Lattice Dynamics and the Optical Properties of Semiconductors: Theory of the Temperature Dependent Dielectric Functions of GaAs and Si and Comparison with Experiment

Lattice Dynamics and the Optical Properties of Semiconductors: Theory of the Temperature Dependent Dielectric Functions of GaAs and Si and Comparison with Experiment

A novel method for calculating the temperature dependencies of the linear dielectric functions of semiconductors is described, in which the lattice vibrations are represented by thermally-perturbed atomic configurations extracted from molecular dynamics (MD) simulations. Our theoretical results for...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:29th International Conference on the Physics of Semiconductors 2008-07, Vol.1199, p.61-62
Hauptverfasser: Ibrahim, Z A, Shkrebtii, A I, Lee, M J G, Teatro, T, Drago, M, Trepk, T, Richter, W
Format: Artikel
Sprache:eng
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
container_end_page 62
container_issue
container_start_page 61
container_title 29th International Conference on the Physics of Semiconductors
container_volume 1199
creator Ibrahim, Z A
Shkrebtii, A I
Lee, M J G
Teatro, T
Drago, M
Trepk, T
Richter, W
description A novel method for calculating the temperature dependencies of the linear dielectric functions of semiconductors is described, in which the lattice vibrations are represented by thermally-perturbed atomic configurations extracted from molecular dynamics (MD) simulations. Our theoretical results for bulk GaAs and Si in the range from 0 to 930 K are in good overall agreement with highly accurate ellipsometric measurements. The implementation of the method resolves a serious discrepancy in energy and line shape between experiment and the latest optical models, all of which neglect lattice dynamics and provide information on the indirect optical transitions and indirect gap in Si.
format Article
fullrecord <record><control><sourceid>proquest</sourceid><recordid>TN_cdi_proquest_miscellaneous_743282793</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>743282793</sourcerecordid><originalsourceid>FETCH-proquest_miscellaneous_7432827933</originalsourceid><addsrcrecordid>eNqNjc9KAzEQhwMq2KrvMDdPhbBZ3a436R89CBW6B28lZKfsSDaJyQTtA_meptUH8DI_mPnm-52JqWzUXV3GvToXEynbelbV6u1STFN6l7Jqm2Y-Ed8vmpkMwvLg9EgmgXY98ICwCWWvLbxGHzAyYQK_hy0WyLs-G_YxPUA3oI-H4-X40-FYWM05FiEGdD06hiWhRcORDKyzM0zenVxP-vG3bkunWPgx6EjJO_gkHmD1VWQ0FsW1uNhrm_DmL6_E7XrVLZ5nIfqPjIl3IyWD1mqHPqddU6tqXjWtUv8nfwDOImOg</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>743282793</pqid></control><display><type>article</type><title>Lattice Dynamics and the Optical Properties of Semiconductors: Theory of the Temperature Dependent Dielectric Functions of GaAs and Si and Comparison with Experiment</title><source>American Institute of Physics (AIP) Journals</source><creator>Ibrahim, Z A ; Shkrebtii, A I ; Lee, M J G ; Teatro, T ; Drago, M ; Trepk, T ; Richter, W</creator><creatorcontrib>Ibrahim, Z A ; Shkrebtii, A I ; Lee, M J G ; Teatro, T ; Drago, M ; Trepk, T ; Richter, W</creatorcontrib><description>A novel method for calculating the temperature dependencies of the linear dielectric functions of semiconductors is described, in which the lattice vibrations are represented by thermally-perturbed atomic configurations extracted from molecular dynamics (MD) simulations. Our theoretical results for bulk GaAs and Si in the range from 0 to 930 K are in good overall agreement with highly accurate ellipsometric measurements. The implementation of the method resolves a serious discrepancy in energy and line shape between experiment and the latest optical models, all of which neglect lattice dynamics and provide information on the indirect optical transitions and indirect gap in Si.</description><identifier>ISSN: 0094-243X</identifier><identifier>ISBN: 0735407363</identifier><identifier>ISBN: 9780735407367</identifier><language>eng</language><ispartof>29th International Conference on the Physics of Semiconductors, 2008-07, Vol.1199, p.61-62</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,776,780</link.rule.ids></links><search><creatorcontrib>Ibrahim, Z A</creatorcontrib><creatorcontrib>Shkrebtii, A I</creatorcontrib><creatorcontrib>Lee, M J G</creatorcontrib><creatorcontrib>Teatro, T</creatorcontrib><creatorcontrib>Drago, M</creatorcontrib><creatorcontrib>Trepk, T</creatorcontrib><creatorcontrib>Richter, W</creatorcontrib><title>Lattice Dynamics and the Optical Properties of Semiconductors: Theory of the Temperature Dependent Dielectric Functions of GaAs and Si and Comparison with Experiment</title><title>29th International Conference on the Physics of Semiconductors</title><description>A novel method for calculating the temperature dependencies of the linear dielectric functions of semiconductors is described, in which the lattice vibrations are represented by thermally-perturbed atomic configurations extracted from molecular dynamics (MD) simulations. Our theoretical results for bulk GaAs and Si in the range from 0 to 930 K are in good overall agreement with highly accurate ellipsometric measurements. The implementation of the method resolves a serious discrepancy in energy and line shape between experiment and the latest optical models, all of which neglect lattice dynamics and provide information on the indirect optical transitions and indirect gap in Si.