Free Standing AlN Single Crystal Grown on Pre-Patterned and In Situ Patterned 4H-SiC Substrates

Free standing AlN wafers were grown on pre-patterned and in situ patterned 4H-SiC substrates by a physical vapor transport method. It is based on the coalescence of AlN microrods, which evolve from the apex of SiC pyramids grown on the SiC substrate during a temperature ramp up for in situ patterned...

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Veröffentlicht in:	Materials science forum 2010-04, Vol.645-648, p.1187-1190
Hauptverfasser:	Syväjärvi, Mikael, Nikitina, Irina P., Córdoba, José M., Odén, Magnus, Yazdi, Gholam Reza, Vassilevski, Konstantin, Yakimova, Rositza, Gogova, Daniela, Wright, Nicolas G.
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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