Fullerene Sensitized Silicon for Near- to Mid-Infrared Light Detection

A novel light‐sensing scheme based on a silicon/fullerene‐derivative heterojunction allows optoelectronic detection in the near‐ to mid‐infrared (IR), which is fully compatible with complementary metal oxide semiconductor (CMOS) technology. Although silicon and the fullerene derivative do not absorb in the IR, a heterojunction of these materials absorbs and generates a photocurrent (PC) in the near‐ to mid‐IR, presumably caused by an interfacial absorption mechanism.