A Capacitance Standard Based on Counting Electrons

A capacitance standard based directly on the definition of capacitance was built. Single-electron tunneling devices were used to place N electrons of charge e onto a cryogenic capacitor C, and the resulting voltage change ΔV was measured. Repeated measurements of C = Ne/ΔV with this method have a re...

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Veröffentlicht in:Science (American Association for the Advancement of Science) 1999-09, Vol.285 (5434), p.1706-1709
Hauptverfasser: Keller, Mark W., Eichenberger, Ali L., Martinis, John M., Zimmerman, Neil M.
Format: Artikel
Sprache:eng
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Zusammenfassung:A capacitance standard based directly on the definition of capacitance was built. Single-electron tunneling devices were used to place N electrons of charge e onto a cryogenic capacitor C, and the resulting voltage change ΔV was measured. Repeated measurements of C = Ne/ΔV with this method have a relative standard deviation of 0.3 × 10$^{-6}$. This standard offers a natural basis for capacitance analogous to the Josephson effect for voltage and the quantum Hall effect for resistance.
ISSN:0036-8075
1095-9203
DOI:10.1126/science.285.5434.1706