Discussion of Turn on Current Peaks of SiC Switches in Half Bridges

Discussion of Turn on Current Peaks of SiC Switches in Half Bridges

The optimal control parameters for semiconductor switches at the development state with new materials and structures are often unidentified. By using those sample switches with a gate control set by investigating one switch only, parasitic influences might lead to increased switching losses in half...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:Materials science forum 2010-01, Vol.645-648, p.1177-1180
Hauptverfasser: Koch, Immo, Canders, Wolf Rüdiger
Format: Artikel
Sprache:eng
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
container_end_page 1180
container_issue
container_start_page 1177
container_title Materials science forum
container_volume 645-648
creator Koch, Immo
Canders, Wolf Rüdiger
description The optimal control parameters for semiconductor switches at the development state with new materials and structures are often unidentified. By using those sample switches with a gate control set by investigating one switch only, parasitic influences might lead to increased switching losses in half bridges [1, 2]. The focus of this paper is on an effect at turn on by using for example normally on JFET as high and low side switch. At this an increased current peak might occur which leads to higher switching losses. By adjusting the gate voltage losses can be economized.
doi_str_mv 10.4028/www.scientific.net/MSF.645-648.1177
format Article
fullrecord <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_proquest_miscellaneous_743659617</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>743659617</sourcerecordid><originalsourceid>FETCH-LOGICAL-c309t-b4bc66da858cea375bd8b8db443e7126241778108796d40713d135bcaff940b73</originalsourceid><addsrcrecordid>eNqVkF1LwzAUhoMoOKf_IXdeSLuk-eyl1s0JE4XN65Cmqcvc2pm0FP-9KRO89uLwXpyXh3MeAO4wSinK5GwYhjQYZ5vO1c6kje1mL-tFyilLOJUpxkKcgQnmPEtywbJzMEEZYwmjgl-CqxB2CBEsMZ-A4tEF04fg2ga2Ndz0PmYDi977SIdvVn-GcbF2BVwPrjNbG6Br4FLva_jgXfVhwzW4qPU-2JvfnIL3xXxTLJPV69Nzcb9KDEF5l5S0NJxXWjJprCaClZUsZVVSSqzAGc9oPFtiJEXOK4oEJhUmrDS6rnOKSkGm4PbEPfr2q7ehU4d4vN3vdWPbPihBCWc5x2OzODWNb0PwtlZH7w7afyuM1GhQRYPqz6CKBlU0qKLBOFKNBiNlfqJ0Xjehs2ardm0UFH_8F-cHwDODUQ</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>743659617</pqid></control><display><type>article</type><title>Discussion of Turn on Current Peaks of SiC Switches in Half Bridges</title><source>Scientific.net Journals</source><creator>Koch, Immo ; Canders, Wolf Rüdiger</creator><creatorcontrib>Koch, Immo ; Canders, Wolf Rüdiger</creatorcontrib><description>The optimal control parameters for semiconductor switches at the development state with new materials and structures are often unidentified. By using those sample switches with a gate control set by investigating one switch only, parasitic influences might lead to increased switching losses in half bridges [1, 2]. The focus of this paper is on an effect at turn on by using for example normally on JFET as high and low side switch. At this an increased current peak might occur which leads to higher switching losses. By adjusting the gate voltage losses can be economized.</description><identifier>ISSN: 0255-5476</identifier><identifier>ISSN: 1662-9752</identifier><identifier>EISSN: 1662-9752</identifier><identifier>DOI: 10.4028/www.scientific.net/MSF.645-648.1177</identifier><language>eng</language><publisher>Trans Tech Publications Ltd</publisher><ispartof>Materials science forum, 2010-01, Vol.645-648, p.1177-1180</ispartof><rights>2010 Trans Tech Publications Ltd</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><cites>FETCH-LOGICAL-c309t-b4bc66da858cea375bd8b8db443e7126241778108796d40713d135bcaff940b73</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Uhttps://www.scientific.net/Image/TitleCover/907?width=600</thumbnail><link.rule.ids>314,776,780,27901,27902</link.rule.ids></links><search><creatorcontrib>Koch, Immo</creatorcontrib><creatorcontrib>Canders, Wolf Rüdiger</creatorcontrib><title>Discussion of Turn on Current Peaks of SiC Switches in Half Bridges</title><title>Materials science forum</title><description>The optimal control parameters for semiconductor switches at the development state with new materials and structures are often unidentified. By using those sample switches with a gate control set by investigating one switch only, parasitic influences might lead to increased switching losses in half bridges [1, 2]. The focus of this paper is on an effect at turn on by using for example normally on JFET as high and low side switch. At this an increased current peak might occur which leads to higher switching losses. By adjusting the gate voltage losses can be economized.