Quantitative X-ray Diffraction Analysis and Modeling of the Crystallization Process in Amorphous Si-B-C-N Polymer-Derived Ceramics

Amorphous Si–B–C–N polymer‐derived ceramics (PDCs) with 8.3 at.% of boron were synthesized by thermolysis of the boron‐modified poly(methylvinylsilazane). The isochronal crystallization process was quantitatively studied by X‐ray diffraction (XRD) measurements using variable heating rates. Crystalli...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:Journal of the American Ceramic Society 2010-05, Vol.93 (5), p.1470-1478
Hauptverfasser: Tavakoli, Amir Hossein, Gerstel, Peter, Golczewski, Jerzy Andrzej, Bill, Joachim
Format: Artikel
Sprache:eng
Schlagworte:
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
container_end_page 1478
container_issue 5
container_start_page 1470
container_title Journal of the American Ceramic Society
container_volume 93
creator Tavakoli, Amir Hossein
Gerstel, Peter
Golczewski, Jerzy Andrzej
Bill, Joachim
description Amorphous Si–B–C–N polymer‐derived ceramics (PDCs) with 8.3 at.% of boron were synthesized by thermolysis of the boron‐modified poly(methylvinylsilazane). The isochronal crystallization process was quantitatively studied by X‐ray diffraction (XRD) measurements using variable heating rates. Crystalline structures form within the amorphous Si–B–C–N PDCs at two stages including the formation of nanocrystalline SiC (NC‐SiC) at the first stage followed by the formation of nanocrystalline Si3N4 (NC‐Si3N4) and additional NC‐SiC at the second stage. The change of the SiC crystallite size with temperature determined from the XRD analysis was used as a part of input data for the modeling. The metastable phase fraction diagrams were computed using an available model of metastable phase equilibria including amorphous and nanocrystalline phases for various modeling parameters and variable heating rates as well. The modeling performed is consistent with the experimental results to a large extent. The impact of modeling free parameters is discussed in order to explain the discrepancies observed between the experimental and computational results. The extended study of the NC‐SiC formation at the first stage of crystallization justifies that this process is not purely controlled by kinetics and proves a crucial role of the metastable phase equilibrium between the amorphous Si–C–N domains and NC‐SiC.
doi_str_mv 10.1111/j.1551-2916.2009.03591.x
format Article
fullrecord <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_proquest_miscellaneous_743735335</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>1692375358</sourcerecordid><originalsourceid>FETCH-LOGICAL-c4781-52a5363bc47ae848073f43d35bbb08f38c7d03b83daaf4eb40ca315d587402f83</originalsourceid><addsrcrecordid>eNqNkc2P1CAYxonRxHH0fyBe9EKFAoWezEx3Z9Ws4_qV9UZoS11GWkbo6NSjf7nMjNmDB5WQ8L7h9zx8PABAgjOSxrNNRjgnKC9JkeUYlxmmvCTZ_g6Y3W7cBTOMcY6EzPF98CDGTWpJKdkM_Hy708NoRz3abwZ-QkFP8Mx2XdDNaP0AF4N2U7QR6qGFr31rnB0-Q9_B8cbAKkxx1M7ZH_oIXwXfmBihTbreh-2N30X43qIlqtAaXnk39SagMxPSWS2sTNC9beJDcK_TLppHv9c5-Lg6_1C9QJdvLl5Wi0vUMCEJ4rnmtKB16rSRTGJBO0Zbyuu6xrKjshEtprWkrdYdMzXDjaaEt1wKhvNO0jl4cvLdBv91Z-Koehsb45weTLqoEowKymmac_D0ryQpypwKTrn8N5pLKjAnjCT08R_oxu9C-t-ociJKTBjGCZInqAk-xmA6tQ2212FSBKtD4GqjDrmqQ67qELg6Bq72Sfr8JP1unZn-W6deLarzY50c0MnBxtHsbx10-KIKkR6srtcXihfr5er63VKt6C_BXb_8</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>217901400</pqid></control><display><type>article</type><title>Quantitative X-ray Diffraction Analysis and Modeling of the Crystallization Process in Amorphous Si-B-C-N Polymer-Derived Ceramics</title><source>Wiley Online Library All Journals</source><creator>Tavakoli, Amir Hossein ; Gerstel, Peter ; Golczewski, Jerzy Andrzej ; Bill, Joachim</creator><creatorcontrib>Tavakoli, Amir Hossein ; Gerstel, Peter ; Golczewski, Jerzy Andrzej ; Bill, Joachim</creatorcontrib><description>Amorphous Si–B–C–N polymer‐derived ceramics (PDCs) with 8.3 at.