Electronic Properties of Femtosecond Laser Induced Modified Spots on Single Crystal Silicon Carbide

Femtosecond (fs) laser modification on single crystal silicon carbide (SiC) was studied from the viewpoints of electric conductivity. Fourier transform infrared (FTIR) spectroscopy was carried out on femtosecond laser modified area. The intensity decrease of reststrahlen band due to the modification...

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Veröffentlicht in:	Materials science forum 2010-01, Vol.645-648, p.239-242
Hauptverfasser:	Hashimoto, Shuichi, Yamamoto, M., Tomita, Takuro, Sakai, K., Isu, T., Matsuo, Shigeki, Saito, S., Onoda, Shinobu, Kitada, T., Iwami, M., Nakagawa, Y., Deki, M., Ohshima, Takeshi
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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