Fabrication of Mesa Shaped InGaN-Based Light-Emitting Diodes Through a Photoelectrochemical Process
InGaN-based light-emitting diodes (LEDs) were fabricated to have a higher light extraction through the photoelectrochemical (PEC) mesa shaping process. After the PEC selective wet oxidation and wet etching processes, stable and controllable crystallographic etching planes were formed as p -type GaN...
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| Veröffentlicht in: | Journal of electronic materials 2009, Vol.38 (1), p.145-152 |
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| creator | Yang, Chung-Chieh Lin, Chia-Feng Chiang, Jen-Hao Liu, Hsun-Chih Lin, Chun-Min Fan, Feng-Hsu Chang, Chung-Ying |
| description | InGaN-based light-emitting diodes (LEDs) were fabricated to have a higher light extraction through the photoelectrochemical (PEC) mesa shaping process. After the PEC selective wet oxidation and wet etching processes, stable and controllable crystallographic etching planes were formed as
p
-type GaN {
} planes and
n
-type GaN {
} planes included at an angle of 27 deg. The ever-present cone-shaped structure of a PEC-treated LED has a larger light scattering area and higher light extraction cones on the mesa sidewall, as analyzed by microphotoluminescence and light output power measurement. This cone-shaped-sidewall LED has a higher light output power and a larger divergence angle compared with a conventional LED measured in an LED chip form. |
| doi_str_mv | 10.1007/s11664-008-0581-6 |
| format | Article |
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p
-type GaN {
} planes and
n
-type GaN {
} planes included at an angle of 27 deg. The ever-present cone-shaped structure of a PEC-treated LED has a larger light scattering area and higher light extraction cones on the mesa sidewall, as analyzed by microphotoluminescence and light output power measurement. This cone-shaped-sidewall LED has a higher light output power and a larger divergence angle compared with a conventional LED measured in an LED chip form.</description><identifier>ISSN: 0361-5235</identifier><identifier>EISSN: 1543-186X</identifier><identifier>DOI: 10.1007/s11664-008-0581-6</identifier><identifier>CODEN: JECMA5</identifier><language>eng</language><publisher>Boston: Springer US</publisher><subject>Applied sciences ; Characterization and Evaluation of Materials ; Chemistry and Materials Science ; Crystallography ; Electronics ; Electronics and Microelectronics ; Exact sciences and technology ; Fabric analysis ; Fabrics ; Instrumentation ; Light emitting diodes ; Materials Science ; Optical and Electronic Materials ; Optoelectronic devices ; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices ; Solid State Physics ; Studies</subject><ispartof>Journal of electronic materials, 2009, Vol.38 (1), p.145-152</ispartof><rights>TMS 2008</rights><rights>2009 INIST-CNRS</rights><rights>Copyright Minerals, Metals & Materials Society Jan 2009</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><cites>FETCH-LOGICAL-c329t-cdb80fbeb70e54aa829b5ba92d5ce25285ab81354b38054f04284f38c98c37463</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://link.springer.com/content/pdf/10.1007/s11664-008-0581-6$$EPDF$$P50$$Gspringer$$H</linktopdf><linktohtml>$$Uhttps://link.springer.com/10.1007/s11664-008-0581-6$$EHTML$$P50$$Gspringer$$H</linktohtml><link.rule.ids>314,776,780,4009,27902,27903,27904,41467,42536,51297</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=21079257$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Yang, Chung-Chieh</creatorcontrib><creatorcontrib>Lin, Chia-Feng</creatorcontrib><creatorcontrib>Chiang, Jen-Hao</creatorcontrib><creatorcontrib>Liu, Hsun-Chih</creatorcontrib><creatorcontrib>Lin, Chun-Min</creatorcontrib><creatorcontrib>Fan, Feng-Hsu</creatorcontrib><creatorcontrib>Chang, Chung-Ying</creatorcontrib><title>Fabrication of Mesa Shaped InGaN-Based Light-Emitting Diodes Through a Photoelectrochemical Process</title><title>Journal of electronic materials</title><addtitle>Journal of Elec Materi</addtitle><description>InGaN-based light-emitting diodes (LEDs) were fabricated to have a higher light extraction through the photoelectrochemical (PEC) mesa shaping process. After the PEC selective wet oxidation and wet etching processes, stable and controllable crystallographic etching planes were formed as
p
-type GaN {
} planes and
n
-type GaN {
} planes included at an angle of 27 deg. The ever-present cone-shaped structure of a PEC-treated LED has a larger light scattering area and higher light extraction cones on the mesa sidewall, as analyzed by microphotoluminescence and light output power measurement. This cone-shaped-sidewall LED has a higher light output power and a larger divergence angle compared with a conventional LED measured in an LED chip form.</description><subject>Applied sciences</subject><subject>Characterization and Evaluation of Materials</subject><subject>Chemistry and Materials Science</subject><subject>Crystallography</subject><subject>Electronics</subject><subject>Electronics and Microelectronics</subject><subject>Exact sciences and technology</subject><subject>Fabric analysis</subject><subject>Fabrics</subject><subject>Instrumentation</subject><subject>Light emitting diodes</subject><subject>Materials Science</subject><subject>Optical and Electronic Materials</subject><subject>Optoelectronic devices</subject><subject>Semiconductor electronics. Microelectronics. Optoelectronics. 