A Capacitance Standard Based on Counting Electrons
A capacitance standard based directly on the definition of capacitance was built. Single-electron tunneling devices were used to place N electrons of charge e onto a cryogenic capacitor C, and the resulting voltage change ΔV was measured. Repeated measurements of C = Ne/ΔV with this method have a re...
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Veröffentlicht in: | Science (American Association for the Advancement of Science) 1999-09, Vol.285 (5434), p.1706-1709 |
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Hauptverfasser: | , , , |
Format: | Artikel |
Sprache: | eng |
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Online-Zugang: | Volltext |
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Zusammenfassung: | A capacitance standard based directly on the definition of capacitance was built. Single-electron tunneling devices were used to place N electrons of charge e onto a cryogenic capacitor C, and the resulting voltage change ΔV was measured. Repeated measurements of C = Ne/ΔV with this method have a relative standard deviation of 0.3 × 10$^{-6}$. This standard offers a natural basis for capacitance analogous to the Josephson effect for voltage and the quantum Hall effect for resistance. |
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ISSN: | 0036-8075 1095-9203 |
DOI: | 10.1126/science.285.5434.1706 |