Quasi-Freestanding Graphene on SiC(0001)

Quasi-Freestanding Graphene on SiC(0001)

We report on a comprehensive study of the properties of quasi-freestanding monolayer and bilayer graphene produced by conversion of the (6√3×6√3)R30° reconstruction into graphene via intercalation of hydrogen. The conversion is confirmed by photoelectron spectroscopy and Raman spectroscopy. By using...

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Veröffentlicht in:Materials science forum 2010-04, Vol.645-648, p.629-632
Hauptverfasser: Röhrl, Jonas, Ostler, Markus, Jobst, Johannes, Seyller, Thomas, Hundhausen, Martin, Weber, Heiko B., Speck, Florian, Ley, Lothar, Waldmann, Daniel
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container_title Materials science forum
container_volume 645-648
creator Röhrl, Jonas
Ostler, Markus
Jobst, Johannes
Seyller, Thomas
Hundhausen, Martin
Weber, Heiko B.
Speck, Florian
Ley, Lothar
Waldmann, Daniel
description We report on a comprehensive study of the properties of quasi-freestanding monolayer and bilayer graphene produced by conversion of the (6√3×6√3)R30° reconstruction into graphene via intercalation of hydrogen. The conversion is confirmed by photoelectron spectroscopy and Raman spectroscopy. By using infrared absorption spectroscopy we show that the underlying SiC(0001) surface is terminated by hydrogen in the form of Si-H bonds. Using Hall effect measurements we have determined the carrier concentration and type as well as the mobility which lies well above 1000 cm2/Vs despite a significant amount of short range scatterers detected by Raman spectroscopy.
doi_str_mv 10.4028/www.scientific.net/MSF.645-648.629
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