</description><issn>0094-243X</issn><isbn>0735407363</isbn><isbn>9780735407367</isbn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2008</creationdate><recordtype>article</recordtype><recordid>eNqNjc9KAzEQhwMq2KrvMDdPhbBZ3a436R89CBW6B28lZKfsSDaJyQTtA_meptUH8DI_mPnm-52JqWzUXV3GvToXEynbelbV6u1STFN6l7Jqm2Y-Ed8vmpkMwvLg9EgmgXY98ICwCWWvLbxGHzAyYQK_hy0WyLs-G_YxPUA3oI-H4-X40-FYWM05FiEGdD06hiWhRcORDKyzM0zenVxP-vG3bkunWPgx6EjJO_gkHmD1VWQ0FsW1uNhrm_DmL6_E7XrVLZ5nIfqPjIl3IyWD1mqHPqddU6tqXjWtUv8nfwDOImOg</recordid><startdate>20080727</startdate><enddate>20080727</enddate><creator>Ibrahim, Z A</creator><creator>Shkrebtii, A I</creator><creator>Lee, M J G</creator><creator>Teatro, T</creator><creator>Drago, M</creator><creator>Trepk, T</creator><creator>Richter, W</creator><scope>7U5</scope><scope>8FD</scope><scope>L7M</scope></search><sort><creationdate>20080727</creationdate><title>Lattice Dynamics and the Optical Properties of Semiconductors: Theory of the Temperature Dependent Dielectric Functions of GaAs and Si and Comparison with Experiment</title><author>Ibrahim, Z A ; Shkrebtii, A I ; Lee, M J G ; Teatro, T ; Drago, M ; Trepk, T ; Richter, W</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-proquest_miscellaneous_7432827933</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2008</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Ibrahim, Z A</creatorcontrib><creatorcontrib>Shkrebtii, A I</creatorcontrib><creatorcontrib>Lee, M J G</creatorcontrib><creatorcontrib>Teatro, T</creatorcontrib><creatorcontrib>Drago, M</creatorcontrib><creatorcontrib>Trepk, T</creatorcontrib><creatorcontrib>Richter, W</creatorcontrib><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>29th International Conference on the Physics of Semiconductors</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Ibrahim, Z A</au><au>Shkrebtii, A I</au><au>Lee, M J G</au><au>Teatro, T</au><au>Drago, M</au><au>Trepk, T</au><au>Richter, W</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Lattice Dynamics and the Optical Properties of Semiconductors: Theory of the Temperature Dependent Dielectric Functions of GaAs and Si and Comparison with Experiment</atitle><jtitle>29th International Conference on the Physics of Semiconductors</jtitle><date>2008-07-27</date><risdate>2008</risdate><volume>1199</volume><spage>61</spage><epage>62</epage><pages>61-62</pages><issn>0094-243X</issn><isbn>0735407363</isbn><isbn>9780735407367</isbn><abstract>A novel method for calculating the temperature dependencies of the linear dielectric functions of semiconductors is described, in which the lattice vibrations are represented by thermally-perturbed atomic configurations extracted from molecular dynamics (MD) simulations. Our theoretical results for bulk GaAs and Si in the range from 0 to 930 K are in good overall agreement with highly accurate ellipsometric measurements. The implementation of the method resolves a serious discrepancy in energy and line shape between experiment and the latest optical models, all of which neglect lattice dynamics and provide information on the indirect optical transitions and indirect gap in Si.</abstract></addata></record>
fulltext fulltext
identifier ISSN: 0094-243X
ispartof 29th International Conference on the Physics of Semiconductors, 2008-07, Vol.1199, p.61-62
issn 0094-243X
language eng
recordid cdi_proquest_miscellaneous_743282793
source American Institute of Physics (AIP) Journals
title Lattice Dynamics and the Optical Properties of Semiconductors: Theory of the Temperature Dependent Dielectric Functions of GaAs and Si and Comparison with Experiment
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-24T17%3A00%3A21IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Lattice%20Dynamics%20and%20the%20Optical%20Properties%20of%20Semiconductors:%20Theory%20of%20the%20Temperature%20Dependent%20Dielectric%20Functions%20of%20GaAs%20and%20Si%20and%20Comparison%20with%20Experiment&rft.jtitle=29th%20International%20Conference%20on%20the%20Physics%20of%20Semiconductors&rft.au=Ibrahim,%20Z%20A&rft.date=2008-07-27&rft.volume=1199&rft.spage=61&rft.epage=62&rft.pages=61-62&rft.issn=0094-243X&rft.isbn=0735407363&rft.isbn_list=9780735407367&rft_id=info:doi/&rft_dat=%3Cproquest%3E743282793%3C/proquest%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=743282793&rft_id=info:pmid/&rfr_iscdi=true