A Low-Power Linear SiGe BiCMOS Low-Noise Amplifier for Millimeter-Wave Active Imaging

This letter presents a low-power linear and wideband two-stage millimeter-wave low-noise amplifier (LNA) fabricated in a low-cost 0.18 ¿m SiGe BiCMOS technology. Design techniques utilized to optimize the gain and NF and to achieve high linearity and wideband at W-band are addressed. The LNA achieve...

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Veröffentlicht in:	IEEE microwave and wireless components letters 2010-02, Vol.20 (2), p.103-105
Hauptverfasser:	Chen, A.Y.-K., Baeyens, Y., Young-Kai Chen, Jenshan Lin
Format:	Artikel
Sprache:	eng
Schlagworte:	Amplifiers Applied sciences Automotive radar BiCMOS integrated circuits Circuit properties Compressing Design optimization Electric, optical and optoelectronic circuits Electronic circuits Electronics Exact sciences and technology Gain Germanium silicon alloys Linearity low-noise amplifier (LNA) Low-noise amplifiers Microwave circuits, microwave integrated circuits, microwave transmission lines, submillimeter wave circuits Microwaves Millimeter wave technology millimeter-wave (mm-wave) Noise levels Noise measurement Power consumption SiGe BiCMOS Silicon germanides Silicon germanium W-band Wideband
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