Operation of Silicon Carbide BJTs Free from Bipolar Degradation
The mechanisms of bipolar degradation in silicon carbide BJTs are investigated and identified. Bipolar degradation occurs as result of stacking fault (SF) growth within the low-doped collector region. A stacking fault blocks vertical current transport through the collector, driving the defective reg...
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| creator | Östling, Mikael Gumaelius, Krister Keri, Imre Reimark, Mats Svedberg, Jan Olov Konstantinov, Andrei O. Zaring, Carina Domeij, Martin |
| description | The mechanisms of bipolar degradation in silicon carbide BJTs are investigated and identified. Bipolar degradation occurs as result of stacking fault (SF) growth within the low-doped collector region. A stacking fault blocks vertical current transport through the collector, driving the defective region into saturation. This results in considerable drop of emitter current gain if the BJT is run at a reasonably low collector-emitter bias. The base region does not play any significant role in bipolar degradation. Long-term stress tests have shown full stability of large-area high-power BJTs under minority carrier injection conditions provided the devices are fabricated using low Basal Plane Dislocation (BPD) material. However, an approximately 20% current gain compression is observed for the first 30-60 hours of burn-in under common emitter operation, which is related to instability of surface recombination in the passive base region. |
| doi_str_mv | 10.4028/www.scientific.net/MSF.645-648.1057 |
| format | Conference Proceeding |
| fullrecord | <record><control><sourceid>proquest_swepu</sourceid><recordid>TN_cdi_proquest_miscellaneous_743727026</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>743727026</sourcerecordid><originalsourceid>FETCH-LOGICAL-c412t-9af43d5355841f65cbb71b03f71b4da1f705bff3fa0822cc238a5f5217ae84f23</originalsourceid><addsrcrecordid>eNqVkLtOwzAYRi0EEqXwDtkYIKnt2HE6odILFxV1aGG1HMduXdI42Kkq3h6XIJgZ_svwfWc4ANwgmBCI88HhcEi8NKpujTYyqVU7eFnOkozQOCN5giBlJ6CHsgzHQ0bxKehBTGlMCcvOwYX3WwhTlKOsB-4WjXKiNbaOrI6WpjIyvGPhClOq6P555aOZUyrSzu6ie9PYSrhootZOlN-tS3CmReXV1c_tg9fZdDV-jOeLh6fxaB5LgnAbD4UmaUlTSnOCdEZlUTBUwFSHTUqBNIO00DrVAuYYS4nTXFBNMWJC5UTjtA9uO64_qGZf8MaZnXCf3ArDJ-ZtxK1b8_d2w4ehg0L8uos3zn7slW_5znipqkrUyu49ZyRlmEGcheS4S0pnvXdK_6IR5EfZPMjmf7J5kM2DbB5kh8n5UXagTDtK60TtWyU3fGv3rg5K_sX5ArAskmU</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>conference_proceeding</recordtype><pqid>743727026</pqid></control><display><type>conference_proceeding</type><title>Operation of Silicon Carbide BJTs Free from Bipolar Degradation</title><source>Scientific.net Journals</source><creator>Östling, Mikael ; Gumaelius, Krister ; Keri, Imre ; Reimark, Mats ; Svedberg, Jan Olov ; Konstantinov, Andrei O. ; Zaring, Carina ; Domeij, Martin</creator><creatorcontrib>Östling, Mikael ; Gumaelius, Krister ; Keri, Imre ; Reimark, Mats ; Svedberg, Jan Olov ; Konstantinov, Andrei O. ; Zaring, Carina ; Domeij, Martin</creatorcontrib><description>The mechanisms of bipolar degradation in silicon carbide BJTs are investigated and identified. Bipolar degradation occurs as result of stacking fault (SF) growth within the low-doped collector region. A stacking fault blocks vertical current transport through the collector, driving the defective region into saturation. This results in considerable drop of emitter current gain if the BJT is run at a reasonably low collector-emitter bias. The base region does not play any significant role in bipolar degradation. Long-term stress tests have shown full stability of large-area high-power BJTs under minority carrier injection conditions provided the devices are fabricated using low Basal Plane Dislocation (BPD) material. However, an approximately 20% current gain compression is observed for the first 30-60 hours of burn-in under common emitter operation, which is related to instability of surface recombination in the passive base region.