Spatially Resolved Spin-Injection Probability for Gallium Arsenide

We report a large spin-polarized current injection from a ferromagnetic metal into a nonferromagnetic semiconductor, at a temperature of 100 Kelvin. The modification of the spin-injection process by a nanoscale step edge was observed. On flat gallium arsenide [GaAs(110)] terraces, the injection effi...

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Veröffentlicht in:	Science (American Association for the Advancement of Science) 2001-05, Vol.292 (5521), p.1518-1521
Hauptverfasser:	LaBella, V. P., Bullock, D. W., Ding, Z., Emery, C., Venkatesan, A., Oliver, W. F., Salamo, G. J., Thibado, P. M., Mortazavi, M.
Format:	Artikel
Sprache:	eng
Schlagworte:	Analysis Computers Condensed matter: electronic structure, electrical, magnetic, and optical properties Electric current Electron mobility Electron spectroscopy Electron tunneling Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures Electronic transport in interface structures Electrons Exact sciences and technology Gallium arsenide Integrated circuits Light Luminescence Magnetization Manufacturing Industry Measurement Microelectronics Miniature electronic equipment Optics Photons Physics Predetermined motion time systems Probability Sampling bias Semiconductor chips Semiconductors Terraces Topography Tunneling
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