Nitridation of the SiO2/SiC Interface by N+ Implantation: Hall versus Field Effect Mobility in n-Channel Planar 4H-SiC MOSFETs

In this paper the electrical and structural characteristics of n-MOSFETs fabricated on 4H SiC with a process based on nitrogen (N) implantation in the channel region before the growth of the gate oxide are reported for low (5x1018 cm-3) and high (6x1019 cm-3) N concentration at the SiO2/SiC interfac...

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Veröffentlicht in:	Materials science forum 2010-04, Vol.645-648, p.491-494
Hauptverfasser:	Belsito, Luca, Solmi, Sandro, Poggi, Antonella, Armigliato, Aldo, Moscatelli, Francesco, Nipoti, Roberta
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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