10 kV, 10 A Bipolar Junction Transistors and Darlington Transistors on 4H-SiC

4H-SiC Bipolar Junction Transistors (BJTs) and hybrid Darlington Transistors with 10 kV/10 A capability have been demonstrated for the first time. The SiC BJT (chip size: 0.75 cm2 with an active area of 0.336 cm2) conducts a collector current of 10 A (~ 30 A/cm2) with a forward voltage drop of 4.0 V...

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Veröffentlicht in:	Materials science forum 2010-04, Vol.645-648, p.1025-1028, Article 1025
Hauptverfasser:	Burk, Albert A., Scozzie, Charles, Zhang, Qing Chun Jon, Agarwal, Anant K., Palmour, John W., O'Loughlin, Michael J., Callanan, Robert
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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