A Low-Power Linear SiGe BiCMOS Low-Noise Amplifier for Millimeter-Wave Active Imaging
This letter presents a low-power linear and wideband two-stage millimeter-wave low-noise amplifier (LNA) fabricated in a low-cost 0.18 ¿m SiGe BiCMOS technology. Design techniques utilized to optimize the gain and NF and to achieve high linearity and wideband at W-band are addressed. The LNA achieve...
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| Veröffentlicht in: | IEEE microwave and wireless components letters 2010-02, Vol.20 (2), p.103-105 |
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| container_title | IEEE microwave and wireless components letters |
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| creator | Chen, A.Y.-K. Baeyens, Y. Young-Kai Chen Jenshan Lin |
| description | This letter presents a low-power linear and wideband two-stage millimeter-wave low-noise amplifier (LNA) fabricated in a low-cost 0.18 ¿m SiGe BiCMOS technology. Design techniques utilized to optimize the gain and NF and to achieve high linearity and wideband at W-band are addressed. The LNA achieves a peak power gain of 14.5 dB at 77 GHz with a 3 dB bandwidth of 14.5 GHz from 69 to 83.5 GHz. The measured NF is 6.9 dB at 77 GHz and is lower than 8 dB from 64 to 81 GHz. Both input and output return losses are better than 11 dB and 17 dB at 77 GHz, respectively. The measured input 1 dB compression point is -11.4 dBm at 77 GHz with low power consumption of only 37 mW. |
| doi_str_mv | 10.1109/LMWC.2009.2038528 |
| format | Article |
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Design techniques utilized to optimize the gain and NF and to achieve high linearity and wideband at W-band are addressed. The LNA achieves a peak power gain of 14.5 dB at 77 GHz with a 3 dB bandwidth of 14.5 GHz from 69 to 83.5 GHz. The measured NF is 6.9 dB at 77 GHz and is lower than 8 dB from 64 to 81 GHz. Both input and output return losses are better than 11 dB and 17 dB at 77 GHz, respectively. The measured input 1 dB compression point is -11.4 dBm at 77 GHz with low power consumption of only 37 mW.</description><identifier>ISSN: 1531-1309</identifier><identifier>ISSN: 2771-957X</identifier><identifier>EISSN: 1558-1764</identifier><identifier>EISSN: 2771-9588</identifier><identifier>DOI: 10.1109/LMWC.2009.2038528</identifier><identifier>CODEN: IMWCBJ</identifier><language>eng</language><publisher>New York, NY: IEEE</publisher><subject>Amplifiers ; Applied sciences ; Automotive radar ; BiCMOS integrated circuits ; Circuit properties ; Compressing ; Design optimization ; Electric, optical and optoelectronic circuits ; Electronic circuits ; Electronics ; Exact sciences and technology ; Gain ; Germanium silicon alloys ; Linearity ; low-noise amplifier (LNA) ; Low-noise amplifiers ; Microwave circuits, microwave integrated circuits, microwave transmission lines, submillimeter wave circuits ; Microwaves ; Millimeter wave technology ; millimeter-wave (mm-wave) ; Noise levels ; Noise measurement ; Power consumption ; SiGe BiCMOS ; Silicon germanides ; Silicon germanium ; W-band ; Wideband</subject><ispartof>IEEE microwave and wireless components letters, 2010-02, Vol.20 (2), p.103-105</ispartof><rights>2015 INIST-CNRS</rights><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) Feb 2010</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c386t-5f5bd48702bb0fa95562ba368fe868f3606d108898df9a82e33cdf538f198fbd3</citedby><cites>FETCH-LOGICAL-c386t-5f5bd48702bb0fa95562ba368fe868f3606d108898df9a82e33cdf538f198fbd3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/5392991$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>315,781,785,797,27928,27929,54762</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/5392991$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=22446818$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Chen, A.Y.-K.</creatorcontrib><creatorcontrib>Baeyens, Y.