Isotropic Channel Mobility in UMOSFETs on 4H-SiC C-Face with Vicinal Off-Angle

UMOSFET is theoretically suitable to decrease the on-resistance of the MOSFET. In this study, in order to determine the cell structure of the SiC UMOSFET with extremely low on-resistance, influences of the orientation of the trench and the off-angle of the wafer on the MOS properties are investigate...

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Veröffentlicht in:	Materials science forum 2010-01, Vol.645-648, p.999-1004
Hauptverfasser:	Kojima, Kazutoshi, Fukuda, Kenji, Okumura, Hajime, Kato, Makoto, Takatsuka, Akio, Harada, Shinsuke, Ito, Sachiko
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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