Exciton Storage in Semiconductor Self-Assembled Quantum Dots
Storage and retrieval of excitons were demonstrated with semiconductor self-assembled quantum dots (QDs). The optically generated excitons were dissociated and stored as separated electron-hole pairs in coupled QD pairs. A bias voltage restored the excitons, which recombined radiatively to provide a...
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| Veröffentlicht in: | Science (American Association for the Advancement of Science) 1999-12, Vol.286 (5448), p.2312-2314 |
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| creator | Lundstrom, T. Schoenfeld, W. Lee, H. Petroff, P. M. |
| description | Storage and retrieval of excitons were demonstrated with semiconductor self-assembled quantum dots (QDs). The optically generated excitons were dissociated and stored as separated electron-hole pairs in coupled QD pairs. A bias voltage restored the excitons, which recombined radiatively to provide a readout optical signal. The localization of the spatially separated electron-hole pair in QDs was responsible for the ultralong storage times, which were on the order of several seconds. The present limits of this optical storage medium are discussed. |
| doi_str_mv | 10.1126/science.286.5448.2312 |
| format | Article |
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M.</creator><creatorcontrib>Lundstrom, T. ; Schoenfeld, W. ; Lee, H. ; Petroff, P. M.</creatorcontrib><description>Storage and retrieval of excitons were demonstrated with semiconductor self-assembled quantum dots (QDs). The optically generated excitons were dissociated and stored as separated electron-hole pairs in coupled QD pairs. A bias voltage restored the excitons, which recombined radiatively to provide a readout optical signal. The localization of the spatially separated electron-hole pair in QDs was responsible for the ultralong storage times, which were on the order of several seconds. The present limits of this optical storage medium are discussed.</description><identifier>ISSN: 0036-8075</identifier><identifier>EISSN: 1095-9203</identifier><identifier>DOI: 10.1126/science.286.5448.2312</identifier><identifier>PMID: 10600734</identifier><identifier>CODEN: SCIEAS</identifier><language>eng</language><publisher>Washington, DC: American Society for the Advancement of Science</publisher><subject>Climate ; Computer storage devices ; Condensed matter: electronic structure, electrical, magnetic, and optical properties ; Electric potential ; Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems ; Electron states and collective excitations in thin films, multilayers, quantum wells, mesoscopic and nanoscale systems ; Electronic structure ; Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures ; Electrons ; Energy ; Exact sciences and technology ; Excitons ; Iii-v semiconductors ; Information storage and retrieval systems ; Lasers ; Low temperature ; Luminescence ; Materials ; Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation ; Optical properties of specific thin films ; Physics ; Semiconductors ; Storage ; Storage time</subject><ispartof>Science (American Association for the Advancement of Science), 1999-12, Vol.286 (5448), p.2312-2314</ispartof><rights>Copyright 1999 American Association for the Advancement of Science</rights><rights>2000 INIST-CNRS</rights><rights>COPYRIGHT 1999 American Association for the Advancement of Science</rights><rights>COPYRIGHT 1999 American Association for the Advancement of Science</rights><rights>Copyright American Association for the Advancement of Science Dec 17, 1999</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c757t-9d9b18746d91d145c0c63f81b0ed4a0d7f01ffd0c3721e592073641d27f6f2a03</citedby><cites>FETCH-LOGICAL-c757t-9d9b18746d91d145c0c63f81b0ed4a0d7f01ffd0c3721e592073641d27f6f2a03</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://www.jstor.org/stable/pdf/2899750$$EPDF$$P50$$Gjstor$$H</linktopdf><linktohtml>$$Uhttps://www.jstor.org/stable/2899750$$EHTML$$P50$$Gjstor$$H</linktohtml><link.rule.ids>314,776,780,799,2871,2872,27903,27904,57995,58228</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=1230983$$DView record in Pascal Francis$$Hfree_for_read</backlink><backlink>$$Uhttps://www.ncbi.nlm.nih.gov/pubmed/10600734$$D View this record in MEDLINE/PubMed$$Hfree_for_read</backlink></links><search><creatorcontrib>Lundstrom, T.</creatorcontrib><creatorcontrib>Schoenfeld, W.</creatorcontrib><creatorcontrib>Lee, H.</creatorcontrib><creatorcontrib>Petroff, P. 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The present limits of this optical storage medium are discussed.