% of boron were synthesized by thermolysis of the boron‐modified poly(methylvinylsilazane). The isochronal crystallization process was quantitatively studied by X‐ray diffraction (XRD) measurements using variable heating rates. Crystalline structures form within the amorphous Si–B–C–N PDCs at two stages including the formation of nanocrystalline SiC (NC‐SiC) at the first stage followed by the formation of nanocrystalline Si3N4 (NC‐Si3N4) and additional NC‐SiC at the second stage. The change of the SiC crystallite size with temperature determined from the XRD analysis was used as a part of input data for the modeling. The metastable phase fraction diagrams were computed using an available model of metastable phase equilibria including amorphous and nanocrystalline phases for various modeling parameters and variable heating rates as well. The modeling performed is consistent with the experimental results to a large extent. The impact of modeling free parameters is discussed in order to explain the discrepancies observed between the experimental and computational results. The extended study of the NC‐SiC formation at the first stage of crystallization justifies that this process is not purely controlled by kinetics and proves a crucial role of the metastable phase equilibrium between the amorphous Si–C–N domains and NC‐SiC.</description><identifier>ISSN: 0002-7820</identifier><identifier>EISSN: 1551-2916</identifier><identifier>DOI: 10.1111/j.1551-2916.2009.03591.x</identifier><identifier>CODEN: JACTAW</identifier><language>eng</language><publisher>Malden, USA: Blackwell Publishing Inc</publisher><subject>Boron ; Ceramics ; Crystallization ; Diffraction ; Mathematical models ; Metastable phases ; Modelling ; Nanocrystals ; Polymers ; Silicon carbide ; Studies</subject><ispartof>Journal of the American Ceramic Society, 2010-05, Vol.93 (5), p.1470-1478</ispartof><rights>2010 The American Ceramic Society</rights><rights>Copyright American Ceramic Society May 2010</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c4781-52a5363bc47ae848073f43d35bbb08f38c7d03b83daaf4eb40ca315d587402f83</citedby><cites>FETCH-LOGICAL-c4781-52a5363bc47ae848073f43d35bbb08f38c7d03b83daaf4eb40ca315d587402f83</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://onlinelibrary.wiley.com/doi/pdf/10.1111%2Fj.1551-2916.2009.03591.x$$EPDF$$P50$$Gwiley$$H</linktopdf><linktohtml>$$Uhttps://onlinelibrary.wiley.com/doi/full/10.1111%2Fj.1551-2916.2009.03591.x$$EHTML$$P50$$Gwiley$$H</linktohtml><link.rule.ids>314,780,784,1417,27923,27924,45573,45574</link.rule.ids></links><search><creatorcontrib>Tavakoli, Amir Hossein</creatorcontrib><creatorcontrib>Gerstel, Peter</creatorcontrib><creatorcontrib>Golczewski, Jerzy Andrzej</creatorcontrib><creatorcontrib>Bill, Joachim</creatorcontrib><title>Quantitative X-ray Diffraction Analysis and Modeling of the Crystallization Process in Amorphous Si-B-C-N Polymer-Derived Ceramics</title><title>Journal of the American Ceramic Society</title><description>Amorphous Si–B–C–N polymer‐derived ceramics (PDCs) with 8.3 at.