Effect of Temperature and Al Concentration on the Electrical Performance of GaN and Al0.2Ga0.8N Accumulation-Mode FET Devices

Effect of Temperature and Al Concentration on the Electrical Performance of GaN and Al0.2Ga0.8N Accumulation-Mode FET Devices

Field-effect transistors were fabricated on GaN and Al0.2Ga0.8N epitaxial layers grown by metal organic chemical vapor deposition (MOCVD) on sapphire substrates. The threshold voltage VTH was higher when AlGaN was used as an active layer. VTH also increased with temperature due to the increased posi...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:Materials science forum 2010-01, Vol.645-648, p.1215-1218
Hauptverfasser: Mastro, Michael E., Eddy, Charles R., Anderson, Travis J., Tadjer, Marko J., Hobart, Karl D., Hite, Jennifer K., Kub, Fritz J., Imhoff, Eugene A.
Format: Artikel
Sprache:eng
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
container_end_page 1218
container_issue
container_start_page 1215
container_title Materials science forum
container_volume 645-648
creator Mastro, Michael E.
Eddy, Charles R.
Anderson, Travis J.
Tadjer, Marko J.
Hobart, Karl D.
Hite, Jennifer K.
Kub, Fritz J.
Imhoff, Eugene A.
description Field-effect transistors were fabricated on GaN and Al0.2Ga0.8N epitaxial layers grown by metal organic chemical vapor deposition (MOCVD) on sapphire substrates. The threshold voltage VTH was higher when AlGaN was used as an active layer. VTH also increased with temperature due to the increased positive polarization charge at the GaN/AlN buffer/sapphire interfaces. Drain current increased at high temperatures even with more positive threshold voltage, which makes GaN-based FET devices attractive for high temperature operation.
doi_str_mv 10.4028/www.scientific.net/MSF.645-648.1215
format Article
fullrecord <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_proquest_miscellaneous_743667875</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>743667875</sourcerecordid><originalsourceid>FETCH-LOGICAL-c309t-5858f436078f6e56a5d64e695e21512ba58b6ad23eabc139936f6ec202aa7bac3</originalsourceid><addsrcrecordid>eNqVkE1LxDAQhoMouH78h9w8SGuSNml6XNZ1FfwC9Ryy2QlW2mZNWhcP_ndnXcGzkCGQeecJ8xByzlleMqEvNptNnlwD_dD4xuU9DBd3T1e5KmWmSp1zweUemXClRFZXUuyTCRNSZrKs1CE5SumNsYJrribka-49uIEGT5-hW0O0wxiB2n5Fpy2dhd7hJ_jYhJ7iGV6BzlsciI2zLX2E6EPsLKa2hIW9_51kuVhYlut7OnVu7Mb2h5DdhRXQq_kzvYSPxkE6IQfetglOf-9j8oLd2XV2-7C4mU1vM1ewesikltqXhWKV9gqksnKlSlC1BFyUi6WVeqnsShRgl44XdV0ozDnBhLXV0rrimJztuOsY3kdIg-ma5KBtbQ9hTKZCuKp0JTE52yVdDClF8GYdm87GT8OZ2bo36N78uTfo3qB7g-6xtNm6R8p8R0F1fRrAvZq3MMYed_wX5xtJ7Zdh</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>743667875</pqid></control><display><type>article</type><title>Effect of Temperature and Al Concentration on the Electrical Performance of GaN and Al0.2Ga0.8N Accumulation-Mode FET Devices</title><source>Scientific.net Journals</source><creator>Mastro, Michael E. ; Eddy, Charles R. ; Anderson, Travis J. ; Tadjer, Marko J. ; Hobart, Karl D. ; Hite, Jennifer K. ; Kub, Fritz J. ; Imhoff, Eugene A.</creator><creatorcontrib>Mastro, Michael E. ; Eddy, Charles R. ; Anderson, Travis J. ; Tadjer, Marko J. ; Hobart, Karl D. ; Hite, Jennifer K. ; Kub, Fritz J. ; Imhoff, Eugene A.