</description><identifier>ISSN: 0255-5476</identifier><identifier>ISSN: 1662-9752</identifier><identifier>EISSN: 1662-9752</identifier><identifier>DOI: 10.4028/www.scientific.net/MSF.645-648.1057</identifier><language>eng</language><publisher>Trans Tech Publications Ltd</publisher><subject>bipolar degradation ; BJT ; BPD</subject><ispartof>Materials science forum, 2010, Vol.645-648, p.1057-1060</ispartof><rights>2010 Trans Tech Publications Ltd</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c412t-9af43d5355841f65cbb71b03f71b4da1f705bff3fa0822cc238a5f5217ae84f23</citedby><cites>FETCH-LOGICAL-c412t-9af43d5355841f65cbb71b03f71b4da1f705bff3fa0822cc238a5f5217ae84f23</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Uhttps://www.scientific.net/Image/TitleCover/907?width=600</thumbnail><link.rule.ids>309,310,314,777,781,882,27905,27906</link.rule.ids><backlink>$$Uhttps://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-92171$$DView record from Swedish Publication Index$$Hfree_for_read</backlink></links><search><creatorcontrib>Östling, Mikael</creatorcontrib><creatorcontrib>Gumaelius, Krister</creatorcontrib><creatorcontrib>Keri, Imre</creatorcontrib><creatorcontrib>Reimark, Mats</creatorcontrib><creatorcontrib>Svedberg, Jan Olov</creatorcontrib><creatorcontrib>Konstantinov, Andrei O.</creatorcontrib><creatorcontrib>Zaring, Carina</creatorcontrib><creatorcontrib>Domeij, Martin</creatorcontrib><title>Operation of Silicon Carbide BJTs Free from Bipolar Degradation</title><title>Materials science forum</title><description>The mechanisms of bipolar degradation in silicon carbide BJTs are investigated and identified. Bipolar degradation occurs as result of stacking fault (SF) growth within the low-doped collector region. A stacking fault blocks vertical current transport through the collector, driving the defective region into saturation. This results in considerable drop of emitter current gain if the BJT is run at a reasonably low collector-emitter bias. The base region does not play any significant role in bipolar degradation. Long-term stress tests have shown full stability of large-area high-power BJTs under minority carrier injection conditions provided the devices are fabricated using low Basal Plane Dislocation (BPD) material. However, an approximately 20% current gain compression is observed for the first 30-60 hours of burn-in under common emitter operation, which is related to instability of surface recombination in the passive base region.</description><subject>bipolar degradation</subject><subject>BJT</subject><subject>BPD</subject><issn>0255-5476</issn><issn>1662-9752</issn><issn>1662-9752</issn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>2010</creationdate><recordtype>conference_proceeding</recordtype><recordid>eNqVkLtOwzAYRi0EEqXwDtkYIKnt2HE6odILFxV1aGG1HMduXdI42Kkq3h6XIJgZ_svwfWc4ANwgmBCI88HhcEi8NKpujTYyqVU7eFnOkozQOCN5giBlJ6CHsgzHQ0bxKehBTGlMCcvOwYX3WwhTlKOsB-4WjXKiNbaOrI6WpjIyvGPhClOq6P555aOZUyrSzu6ie9PYSrhootZOlN-tS3CmReXV1c_tg9fZdDV-jOeLh6fxaB5LgnAbD4UmaUlTSnOCdEZlUTBUwFSHTUqBNIO00DrVAuYYS4nTXFBNMWJC5UTjtA9uO64_qGZf8MaZnXCf3ArDJ-ZtxK1b8_d2w4ehg0L8uos3zn7slW_5znipqkrUyu49ZyRlmEGcheS4S0pnvXdK_6IR5EfZPMjmf7J5kM2DbB5kh8n5UXagTDtK60TtWyU3fGv3rg5K_sX5ArAskmU</recordid><startdate>20100101</startdate><enddate>20100101</enddate><creator>Östling, Mikael</creator><creator>Gumaelius, Krister</creator><creator>Keri, Imre</creator><creator>Reimark, Mats</creator><creator>Svedberg, Jan Olov</creator><creator>Konstantinov, Andrei O.