Low Doped 3C-SiC Layers Deposited by the Vapour-Liquid-Solid Mechanism on 6H-SiC Substrates

Low Doped 3C-SiC Layers Deposited by the Vapour-Liquid-Solid Mechanism on 6H-SiC Substrates

We report the results of a systematic investigation performed to reduce the residual n-type doping level of the 3C-SiC layers grown by the VLS mechanism on 6H-SiC(0001) on-axis substrate. This new approach, termed “High purity VLS” leads to low doped and low compensated material, which was confirmed...

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Hauptverfasser: Lorenzzi, Jean, Cauwet, François, Ferro, Gabriel, Kim-Hak, Olivier, Jegenyes, Nikoletta, Carole, Davy, Zoulis, Georgios, Camassel, Jean, Juillaguet, Sandrine
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Chemical Sciences
Cristallography
Material chemistry
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container_start_page 171
container_title
container_volume 645-648
creator Lorenzzi, Jean
Cauwet, François
Ferro, Gabriel
Kim-Hak, Olivier
Jegenyes, Nikoletta
Carole, Davy
Zoulis, Georgios
Camassel, Jean
Juillaguet, Sandrine
description We report the results of a systematic investigation performed to reduce the residual n-type doping level of the 3C-SiC layers grown by the VLS mechanism on 6H-SiC(0001) on-axis substrate. This new approach, termed “High purity VLS” leads to low doped and low compensated material, which was confirmed by Raman and Low Temperature Photoluminescence spectroscopy. The resultant 3C morphology remains typical of single-domain layers and the n-type doping level could be estimated around 6x1016 cm-3.
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Material chemistry
title Low Doped 3C-SiC Layers Deposited by the Vapour-Liquid-Solid Mechanism on 6H-SiC Substrates
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