</description><subject>Climate</subject><subject>Computer storage devices</subject><subject>Condensed matter: electronic structure, electrical, magnetic, and optical properties</subject><subject>Electric potential</subject><subject>Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems</subject><subject>Electron states and collective excitations in thin films, multilayers, quantum wells, mesoscopic and nanoscale systems</subject><subject>Electronic structure</subject><subject>Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures</subject><subject>Electrons</subject><subject>Energy</subject><subject>Exact sciences and technology</subject><subject>Excitons</subject><subject>Iii-v semiconductors</subject><subject>Information storage and retrieval systems</subject><subject>Lasers</subject><subject>Low temperature</subject><subject>Luminescence</subject><subject>Materials</subject><subject>Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation</subject><subject>Optical properties of specific thin films</subject><subject>Physics</subject><subject>Semiconductors</subject><subject>Storage</subject><subject>Storage time</subject><issn>0036-8075</issn><issn>1095-9203</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1999</creationdate><recordtype>article</recordtype><sourceid>8G5</sourceid><sourceid>BEC</sourceid><sourceid>BENPR</sourceid><sourceid>GUQSH</sourceid><sourceid>M2O</sourceid><recordid>eNqN0l1v0zAUBuAIgVg3-AeAKoTELpbij_gjEjeljDKpokIDbi3XPo5SJfaIE2n797ikAgoTqnLhxH6OFR-_WfYcoxnGhL-JpgZvYEYkn7GikDNCMXmQTTAqWV4SRB9mE4QozyUS7CQ7jXGLUFor6ePsBCOOkKDFJHt7eWvqPvjpdR86XcG0Tq_Q1iZ4O5g0l74al89jhHbTgJ1-HrTvh3b6PvTxSfbI6SbC0_14ln39cPll8TFfrZdXi_kqN4KJPi9tucFSFNyW2OKCGWQ4dRJvENhCIyscws5ZZKggGFj6eUF5gS0RjjuiET3LXo_73nTh-wCxV20dDTSN9hCGqERBhUwlLMnz_0osUwMw5XRHX_5Ft2HofDqHIpgyWZCf6GJElW5A1d6FvtOmAg-dboIHV6fpOZNMcF6Uief38PTYsaX_-vMDn0gPt32lhxjV1fWno-n629H03fJYKperA3pxHzWhaaAClS58sT7gbOSmCzF24NRNV7e6u1MYqV2C1T7BKiVY7RKsdglOdS_21zJsWrB_VI2RTeDVHuhodOM67U0dfztCUSlpYs9Gto0pxb-WiSxLwRD9AY7s_Pg</recordid><startdate>19991217</startdate><enddate>19991217</enddate><creator>Lundstrom, T.</creator><creator>Schoenfeld, W.</creator><creator>Lee, H.</creator><creator>Petroff, P. 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M.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Exciton Storage in Semiconductor Self-Assembled Quantum Dots</atitle><jtitle>Science (American Association for the Advancement of Science)</jtitle><addtitle>Science</addtitle><date>1999-12-17</date><risdate>1999</risdate><volume>286</volume><issue>5448</issue><spage>2312</spage><epage>2314</epage><pages>2312-2314</pages><issn>0036-8075</issn><eissn>1095-9203</eissn><coden>SCIEAS</coden><abstract>Storage and retrieval of excitons were demonstrated with semiconductor self-assembled quantum dots (QDs). The optically generated excitons were dissociated and stored as separated electron-hole pairs in coupled QD pairs. A bias voltage restored the excitons, which recombined radiatively to provide a readout optical signal. The localization of the spatially separated electron-hole pair in QDs was responsible for the ultralong storage times, which were on the order of several seconds. The present limits of this optical storage medium are discussed.</abstract><cop>Washington, DC</cop><pub>American Society for the Advancement of Science</pub><pmid>10600734</pmid><doi>10.1126/science.286.5448.2312</doi><tpages>3</tpages></addata></record> |
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| identifier | ISSN: 0036-8075 |
| ispartof | Science (American Association for the Advancement of Science), 1999-12, Vol.286 (5448), p.2312-2314 |
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| source | American Association for the Advancement of Science; Jstor Complete Legacy |
| subjects | Climate Computer storage devices Condensed matter: electronic structure, electrical, magnetic, and optical properties Electric potential Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems Electron states and collective excitations in thin films, multilayers, quantum wells, mesoscopic and nanoscale systems Electronic structure Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures Electrons Energy Exact sciences and technology Excitons Iii-v semiconductors Information storage and retrieval systems Lasers Low temperature Luminescence Materials Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation Optical properties of specific thin films Physics Semiconductors Storage Storage time |
| title | Exciton Storage in Semiconductor Self-Assembled Quantum Dots |
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