The Dual GCT-A New High-Power Device Using Optimized GCT Technology
The performance of high-power inverters is determined strongly by the characteristics of the semiconductor devices. The design of suitable devices is always a compromise between on-state losses and switching losses. In this paper, a new device-the Dual Gate Commutated Thyristor (GCT)-is proposed tha...
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| Veröffentlicht in: | IEEE transactions on industry applications 2009-09, Vol.45 (5), p.1754-1762 |
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| container_issue | 5 |
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| container_title | IEEE transactions on industry applications |
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| creator | Kollensperger, P. Bragard, M. Plum, T. De Doncker, R.W. |
| description | The performance of high-power inverters is determined strongly by the characteristics of the semiconductor devices. The design of suitable devices is always a compromise between on-state losses and switching losses. In this paper, a new device-the Dual Gate Commutated Thyristor (GCT)-is proposed that combines the advantages of differently optimized GCTs and realizes low conduction and low switching losses in a single semiconductor device. The concept is introduced first, before the analytical design is presented. Next, finite-element-method simulations are employed to extend the investigation to devices that are not yet available. Measurements of a hybrid Dual GCT are added to verify the advantages of the concept. Finally, the results are discussed. |
| doi_str_mv | 10.1109/TIA.2009.2027364 |
| format | Article |
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The design of suitable devices is always a compromise between on-state losses and switching losses. In this paper, a new device-the Dual Gate Commutated Thyristor (GCT)-is proposed that combines the advantages of differently optimized GCTs and realizes low conduction and low switching losses in a single semiconductor device. The concept is introduced first, before the analytical design is presented. Next, finite-element-method simulations are employed to extend the investigation to devices that are not yet available. Measurements of a hybrid Dual GCT are added to verify the advantages of the concept. Finally, the results are discussed.</description><subject>Gate drive unit</subject><subject>GCT</subject><subject>IGCT</subject><subject>Industry Applications Society</subject><subject>Insulated gate bipolar transistors</subject><subject>Inverters</subject><subject>MOSFET circuits</subject><subject>Packaging</subject><subject>Power electronics</subject><subject>power semiconductor device</subject><subject>Semiconductor devices</subject><subject>Switching loss</subject><subject>Thyristors</subject><subject>Voltage</subject><issn>0093-9994</issn><issn>1939-9367</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2009</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNpdkE1PwkAQhjdGExG9m3hpvHgqzn53jwQUSIh4KOfNdrsLJaXFLpXgr7cE4sHLvId53snkQegRwwBjUK_pbDggAKobRFLBrlAPK6piRYW8Rr1uQ2OlFLtFdyFsADDjmPXQKF27aNyaMpqM0ngYfbhDNC1W6_izPrgmGrvvwrpoGYpqFS12-2Jb_Lj8xEaps-uqLuvV8R7deFMG93DJPlq-v6WjaTxfTGaj4Ty2lJB9jL1JfEYT7nOWAZNAhAeZgWBZ4qVQlFmjpBGGqlx4m3OubEYsEA-5VN7SPno539019Vfrwl5vi2BdWZrK1W3QklFBEsaTjnz-R27qtqm653TCJaGQAO0gOEO2qUNonNe7ptia5qgx6JNT3TnVJ6f64rSrPJ0rhXPuD-dYcBCc_gJ1Gm-j</recordid><startdate>20090901</startdate><enddate>20090901</enddate><creator>Kollensperger, P.</creator><creator>Bragard, M.</creator><creator>Plum, T.</creator><creator>De Doncker, R.W.</creator><general>IEEE</general><general>The Institute of Electrical and Electronics Engineers, Inc. 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The design of suitable devices is always a compromise between on-state losses and switching losses. In this paper, a new device-the Dual Gate Commutated Thyristor (GCT)-is proposed that combines the advantages of differently optimized GCTs and realizes low conduction and low switching losses in a single semiconductor device. The concept is introduced first, before the analytical design is presented. Next, finite-element-method simulations are employed to extend the investigation to devices that are not yet available. Measurements of a hybrid Dual GCT are added to verify the advantages of the concept. Finally, the results are discussed.</abstract><cop>New York</cop><pub>IEEE</pub><doi>10.1109/TIA.2009.2027364</doi><tpages>9</tpages></addata></record> |
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| source | IEEE Electronic Library (IEL) |
| subjects | Gate drive unit GCT IGCT Industry Applications Society Insulated gate bipolar transistors Inverters MOSFET circuits Packaging Power electronics power semiconductor device Semiconductor devices Switching loss Thyristors Voltage |
| title | The Dual GCT-A New High-Power Device Using Optimized GCT Technology |
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