</creatorcontrib><creatorcontrib>Young-Kai Chen</creatorcontrib><creatorcontrib>Jenshan Lin</creatorcontrib><title>A Low-Power Linear SiGe BiCMOS Low-Noise Amplifier for Millimeter-Wave Active Imaging</title><title>IEEE microwave and wireless components letters</title><addtitle>LMWC</addtitle><description>This letter presents a low-power linear and wideband two-stage millimeter-wave low-noise amplifier (LNA) fabricated in a low-cost 0.18 ¿m SiGe BiCMOS technology. Design techniques utilized to optimize the gain and NF and to achieve high linearity and wideband at W-band are addressed. The LNA achieves a peak power gain of 14.5 dB at 77 GHz with a 3 dB bandwidth of 14.5 GHz from 69 to 83.5 GHz. The measured NF is 6.9 dB at 77 GHz and is lower than 8 dB from 64 to 81 GHz. Both input and output return losses are better than 11 dB and 17 dB at 77 GHz, respectively. The measured input 1 dB compression point is -11.4 dBm at 77 GHz with low power consumption of only 37 mW.</description><subject>Amplifiers</subject><subject>Applied sciences</subject><subject>Automotive radar</subject><subject>BiCMOS integrated circuits</subject><subject>Circuit properties</subject><subject>Compressing</subject><subject>Design optimization</subject><subject>Electric, optical and optoelectronic circuits</subject><subject>Electronic circuits</subject><subject>Electronics</subject><subject>Exact sciences and technology</subject><subject>Gain</subject><subject>Germanium silicon alloys</subject><subject>Linearity</subject><subject>low-noise amplifier (LNA)</subject><subject>Low-noise amplifiers</subject><subject>Microwave circuits, microwave integrated circuits, microwave transmission lines, submillimeter wave circuits</subject><subject>Microwaves</subject><subject>Millimeter wave technology</subject><subject>millimeter-wave (mm-wave)</subject><subject>Noise levels</subject><subject>Noise measurement</subject><subject>Power consumption</subject><subject>SiGe BiCMOS</subject><subject>Silicon germanides</subject><subject>Silicon germanium</subject><subject>W-band</subject><subject>Wideband</subject><issn>1531-1309</issn><issn>2771-957X</issn><issn>1558-1764</issn><issn>2771-9588</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2010</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNqFkUlLxEAQhYMouP4A8RIE8RTt6i3Vx3Fwg4wKKh6bTtItLVnG7hnFf2_iDB68eHlV8L56ULwkOQRyBkDUeTF7mZ5RQtQgDAXFjWQHhMAMcsk3x51BBoyo7WQ3xjdCgCOHneR5khb9Z_bQf9qQFr6zJqSP_tqmF346u3_8Me96H206aeeNd37AXB_SmW8a39qFDdmL-RjcauGHcduaV9-97idbzjTRHqznXvJ8dfk0vcmK--vb6aTIKoZykQknyppjTmhZEmeUEJKWhkl0FgdhksgaCKLC2imD1DJW1U4wdKDQlTXbS05XufPQvy9tXOjWx8o2jelsv4wac0E4cCn-JXPOpAKaj-TxH_KtX4ZueEOjkJIQluMAwQqqQh9jsE7Pg29N-NJA9FiIHgvRYyF6Xchwc7IONrEyjQumq3z8PaSUc4kwckcrzltrf23BFFUK2Dfn2ZEb</recordid><startdate>20100201</startdate><enddate>20100201</enddate><creator>Chen, A.Y.-K.</creator><creator>Baeyens, Y.</creator><creator>Young-Kai Chen</creator><creator>Jenshan Lin</creator><general>IEEE</general><general>Institute of Electrical and Electronics Engineers</general><general>The Institute of Electrical and Electronics Engineers, Inc. (IEEE)</general><scope>97E</scope><scope>RIA</scope><scope>RIE</scope><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>8FD</scope><scope>L7M</scope><scope>F28</scope><scope>FR3</scope></search><sort><creationdate>20100201</creationdate><title>A Low-Power Linear SiGe BiCMOS Low-Noise Amplifier for Millimeter-Wave Active Imaging</title><author>Chen, A.Y.