Elastomeric Transistor Stamps: Reversible Probing of Charge Transport in Organic Crystals
We introduce a method to fabricate high-performance field-effect transistors on the surface of freestanding organic single crystals. The transistors are constructed by laminating a monolithic elastomeric transistor stamp against the surface of a crystal. This method, which eliminates exposure of the...
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| Veröffentlicht in: | Science (American Association for the Advancement of Science) 2004-03, Vol.303 (5664), p.1644-1646 |
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| container_title | Science (American Association for the Advancement of Science) |
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| creator | Sundar, Vikram C. Zaumseil, Jana Podzorov, Vitaly Menard, Etienne Willett, Robert L. Someya, Takao Gershenson, Michael E. Rogers, John A. |
| description | We introduce a method to fabricate high-performance field-effect transistors on the surface of freestanding organic single crystals. The transistors are constructed by laminating a monolithic elastomeric transistor stamp against the surface of a crystal. This method, which eliminates exposure of the fragile organic surface to the hazards of conventional processing, enables fabrication of rubrene transistors with charge carrier mobilities as high as$\sim 15 cm^2/V\cdot s$and subthreshold slopes as low as$2 nF\cdot V/decade\cdot cm^2$. Multiple relamination of the transistor stamp against the same crystal does not affect the transistor characteristics; we exploit this reversibility to reveal anisotropic charge transport at the basal plane of rubrene. |
| doi_str_mv | 10.1126/science.1094196 |
| format | Article |
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The transistors are constructed by laminating a monolithic elastomeric transistor stamp against the surface of a crystal. This method, which eliminates exposure of the fragile organic surface to the hazards of conventional processing, enables fabrication of rubrene transistors with charge carrier mobilities as high as$\sim 15 cm^2/V\cdot s$and subthreshold slopes as low as$2 nF\cdot V/decade\cdot cm^2$. Multiple relamination of the transistor stamp against the same crystal does not affect the transistor characteristics; we exploit this reversibility to reveal anisotropic charge transport at the basal plane of rubrene.</description><identifier>ISSN: 0036-8075</identifier><identifier>EISSN: 1095-9203</identifier><identifier>DOI: 10.1126/science.1094196</identifier><identifier>PMID: 15016993</identifier><identifier>CODEN: SCIEAS</identifier><language>eng</language><publisher>Washington, DC: American Association for the Advancement of Science</publisher><subject>Anisotropy ; Applied sciences ; Crystal surfaces ; Crystals ; Design and construction ; Dielectric materials ; Elastomers ; Electric potential ; Electric properties ; Electrodes ; Electronics ; Exact sciences and technology ; Field effect transistors ; Laminates ; Manufacturing ; Materials ; Molecular Structure ; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices ; Single crystals ; Transistors ; Wetting front</subject><ispartof>Science (American Association for the Advancement of Science), 2004-03, Vol.303 (5664), p.1644-1646</ispartof><rights>Copyright 2004 American Association for the Advancement of Science</rights><rights>2004 INIST-CNRS</rights><rights>COPYRIGHT 2004 American Association for the Advancement of Science</rights><rights>COPYRIGHT 2004 American Association for the Advancement of Science</rights><rights>Copyright American Association for the Advancement of Science Mar 12, 2004</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c819t-e161627ac991e0274f938f230654fb63e22f1273c4972df26d711b0043f420533</citedby><cites>FETCH-LOGICAL-c819t-e161627ac991e0274f938f230654fb63e22f1273c4972df26d711b0043f420533</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://www.jstor.org/stable/pdf/3836450$$EPDF$$P50$$Gjstor$$H</linktopdf><linktohtml>$$Uhttps://www.jstor.org/stable/3836450$$EHTML$$P50$$Gjstor$$H</linktohtml><link.rule.ids>314,780,784,803,2884,2885,27924,27925,58017,58250</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=15573528$$DView record in Pascal Francis$$Hfree_for_read</backlink><backlink>$$Uhttps://www.ncbi.nlm.nih.gov/pubmed/15016993$$D View this record in MEDLINE/PubMed$$Hfree_for_read</backlink></links><search><creatorcontrib>Sundar, Vikram C.</creatorcontrib><creatorcontrib>Zaumseil, Jana</creatorcontrib><creatorcontrib>Podzorov, Vitaly</creatorcontrib><creatorcontrib>Menard, Etienne</creatorcontrib><creatorcontrib>Willett, Robert L.</creatorcontrib><creatorcontrib>Someya, Takao</creatorcontrib><creatorcontrib>Gershenson, Michael E.</creatorcontrib><creatorcontrib>Rogers, John A.</creatorcontrib><title>Elastomeric Transistor Stamps: Reversible Probing of Charge Transport in Organic Crystals</title><title>Science (American Association for the Advancement of Science)</title><addtitle>Science</addtitle><description>We introduce a method to fabricate high-performance field-effect transistors on the surface of freestanding organic single crystals. The transistors are constructed by laminating a monolithic elastomeric transistor stamp against the surface of a crystal. This method, which eliminates exposure of the fragile organic surface to the hazards of conventional processing, enables fabrication of rubrene transistors with charge carrier mobilities as high as$\sim 15 cm^2/V\cdot s$and subthreshold slopes as low as$2 nF\cdot V/decade\cdot cm^2$. Multiple relamination of the transistor stamp against the same crystal does not affect the transistor characteristics; we exploit this reversibility to reveal anisotropic charge transport at the basal plane of rubrene.</description><subject>Anisotropy</subject><subject>Applied sciences</subject><subject>Crystal surfaces</subject><subject>Crystals</subject><subject>Design and construction</subject><subject>Dielectric materials</subject><subject>Elastomers</subject><subject>Electric potential</subject><subject>Electric properties</subject><subject>Electrodes</subject><subject>Electronics</subject><subject>Exact sciences and technology</subject><subject>Field effect transistors</subject><subject>Laminates</subject><subject>Manufacturing</subject><subject>Materials</subject><subject>Molecular Structure</subject><subject>Semiconductor electronics. Microelectronics. Optoelectronics. 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The transistors are constructed by laminating a monolithic elastomeric transistor stamp against the surface of a crystal. This method, which eliminates exposure of the fragile organic surface to the hazards of conventional processing, enables fabrication of rubrene transistors with charge carrier mobilities as high as$\sim 15 cm^2/V\cdot s$and subthreshold slopes as low as$2 nF\cdot V/decade\cdot cm^2$. Multiple relamination of the transistor stamp against the same crystal does not affect the transistor characteristics; we exploit this reversibility to reveal anisotropic charge transport at the basal plane of rubrene.</abstract><cop>Washington, DC</cop><pub>American Association for the Advancement of Science</pub><pmid>15016993</pmid><doi>10.1126/science.1094196</doi><tpages>3</tpages></addata></record> |
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| identifier | ISSN: 0036-8075 |
| ispartof | Science (American Association for the Advancement of Science), 2004-03, Vol.303 (5664), p.1644-1646 |
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| language | eng |
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| source | Science Magazine; JSTOR Archive Collection A-Z Listing |
| subjects | Anisotropy Applied sciences Crystal surfaces Crystals Design and construction Dielectric materials Elastomers Electric potential Electric properties Electrodes Electronics Exact sciences and technology Field effect transistors Laminates Manufacturing Materials Molecular Structure Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Single crystals Transistors Wetting front |
| title | Elastomeric Transistor Stamps: Reversible Probing of Charge Transport in Organic Crystals |
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