</creatorcontrib><description>Field-effect transistors were fabricated on GaN and Al0.2Ga0.8N epitaxial layers grown by metal organic chemical vapor deposition (MOCVD) on sapphire substrates. The threshold voltage VTH was higher when AlGaN was used as an active layer. VTH also increased with temperature due to the increased positive polarization charge at the GaN/AlN buffer/sapphire interfaces. Drain current increased at high temperatures even with more positive threshold voltage, which makes GaN-based FET devices attractive for high temperature operation.</description><identifier>ISSN: 0255-5476</identifier><identifier>ISSN: 1662-9752</identifier><identifier>EISSN: 1662-9752</identifier><identifier>DOI: 10.4028/www.scientific.net/MSF.645-648.1215</identifier><language>eng</language><publisher>Trans Tech Publications Ltd</publisher><ispartof>Materials science forum, 2010-01, Vol.645-648, p.1215-1218</ispartof><rights>2010 Trans Tech Publications Ltd</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><cites>FETCH-LOGICAL-c309t-5858f436078f6e56a5d64e695e21512ba58b6ad23eabc139936f6ec202aa7bac3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Uhttps://www.scientific.net/Image/TitleCover/907?width=600</thumbnail><link.rule.ids>314,780,784,27924,27925</link.rule.ids></links><search><creatorcontrib>Mastro, Michael E.</creatorcontrib><creatorcontrib>Eddy, Charles R.</creatorcontrib><creatorcontrib>Anderson, Travis J.</creatorcontrib><creatorcontrib>Tadjer, Marko J.</creatorcontrib><creatorcontrib>Hobart, Karl D.</creatorcontrib><creatorcontrib>Hite, Jennifer K.</creatorcontrib><creatorcontrib>Kub, Fritz J.</creatorcontrib><creatorcontrib>Imhoff, Eugene A.</creatorcontrib><title>Effect of Temperature and Al Concentration on the Electrical Performance of GaN and Al0.2Ga0.8N Accumulation-Mode FET Devices</title><title>Materials science forum</title><description>Field-effect transistors were fabricated on GaN and Al0.2Ga0.8N epitaxial layers grown by metal organic chemical vapor deposition (MOCVD) on sapphire substrates. The threshold voltage VTH was higher when AlGaN was used as an active layer. VTH also increased with temperature due to the increased positive polarization charge at the GaN/AlN buffer/sapphire interfaces. Drain current increased at high temperatures even with more positive threshold voltage, which makes GaN-based FET devices attractive for high temperature operation.</description><issn>0255-5476</issn><issn>1662-9752</issn><issn>1662-9752</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2010</creationdate><recordtype>article</recordtype><recordid>eNqVkE1LxDAQhoMouH78h9w8SGuSNml6XNZ1FfwC9Ryy2QlW2mZNWhcP_ndnXcGzkCGQeecJ8xByzlleMqEvNptNnlwD_dD4xuU9DBd3T1e5KmWmSp1zweUemXClRFZXUuyTCRNSZrKs1CE5SumNsYJrribka-49uIEGT5-hW0O0wxiB2n5Fpy2dhd7hJ_jYhJ7iGV6BzlsciI2zLX2E6EPsLKa2hIW9_51kuVhYlut7OnVu7Mb2h5DdhRXQq_kzvYSPxkE6IQfetglOf-9j8oLd2XV2-7C4mU1vM1ewesikltqXhWKV9gqksnKlSlC1BFyUi6WVeqnsShRgl44XdV0ozDnBhLXV0rrimJztuOsY3kdIg-ma5KBtbQ9hTKZCuKp0JTE52yVdDClF8GYdm87GT8OZ2bo36N78uTfo3qB7g-6xtNm6R8p8R0F1fRrAvZq3MMYed_wX5xtJ7Zdh</recordid><startdate>20100101</startdate><enddate>20100101</enddate><creator>Mastro, Michael E.</creator><creator>Eddy, Charles R.</creator><creator>Anderson, Travis J.</creator><creator>Tadjer, Marko J.</creator><creator>Hobart, Karl D.</creator><creator>Hite, Jennifer K.</creator><creator>Kub, Fritz J.</creator><creator>Imhoff, Eugene A.</creator><general>Trans Tech Publications Ltd</general><scope>AAYXX</scope><scope>CITATION</scope><scope>7QF</scope><scope>7QQ</scope><scope>7SR</scope><scope>8BQ</scope><scope>8FD</scope><scope>JG9</scope></search><sort><creationdate>20100101</creationdate><title>Effect of Temperature and Al Concentration on the Electrical Performance of GaN and Al0.2Ga0.8N Accumulation-Mode FET Devices</title><author>Mastro, Michael E. ; Eddy, Charles R. ; Anderson, Travis J. ; Tadjer, Marko J. ; Hobart, Karl D. ; Hite, Jennifer K. ; Kub, Fritz J. ; Imhoff, Eugene A.