% of boron were synthesized by thermolysis of the boron‐modified poly(methylvinylsilazane). The isochronal crystallization process was quantitatively studied by X‐ray diffraction (XRD) measurements using variable heating rates. Crystalline structures form within the amorphous Si–B–C–N PDCs at two stages including the formation of nanocrystalline SiC (NC‐SiC) at the first stage followed by the formation of nanocrystalline Si3N4 (NC‐Si3N4) and additional NC‐SiC at the second stage. The change of the SiC crystallite size with temperature determined from the XRD analysis was used as a part of input data for the modeling. The metastable phase fraction diagrams were computed using an available model of metastable phase equilibria including amorphous and nanocrystalline phases for various modeling parameters and variable heating rates as well. The modeling performed is consistent with the experimental results to a large extent. The impact of modeling free parameters is discussed in order to explain the discrepancies observed between the experimental and computational results. The extended study of the NC‐SiC formation at the first stage of crystallization justifies that this process is not purely controlled by kinetics and proves a crucial role of the metastable phase equilibrium between the amorphous Si–C–N domains and NC‐SiC.</description><subject>Boron</subject><subject>Ceramics</subject><subject>Crystallization</subject><subject>Diffraction</subject><subject>Mathematical models</subject><subject>Metastable phases</subject><subject>Modelling</subject><subject>Nanocrystals</subject><subject>Polymers</subject><subject>Silicon carbide</subject><subject>Studies</subject><issn>0002-7820</issn><issn>1551-2916</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2010</creationdate><recordtype>article</recordtype><recordid>eNqNkc2P1CAYxonRxHH0fyBe9EKFAoWezEx3Z9Ws4_qV9UZoS11GWkbo6NSjf7nMjNmDB5WQ8L7h9zx8PABAgjOSxrNNRjgnKC9JkeUYlxmmvCTZ_g6Y3W7cBTOMcY6EzPF98CDGTWpJKdkM_Hy708NoRz3abwZ-QkFP8Mx2XdDNaP0AF4N2U7QR6qGFr31rnB0-Q9_B8cbAKkxx1M7ZH_oIXwXfmBihTbreh-2N30X43qIlqtAaXnk39SagMxPSWS2sTNC9beJDcK_TLppHv9c5-Lg6_1C9QJdvLl5Wi0vUMCEJ4rnmtKB16rSRTGJBO0Zbyuu6xrKjshEtprWkrdYdMzXDjaaEt1wKhvNO0jl4cvLdBv91Z-Koehsb45weTLqoEowKymmac_D0ryQpypwKTrn8N5pLKjAnjCT08R_oxu9C-t-ociJKTBjGCZInqAk-xmA6tQ2212FSBKtD4GqjDrmqQ67qELg6Bq72Sfr8JP1unZn-W6deLarzY50c0MnBxtHsbx10-KIKkR6srtcXihfr5er63VKt6C_BXb_8</recordid><startdate>201005</startdate><enddate>201005</enddate><creator>Tavakoli, Amir Hossein</creator><creator>Gerstel, Peter</creator><creator>Golczewski, Jerzy Andrzej</creator><creator>Bill, Joachim</creator><general>Blackwell Publishing Inc</general><general>Wiley Subscription Services, Inc</general><scope>BSCLL</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7QQ</scope><scope>7SR</scope><scope>8FD</scope><scope>JG9</scope></search><sort><creationdate>201005</creationdate><title>Quantitative X-ray Diffraction Analysis and Modeling of the Crystallization Process in Amorphous Si-B-C-N Polymer-Derived Ceramics</title><author>Tavakoli, Amir Hossein ; Gerstel, Peter ; Golczewski, Jerzy Andrzej ; Bill, Joachim</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c4781-52a5363bc47ae848073f43d35bbb08f38c7d03b83daaf4eb40ca315d587402f83</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2010</creationdate><topic>Boron</topic><topic>Ceramics</topic><topic>Crystallization</topic><topic>Diffraction</topic><topic>Mathematical models</topic><topic>Metastable phases</topic><topic>Modelling</topic><topic>Nanocrystals</topic><topic>Polymers</topic><topic>Silicon carbide</topic><topic>Studies</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Tavakoli, Amir Hossein</creatorcontrib><creatorcontrib>Gerstel, Peter</creatorcontrib><creatorcontrib>Golczewski, Jerzy Andrzej</creatorcontrib><creatorcontrib>Bill, Joachim</creatorcontrib><collection>Istex</collection><collection>CrossRef</collection><collection>Ceramic