Charge Collection Efficiency of 6H-SiC P+N Diodes Degraded by Low-Energy Electron Irradiation

Charge Collection Efficiency of 6H-SiC P+N Diodes Degraded by Low-Energy Electron Irradiation

The effect of electron irradiation on the charge collection efficiency of a 6H-SiC p+n diode has been studied. The diodes were irradiated with electrons of energies from 100 keV to 1 MeV. The charge collection efficiencies of the samples were measured for alpha particles before and after the electro...

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Veröffentlicht in:Materials science forum 2010-04, Vol.645-648, p.921-924
Hauptverfasser: Uchida, Kazuo, Onoda, Shinobu, Koizumi, Atsushi, Nozaki, Shinji, Kojima, Kazutoshi, Iwamoto, Naoya, Ohshima, Takeshi
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container_issue
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container_title Materials science forum
container_volume 645-648
creator Uchida, Kazuo
Onoda, Shinobu
Koizumi, Atsushi
Nozaki, Shinji
Kojima, Kazutoshi
Iwamoto, Naoya
Ohshima, Takeshi
description The effect of electron irradiation on the charge collection efficiency of a 6H-SiC p+n diode has been studied. The diodes were irradiated with electrons of energies from 100 keV to 1 MeV. The charge collection efficiencies of the samples were measured for alpha particles before and after the electron irradiation. The electron irradiation at 100 keV does not affect the charge collection efficiency, while the electron irradiation at 200 keV or higher decreases the charge collection efficiency. The degree of the degradation of the diodes correlates with the energy of the electron irradiation.
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