Free-standing gallium nitride Schottky diode characteristics and stability in a high-temperature environment

Schottky diodes have been fabricated using low-resistivity n-type free-standing GaN substrates with a reduced defect density lowly doped n-type epi-layer and an Ni/Ti/Pt/Au Schottky contact metalization. A thermionic field emission current transport mechanism was identified with a Schottky barrier h...

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Veröffentlicht in:	Semiconductor science and technology 2009-12, Vol.24 (12), p.125008-125008 (8)
Hauptverfasser:	O'Mahony, Donagh, Zimmerman, Walter, Steffen, Sinje, Hilgarth, Just, Maaskant, Pleun, Ginige, Ravin, Lewis, Liam, Lambert, Benoit, Corbett, Brian
Format:	Artikel
Sprache:	eng
Schlagworte:	Condensed matter: electronic structure, electrical, magnetic, and optical properties Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures Exact sciences and technology Physics Surface double layers, schottky barriers, and work functions
Online-Zugang:	Volltext
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