</creator><creator>Zaring, Carina</creator><creator>Domeij, Martin</creator><general>Trans Tech Publications Ltd</general><scope>AAYXX</scope><scope>CITATION</scope><scope>7SR</scope><scope>8BQ</scope><scope>8FD</scope><scope>JG9</scope><scope>ADTPV</scope><scope>BNKNJ</scope><scope>D8V</scope></search><sort><creationdate>20100101</creationdate><title>Operation of Silicon Carbide BJTs Free from Bipolar Degradation</title><author>Östling, Mikael ; Gumaelius, Krister ; Keri, Imre ; Reimark, Mats ; Svedberg, Jan Olov ; Konstantinov, Andrei O. ; Zaring, Carina ; Domeij, Martin</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c412t-9af43d5355841f65cbb71b03f71b4da1f705bff3fa0822cc238a5f5217ae84f23</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>2010</creationdate><topic>bipolar degradation</topic><topic>BJT</topic><topic>BPD</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Östling, Mikael</creatorcontrib><creatorcontrib>Gumaelius, Krister</creatorcontrib><creatorcontrib>Keri, Imre</creatorcontrib><creatorcontrib>Reimark, Mats</creatorcontrib><creatorcontrib>Svedberg, Jan Olov</creatorcontrib><creatorcontrib>Konstantinov, Andrei O.</creatorcontrib><creatorcontrib>Zaring, Carina</creatorcontrib><creatorcontrib>Domeij, Martin</creatorcontrib><collection>CrossRef</collection><collection>Engineered Materials Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><collection>SwePub</collection><collection>SwePub Conference</collection><collection>SWEPUB Kungliga Tekniska Högskolan</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Östling, Mikael</au><au>Gumaelius, Krister</au><au>Keri, Imre</au><au>Reimark, Mats</au><au>Svedberg, Jan Olov</au><au>Konstantinov, Andrei O.</au><au>Zaring, Carina</au><au>Domeij, Martin</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>Operation of Silicon Carbide BJTs Free from Bipolar Degradation</atitle><btitle>Materials science forum</btitle><date>2010-01-01</date><risdate>2010</risdate><volume>645-648</volume><spage>1057</spage><epage>1060</epage><pages>1057-1060</pages><issn>0255-5476</issn><issn>1662-9752</issn><eissn>1662-9752</eissn><abstract>The mechanisms of bipolar degradation in silicon carbide BJTs are investigated and identified. Bipolar degradation occurs as result of stacking fault (SF) growth within the low-doped collector region. A stacking fault blocks vertical current transport through the collector, driving the defective region into saturation. This results in considerable drop of emitter current gain if the BJT is run at a reasonably low collector-emitter bias. The base region does not play any significant role in bipolar degradation. Long-term stress tests have shown full stability of large-area high-power BJTs under minority carrier injection conditions provided the devices are fabricated using low Basal Plane Dislocation (BPD) material. However, an approximately 20% current gain compression is observed for the first 30-60 hours of burn-in under common emitter operation, which is related to instability of surface recombination in the passive base region.</abstract><pub>Trans Tech Publications Ltd</pub><doi>10.4028/www.scientific.net/MSF.645-648.1057</doi><tpages>4</tpages></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 0255-5476 |
| ispartof | Materials science forum, 2010, Vol.645-648, p.1057-1060 |
| issn | 0255-5476 1662-9752 1662-9752 |
| language | eng |
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| source | Scientific.net Journals |
| subjects | bipolar degradation BJT BPD |
| title | Operation of Silicon Carbide BJTs Free from Bipolar Degradation |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-21T02%3A39%3A51IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_swepu&rft_val_fmt=info:ofi/fmt:kev:mtx:book&rft.genre=proceeding&rft.atitle=Operation%20of%20Silicon%20Carbide%20BJTs%20Free%20from%20Bipolar%20Degradation&rft.btitle=Materials%20science%20forum&rft.au=%C3%96stling,%20Mikael&rft.date=2010-01-01&rft.volume=645-648&rft.spage=1057&rft.epage=1060&rft.pages=1057-1060&rft.issn=0255-5476&rft.eissn=1662-9752&rft_id=info:doi/10.4028/www.scientific.net/MSF.645-648.1057&rft_dat=%3Cproquest_swepu%3E743727026%3C/proquest_swepu%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=743727026&rft_id=info:pmid/&rfr_iscdi=true |