</description><issn>0255-5476</issn><issn>1662-9752</issn><issn>1662-9752</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2010</creationdate><recordtype>article</recordtype><recordid>eNqVkF1LwzAUhoMoOKf_IXdeSLuk-eyl1s0JE4XN65Cmqcvc2pm0FP-9KRO89uLwXpyXh3MeAO4wSinK5GwYhjQYZ5vO1c6kje1mL-tFyilLOJUpxkKcgQnmPEtywbJzMEEZYwmjgl-CqxB2CBEsMZ-A4tEF04fg2ga2Ndz0PmYDi977SIdvVn-GcbF2BVwPrjNbG6Br4FLva_jgXfVhwzW4qPU-2JvfnIL3xXxTLJPV69Nzcb9KDEF5l5S0NJxXWjJprCaClZUsZVVSSqzAGc9oPFtiJEXOK4oEJhUmrDS6rnOKSkGm4PbEPfr2q7ehU4d4vN3vdWPbPihBCWc5x2OzODWNb0PwtlZH7w7afyuM1GhQRYPqz6CKBlU0qKLBOFKNBiNlfqJ0Xjehs2ardm0UFH_8F-cHwDODUQ</recordid><startdate>20100101</startdate><enddate>20100101</enddate><creator>Koch, Immo</creator><creator>Canders, Wolf Rüdiger</creator><general>Trans Tech Publications Ltd</general><scope>AAYXX</scope><scope>CITATION</scope><scope>7SR</scope><scope>8BQ</scope><scope>8FD</scope><scope>JG9</scope></search><sort><creationdate>20100101</creationdate><title>Discussion of Turn on Current Peaks of SiC Switches in Half Bridges</title><author>Koch, Immo ; Canders, Wolf Rüdiger</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c309t-b4bc66da858cea375bd8b8db443e7126241778108796d40713d135bcaff940b73</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2010</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Koch, Immo</creatorcontrib><creatorcontrib>Canders, Wolf Rüdiger</creatorcontrib><collection>CrossRef</collection><collection>Engineered Materials Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><jtitle>Materials science forum</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Koch, Immo</au><au>Canders, Wolf Rüdiger</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Discussion of Turn on Current Peaks of SiC Switches in Half Bridges</atitle><jtitle>Materials science forum</jtitle><date>2010-01-01</date><risdate>2010</risdate><volume>645-648</volume><spage>1177</spage><epage>1180</epage><pages>1177-1180</pages><issn>0255-5476</issn><issn>1662-9752</issn><eissn>1662-9752</eissn><abstract>The optimal control parameters for semiconductor switches at the development state with new materials and structures are often unidentified. By using those sample switches with a gate control set by investigating one switch only, parasitic influences might lead to increased switching losses in half bridges [1, 2]. The focus of this paper is on an effect at turn on by using for example normally on JFET as high and low side switch. At this an increased current peak might occur which leads to higher switching losses. By adjusting the gate voltage losses can be economized.</abstract><pub>Trans Tech Publications Ltd</pub><doi>10.4028/www.scientific.net/MSF.645-648.1177</doi><tpages>4</tpages></addata></record>
fulltext fulltext
identifier ISSN: 0255-5476
ispartof Materials science forum, 2010-01, Vol.645-648, p.1177-1180
issn 0255-5476
1662-9752
1662-9752
language eng
recordid cdi_proquest_miscellaneous_743659617
source Scientific.net Journals
title Discussion of Turn on Current Peaks of SiC Switches in Half Bridges
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-29T23%3A03%3A43IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Discussion%20of%20Turn%20on%20Current%20Peaks%20of%20SiC%20Switches%20in%20Half%20Bridges&rft.jtitle=Materials%20science%20forum&rft.au=Koch,%20Immo&rft.date=2010-01-01&rft.volume=645-648&rft.spage=1177&rft.epage=1180&rft.pages=1177-1180&rft.issn=0255-5476&rft.eissn=1662-9752&rft_id=info:doi/10.4028/www.scientific.net/MSF.645-648.1177&rft_dat=%3Cproquest_cross%3E743659617%3C/proquest_cross%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=743659617&rft_id=info:pmid/&rfr_iscdi=true