Low-Pressure Fast Growth and Characterization of 4H-SiC Epilayers

Low-Pressure Fast Growth and Characterization of 4H-SiC Epilayers

Fast and thick 4H-SiC epitaxial growth is demonstrated in a vertical-type reactor under a low system pressure within the range 13-40 mbar. A very fast growth rate of up to 250 m/h is obtained. The material quality of the epilayers grown in the reactor is evaluated by low-temperature photoluminescen...

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Veröffentlicht in:Materials science forum 2010-04, Vol.645-648, p.77-82
Hauptverfasser: Hoshino, Norihiro, Ito, Masahiko, Miyazawa, Tetsuya, Tsuchida, Hidekazu, Nagano, Masahiro, Kamata, Isaho
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container_title Materials science forum
container_volume 645-648
creator Hoshino, Norihiro
Ito, Masahiko
Miyazawa, Tetsuya
Tsuchida, Hidekazu
Nagano, Masahiro
Kamata, Isaho
description Fast and thick 4H-SiC epitaxial growth is demonstrated in a vertical-type reactor under a low system pressure within the range 13-40 mbar. A very fast growth rate of up to 250 m/h is obtained. The material quality of the epilayers grown in the reactor is evaluated by low-temperature photoluminescence, deep level transient spectroscopy, microwave photoconductive decay, synchrotron topography and room temperature PL imaging. The carrier lifetime of thick epilayers with or without the application of the C+-implantation/annealing method and extended defects in the epilayers grown on 8º and 4º off substrates are discussed.
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