Device Characteristics of GaInSb/AlGaSb Quantum Well Lasers Monolithically Grown on GaAs Substrates by Using an Interfacial Misfit Array

We report the device characteristics of GaInSb/AlGaSb quantum well (QW) lasers monolithically grown on GaAs substrates by using an interfacial misfit (IMF) array. The IMF array localized at the GaSb/GaAs interface can accommodate the 7.8% lattice mismatch between GaAs substrates and GaSb buffer laye...

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Veröffentlicht in:	Journal of electronic materials 2008-12, Vol.37 (12), p.1758-1763
Hauptverfasser:	Tatebayashi, J., Jallipalli, A., Kutty, M.N., Huang, S.H., Rotter, T.J., Balakrishnan, G., Dawson, L.R., Huffaker, D.L.
Format:	Artikel
Sprache:	eng
Schlagworte:	Characterization and Evaluation of Materials Chemical compounds Chemistry and Materials Science Electroluminescence Electronics and Microelectronics Instrumentation Lasers Materials Science Optical and Electronic Materials Solid State Physics Substrates
Online-Zugang:	Volltext
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