Electromigration Reliability of the Contact Hole in SiC Power Devices Operated at Higher Junction Temperatures

It is strongly desired to operate SiC power devices at higher junction temperatures (Tj), but that often entails problems because they contain a variety of materials with thermal activity or weakness. An example of such troubles is the steep increase in resistance of the Al electrode in the source (...

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Veröffentlicht in:	Materials science forum 2010-04, Vol.645-648, p.1139-1142
Hauptverfasser:	Tanimoto, Satoshi, Ohashi, Hiromichi, Nishio, Naoki, Yamaguchi, Hiroshi, Okumura, Hajime, Suzuki, Tatsuhiro, Murakami, Yoshinori
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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