Raman Characterization of Doped 3C-SiC/Si for Different Silicon Substrates and C/Si Ratios

Raman microscopy has been used to study transport properties in hetero-epitaxial 3C-SiC/Si thin films. By an accurate analysis of the Longitudinal Optic phonon-plasmon coupled (LOPC) modes in n-type doped 3C-SiC films, free carrier density and mobility has been determined. A study of doped 3C-SiC re...

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Veröffentlicht in:	Materials science forum 2010-01, Vol.645-648, p.255-258, Article 255
Hauptverfasser:	Piluso, Nicolò, La Via, Francesco, Severino, Andrea, Anzalone, Ruggero, Canino, Andrea, Abbondanza, Giuseppe, Condorelli, Giuseppe, Camarda, Massimo
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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