Abstracts</collection><collection>Engineered Materials Abstracts</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><jtitle>Journal of the American Ceramic Society</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Tavakoli, Amir Hossein</au><au>Gerstel, Peter</au><au>Golczewski, Jerzy Andrzej</au><au>Bill, Joachim</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Quantitative X-ray Diffraction Analysis and Modeling of the Crystallization Process in Amorphous Si-B-C-N Polymer-Derived Ceramics</atitle><jtitle>Journal of the American Ceramic Society</jtitle><date>2010-05</date><risdate>2010</risdate><volume>93</volume><issue>5</issue><spage>1470</spage><epage>1478</epage><pages>1470-1478</pages><issn>0002-7820</issn><eissn>1551-2916</eissn><coden>JACTAW</coden><abstract>Amorphous Si–B–C–N polymer‐derived ceramics (PDCs) with 8.3 at.% of boron were synthesized by thermolysis of the boron‐modified poly(methylvinylsilazane). The isochronal crystallization process was quantitatively studied by X‐ray diffraction (XRD) measurements using variable heating rates. Crystalline structures form within the amorphous Si–B–C–N PDCs at two stages including the formation of nanocrystalline SiC (NC‐SiC) at the first stage followed by the formation of nanocrystalline Si3N4 (NC‐Si3N4) and additional NC‐SiC at the second stage. The change of the SiC crystallite size with temperature determined from the XRD analysis was used as a part of input data for the modeling. The metastable phase fraction diagrams were computed using an available model of metastable phase equilibria including amorphous and nanocrystalline phases for various modeling parameters and variable heating rates as well. The modeling performed is consistent with the experimental results to a large extent. The impact of modeling free parameters is discussed in order to explain the discrepancies observed between the experimental and computational results. The extended study of the NC‐SiC formation at the first stage of crystallization justifies that this process is not purely controlled by kinetics and proves a crucial role of the metastable phase equilibrium between the amorphous Si–C–N domains and NC‐SiC.</abstract><cop>Malden, USA</cop><pub>Blackwell Publishing Inc</pub><doi>10.1111/j.1551-2916.2009.03591.x</doi><tpages>9</tpages></addata></record>
fulltext fulltext
identifier ISSN: 0002-7820
ispartof Journal of the American Ceramic Society, 2010-05, Vol.93 (5), p.1470-1478
issn 0002-7820
1551-2916
language eng
recordid cdi_proquest_miscellaneous_743735335
source Wiley Online Library All Journals
subjects Boron
Ceramics
Crystallization
Diffraction
Mathematical models
Metastable phases
Modelling
Nanocrystals
Polymers
Silicon carbide
Studies
title Quantitative X-ray Diffraction Analysis and Modeling of the Crystallization Process in Amorphous Si-B-C-N Polymer-Derived Ceramics
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-08T13%3A33%3A47IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Quantitative%20X-ray%20Diffraction%20Analysis%20and%20Modeling%20of%20the%20Crystallization%20Process%20in%20Amorphous%20Si-B-C-N%20Polymer-Derived%20Ceramics&rft.jtitle=Journal%20of%20the%20American%20Ceramic%20Society&rft.au=Tavakoli,%20Amir%20Hossein&rft.date=2010-05&rft.volume=93&rft.issue=5&rft.spage=1470&rft.epage=1478&rft.pages=1470-1478&rft.issn=0002-7820&rft.eissn=1551-2916&rft.coden=JACTAW&rft_id=info:doi/10.1111/j.1551-2916.2009.03591.x&rft_dat=%3Cproquest_cross%3E1692375358%3C/proquest_cross%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=217901400&rft_id=info:pmid/&rfr_iscdi=true