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Microelectronics. Optoelectronics. Solid state devices</topic><topic>Solid State Physics</topic><topic>Studies</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Yang, Chung-Chieh</creatorcontrib><creatorcontrib>Lin, Chia-Feng</creatorcontrib><creatorcontrib>Chiang, Jen-Hao</creatorcontrib><creatorcontrib>Liu, Hsun-Chih</creatorcontrib><creatorcontrib>Lin, Chun-Min</creatorcontrib><creatorcontrib>Fan, Feng-Hsu</creatorcontrib><creatorcontrib>Chang, Chung-Ying</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>ProQuest Central (Corporate)</collection><collection>ProQuest Central (purchase pre-March 2016)</collection><collection>Science Database (Alumni Edition)</collection><collection>STEM Database</collection><collection>ProQuest Pharma Collection</collection><collection>ProQuest SciTech Collection</collection><collection>ProQuest Technology Collection</collection><collection>ProQuest Central (Alumni) (purchase pre-March 2016)</collection><collection>Research Library (Alumni Edition)</collection><collection>Materials Science & Engineering Collection</collection><collection>ProQuest Central (Alumni Edition)</collection><collection>ProQuest Central UK/Ireland</collection><collection>Advanced Technologies & Aerospace Collection</collection><collection>ProQuest Central Essentials</collection><collection>ProQuest Central</collection><collection>Technology Collection</collection><collection>ProQuest One Community College</collection><collection>ProQuest Materials Science Collection</collection><collection>ProQuest Central Korea</collection><collection>ProQuest Central Student</collection><collection>Research Library Prep</collection><collection>SciTech Premium Collection</collection><collection>Materials Science Database</collection><collection>ProQuest Engineering Collection</collection><collection>Research Library</collection><collection>Science Database</collection><collection>Engineering Database</collection><collection>Research Library (Corporate)</collection><collection>Advanced Technologies & Aerospace Database</collection><collection>ProQuest Advanced Technologies & Aerospace Collection</collection><collection>Materials Science Collection</collection><collection>ProQuest One Academic Eastern Edition (DO NOT USE)</collection><collection>ProQuest One Academic</collection><collection>ProQuest One Academic UKI Edition</collection><collection>ProQuest Central China</collection><collection>Engineering Collection</collection><collection>ProQuest Central Basic</collection><collection>SIRS Editorial</collection><collection>Ceramic Abstracts</collection><collection>Electronics & Communications Abstracts</collection><collection>Engineered Materials Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Journal of electronic materials</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Yang, Chung-Chieh</au><au>Lin, Chia-Feng</au><au>Chiang, Jen-Hao</au><au>Liu, Hsun-Chih</au><au>Lin, Chun-Min</au><au>Fan, Feng-Hsu</au><au>Chang, Chung-Ying</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Fabrication of Mesa Shaped InGaN-Based Light-Emitting Diodes Through a Photoelectrochemical Process</atitle><jtitle>Journal of electronic materials</jtitle><stitle>Journal of Elec Materi</stitle><date>2009</date><risdate>2009</risdate><volume>38</volume><issue>1</issue><spage>145</spage><epage>152</epage><pages>145-152</pages><issn>0361-5235</issn><eissn>1543-186X</eissn><coden>JECMA5</coden><abstract>InGaN-based light-emitting diodes (LEDs) were fabricated to have a higher light extraction through the photoelectrochemical (PEC) mesa shaping process. After the PEC selective wet oxidation and wet etching processes, stable and controllable crystallographic etching planes were formed as
p
-type GaN {
} planes and
n
-type GaN {
} planes included at an angle of 27 deg. The ever-present cone-shaped structure of a PEC-treated LED has a larger light scattering area and higher light extraction cones on the mesa sidewall, as analyzed by microphotoluminescence and light output power measurement. This cone-shaped-sidewall LED has a higher light output power and a larger divergence angle compared with a conventional LED measured in an LED chip form.</abstract><cop>Boston</cop><pub>Springer US</pub><doi>10.1007/s11664-008-0581-6</doi><tpages>8</tpages></addata></record> |
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| source | SpringerLink Journals - AutoHoldings |
| subjects | Applied sciences Characterization and Evaluation of Materials Chemistry and Materials Science Crystallography Electronics Electronics and Microelectronics Exact sciences and technology Fabric analysis Fabrics Instrumentation Light emitting diodes Materials Science Optical and Electronic Materials Optoelectronic devices Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Solid State Physics Studies |
| title | Fabrication of Mesa Shaped InGaN-Based Light-Emitting Diodes Through a Photoelectrochemical Process |
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