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c309t-5858f436078f6e56a5d64e695e21512ba58b6ad23eabc139936f6ec202aa7bac3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2010</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Mastro, Michael E.</creatorcontrib><creatorcontrib>Eddy, Charles R.</creatorcontrib><creatorcontrib>Anderson, Travis J.</creatorcontrib><creatorcontrib>Tadjer, Marko J.</creatorcontrib><creatorcontrib>Hobart, Karl D.</creatorcontrib><creatorcontrib>Hite, Jennifer K.</creatorcontrib><creatorcontrib>Kub, Fritz J.</creatorcontrib><creatorcontrib>Imhoff, Eugene A.</creatorcontrib><collection>CrossRef</collection><collection>Aluminium Industry Abstracts</collection><collection>Ceramic Abstracts</collection><collection>Engineered Materials Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><jtitle>Materials science forum</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Mastro, Michael E.</au><au>Eddy, Charles R.</au><au>Anderson, Travis J.</au><au>Tadjer, Marko J.</au><au>Hobart, Karl D.</au><au>Hite, Jennifer K.</au><au>Kub, Fritz J.</au><au>Imhoff, Eugene A.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Effect of Temperature and Al Concentration on the Electrical Performance of GaN and Al0.2Ga0.8N Accumulation-Mode FET Devices</atitle><jtitle>Materials science forum</jtitle><date>2010-01-01</date><risdate>2010</risdate><volume>645-648</volume><spage>1215</spage><epage>1218</epage><pages>1215-1218</pages><issn>0255-5476</issn><issn>1662-9752</issn><eissn>1662-9752</eissn><abstract>Field-effect transistors were fabricated on GaN and Al0.2Ga0.8N epitaxial layers grown by metal organic chemical vapor deposition (MOCVD) on sapphire substrates. The threshold voltage VTH was higher when AlGaN was used as an active layer. VTH also increased with temperature due to the increased positive polarization charge at the GaN/AlN buffer/sapphire interfaces. Drain current increased at high temperatures even with more positive threshold voltage, which makes GaN-based FET devices attractive for high temperature operation.</abstract><pub>Trans Tech Publications Ltd</pub><doi>10.4028/www.scientific.net/MSF.645-648.1215</doi><tpages>4</tpages></addata></record>
fulltext fulltext
identifier ISSN: 0255-5476
ispartof Materials science forum, 2010-01, Vol.645-648, p.1215-1218
issn 0255-5476
1662-9752
1662-9752
language eng
recordid cdi_proquest_miscellaneous_743667875
source Scientific.net Journals
title Effect of Temperature and Al Concentration on the Electrical Performance of GaN and Al0.2Ga0.8N Accumulation-Mode FET Devices
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-07T19%3A34%3A13IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Effect%20of%20Temperature%20and%20Al%20Concentration%20on%20the%20Electrical%20Performance%20of%20GaN%20and%20Al0.2Ga0.8N%20Accumulation-Mode%20FET%20Devices&rft.jtitle=Materials%20science%20forum&rft.au=Mastro,%20Michael%20E.&rft.date=2010-01-01&rft.volume=645-648&rft.spage=1215&rft.epage=1218&rft.pages=1215-1218&rft.issn=0255-5476&rft.eissn=1662-9752&rft_id=info:doi/10.4028/www.scientific.net/MSF.645-648.1215&rft_dat=%3Cproquest_cross%3E743667875%3C/proquest_cross%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=743667875&rft_id=info:pmid/&rfr_iscdi=true