkFmBIqeojdaUAc-FsSBFXhqj-wdTmsqlZGNyt89tffO1NqFTqypo4xzWplkHlfNMcAmM9_L2T5nmglEqsx6me6h9E4I3VrW-WqHfKqBqqFENLamhJQWpAtXX2B_dHNIxaHTWY62r8HvJmMx4Prh476qm_V_u_bE_dqotLdsBrqyLIA</recordid><startdate>20020101</startdate><enddate>20020101</enddate><creator>Seok, Seonho</creator><creator>Choi, Wonseo</creator><creator>Chun, Kukjin</creator><general>IOP Publishing</general><general>Institute of Physics</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7TB</scope><scope>8FD</scope><scope>FR3</scope><scope>7TC</scope></search><sort><creationdate>20020101</creationdate><title>A novel linearly tunable MEMS variable capacitor</title><author>Seok, Seonho ; Choi, Wonseo ; Chun, Kukjin</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c410t-d3a9b29d356a1fcf4a4f3dcedc15f6a670acecc031476ef1967deec3172029b93</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2002</creationdate><topic>Applied sciences</topic><topic>Bonding</topic><topic>Capacitance</topic><topic>Chemical mechanical polishing</topic><topic>Electronics</topic><topic>Exact sciences and technology</topic><topic>Glass</topic><topic>Microelectromechanical devices</topic><topic>Microelectronic fabrication (materials and surfaces technology)</topic><topic>Polysilicon</topic><topic>Semiconducting silicon</topic><topic>Semiconductor device structures</topic><topic>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</topic><topic>Single crystals</topic><topic>Substrates</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Seok, Seonho</creatorcontrib><creatorcontrib>Choi, Wonseo</creatorcontrib><creatorcontrib>Chun, Kukjin</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Mechanical & Transportation Engineering Abstracts</collection><collection>Technology Research Database</collection><collection>Engineering Research Database</collection><collection>Mechanical Engineering Abstracts</collection><jtitle>Journal of micromechanics and microengineering</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Seok, Seonho</au><au>Choi, Wonseo</au><au>Chun, Kukjin</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>A novel linearly tunable MEMS variable capacitor</atitle><jtitle>Journal of micromechanics and microengineering</jtitle><date>2002-01-01</date><risdate>2002</risdate><volume>12</volume><issue>1</issue><spage>82</spage><epage>86</epage><pages>82-86</pages><issn>0960-1317</issn><eissn>1361-6439</eissn><abstract>The linearly tunable microelectromechanical systems (MEMS) capacitor with 608 comb fingers changing the overlap area is developed. Unlike the conventional micromachined capacitor using the gap between the parallel plates, the proposed capacitor adopts the overlap area as the tuning parameter. In addition, the tuning range of the proposed capacitor has large nominal capacitance C sub 0 , whereas the parallel plates have a range of C sub 0 /3 theoretically. The 6-mum-thick single-crystal silicon MEMS structure is bonded to the pyrex glass substrate using the glass-silicon anodic bonding technique and the chemical mechanical polish (CMP) to make the desired capacitor. Single-crystal silicon was chosen as a capacitor structure material because it has excellent mechanical properties greater than those of polysilicon and aluminium as the structure material, and the pyrex glass is used as a substrate instead of silicon to reduce the RF losses through the substrate over the high-frequency range. The measured capacitor shows a nominal capacitance of 1.4 pF, and 10% tuning range at 8V. The capacitor model is also developed to explain the parasitic effect over the high-frequency range and proved by using the Serenade software of the Ansoft Corporation.</abstract><cop>Bristol</cop><pub>IOP Publishing</pub><doi>10.1088/0960-1317/12/1/313</doi><tpages>5</tpages></addata></record> |
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subjects | Applied sciences Bonding Capacitance Chemical mechanical polishing Electronics Exact sciences and technology Glass Microelectromechanical devices Microelectronic fabrication (materials and surfaces technology) Polysilicon Semiconducting silicon Semiconductor device structures Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Single crystals Substrates |
title | A novel linearly tunable MEMS variable capacitor |
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