-K. ; Baeyens, Y. ; Young-Kai Chen ; Jenshan Lin</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c386t-5f5bd48702bb0fa95562ba368fe868f3606d108898df9a82e33cdf538f198fbd3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2010</creationdate><topic>Amplifiers</topic><topic>Applied sciences</topic><topic>Automotive radar</topic><topic>BiCMOS integrated circuits</topic><topic>Circuit properties</topic><topic>Compressing</topic><topic>Design optimization</topic><topic>Electric, optical and optoelectronic circuits</topic><topic>Electronic circuits</topic><topic>Electronics</topic><topic>Exact sciences and technology</topic><topic>Gain</topic><topic>Germanium silicon alloys</topic><topic>Linearity</topic><topic>low-noise amplifier (LNA)</topic><topic>Low-noise amplifiers</topic><topic>Microwave circuits, microwave integrated circuits, microwave transmission lines, submillimeter wave circuits</topic><topic>Microwaves</topic><topic>Millimeter wave technology</topic><topic>millimeter-wave (mm-wave)</topic><topic>Noise levels</topic><topic>Noise measurement</topic><topic>Power consumption</topic><topic>SiGe BiCMOS</topic><topic>Silicon germanides</topic><topic>Silicon germanium</topic><topic>W-band</topic><topic>Wideband</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Chen, A.Y.-K.</creatorcontrib><creatorcontrib>Baeyens, Y.</creatorcontrib><creatorcontrib>Young-Kai Chen</creatorcontrib><creatorcontrib>Jenshan Lin</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 2005-present</collection><collection>IEEE All-Society Periodicals Package (ASPP) 1998-Present</collection><collection>IEEE Electronic Library (IEL)</collection><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>ANTE: Abstracts in New Technology & Engineering</collection><collection>Engineering Research Database</collection><jtitle>IEEE microwave and wireless components letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Chen, A.Y.-K.</au><au>Baeyens, Y.</au><au>Young-Kai Chen</au><au>Jenshan Lin</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>A Low-Power Linear SiGe BiCMOS Low-Noise Amplifier for Millimeter-Wave Active Imaging</atitle><jtitle>IEEE microwave and wireless components letters</jtitle><stitle>LMWC</stitle><date>2010-02-01</date><risdate>2010</risdate><volume>20</volume><issue>2</issue><spage>103</spage><epage>105</epage><pages>103-105</pages><issn>1531-1309</issn><issn>2771-957X</issn><eissn>1558-1764</eissn><eissn>2771-9588</eissn><coden>IMWCBJ</coden><abstract>This letter presents a low-power linear and wideband two-stage millimeter-wave low-noise amplifier (LNA) fabricated in a low-cost 0.18 ¿m SiGe BiCMOS technology. Design techniques utilized to optimize the gain and NF and to achieve high linearity and wideband at W-band are addressed. The LNA achieves a peak power gain of 14.5 dB at 77 GHz with a 3 dB bandwidth of 14.5 GHz from 69 to 83.5 GHz. The measured NF is 6.9 dB at 77 GHz and is lower than 8 dB from 64 to 81 GHz. Both input and output return losses are better than 11 dB and 17 dB at 77 GHz, respectively. The measured input 1 dB compression point is -11.4 dBm at 77 GHz with low power consumption of only 37 mW.</abstract><cop>New York, NY</cop><pub>IEEE</pub><doi>10.1109/LMWC.2009.2038528</doi><tpages>3</tpages></addata></record> |
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| identifier | ISSN: 1531-1309 |
| ispartof | IEEE microwave and wireless components letters, 2010-02, Vol.20 (2), p.103-105 |
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| language | eng |
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| source | IEEE Electronic Library (IEL) |
| subjects | Amplifiers Applied sciences Automotive radar BiCMOS integrated circuits Circuit properties Compressing Design optimization Electric, optical and optoelectronic circuits Electronic circuits Electronics Exact sciences and technology Gain Germanium silicon alloys Linearity low-noise amplifier (LNA) Low-noise amplifiers Microwave circuits, microwave integrated circuits, microwave transmission lines, submillimeter wave circuits Microwaves Millimeter wave technology millimeter-wave (mm-wave) Noise levels Noise measurement Power consumption SiGe BiCMOS Silicon germanides Silicon germanium W-band Wideband |
| title | A Low-Power Linear SiGe BiCMOS Low-Noise Amplifier for Millimeter-Wave Active Imaging |
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