Observation of Charge Transport by Negatively Charged Excitons
We report transport of electron-hole complexes in semiconductor quantum wells under applied electric fields. Negatively charged excitons (X-), created by laser excitation of a high electron mobility transistor, are observed to drift upon applying a voltage between the source and drain. In contrast,...
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| Veröffentlicht in: | Science (American Association for the Advancement of Science) 2001-10, Vol.294 (5543), p.837-839 |
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| creator | Sanvitto, Daniele Pulizzi, Fabio Shields, Andrew J. Peter C. M. Christianen Holmes, Stuart N. Simmons, Michelle Y. Ritchie, David A. Maan, Jan C. Pepper, Michael |
| description | We report transport of electron-hole complexes in semiconductor quantum wells under applied electric fields. Negatively charged excitons (X-), created by laser excitation of a high electron mobility transistor, are observed to drift upon applying a voltage between the source and drain. In contrast, neutral excitons do not drift under similar conditions. The X-mobility is found to be as high as$6.5 \times 10^4\>cm^2\>V^{-1}\>s^{-1}$. The results demonstrate that X-exists as a free particle in the best-quality samples and suggest that light emission from opto-electronic devices can be manipulated through exciton drift under applied electric fields. |
| doi_str_mv | 10.1126/science.1064847 |
| format | Article |
| fullrecord | <record><control><sourceid>gale_proqu</sourceid><recordid>TN_cdi_proquest_miscellaneous_743105648</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><galeid>A80061943</galeid><jstor_id>3085073</jstor_id><sourcerecordid>A80061943</sourcerecordid><originalsourceid>FETCH-LOGICAL-c815t-54cd63b88d97674d709fd6ad3bd42f361e7fb0b20238d4288904a01f70623d913</originalsourceid><addsrcrecordid>eNqN0s9r2zAUB3AzNtas23mXMcxgPw51-yTZknwZdKHLCqE5rNtVyPKz5-BYqWSX5r-fQsxKRtiCDgK9jx5I7xtFrwmcE0L5hTcNdgbPCfBUpuJJNCGQZ0lOgT2NJgCMJxJEdhK98H4JEGo5ex6dEJIJQYFMos-LwqO7131ju9hW8fSXdjXGt053fm1dHxeb-AbrUL_HdjOWy_jqwTS97fzL6FmlW4-vxv00-vH16nb6LZkvZtfTy3liJMn6JEtNyVkhZZkLLtJSQF6VXJesKFNaMU5QVAUUFCiT4UTKHFINpBLAKStzwk6jj7u-a2fvBvS9WjXeYNvqDu3glUgZgSz8QZAf_i0pDTS0_R-knLM8SyHAd3_BpR1cF56rKGEZzyHborMdqnWLqukq2zttauzQ6dZ2WDXh-FICcJKnLPDkAA-rxFVjDvlPez6QHh_6Wg_eq-vvN0fTxc-j6ZfZsVTO5nv07BA1tm2xRhVyMV3s8YsdN85677BSa9estNsoAmobcjWGXI0hDzfejgMZihWWj35MdQDvR6C90W0Vwmwa_-hSEvqw7dDe7NzS99b9qTOQGQjGfgNjfQc7</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>213569050</pqid></control><display><type>article</type><title>Observation of Charge Transport by Negatively Charged Excitons</title><source>American Association for the Advancement of Science</source><source>Jstor Complete Legacy</source><creator>Sanvitto, Daniele ; Pulizzi, Fabio ; Shields, Andrew J. ; Peter C. M. Christianen ; Holmes, Stuart N. ; Simmons, Michelle Y. ; Ritchie, David A. ; Maan, Jan C. ; Pepper, Michael</creator><creatorcontrib>Sanvitto, Daniele ; Pulizzi, Fabio ; Shields, Andrew J. ; Peter C. M. Christianen ; Holmes, Stuart N. ; Simmons, Michelle Y. ; Ritchie, David A. ; Maan, Jan C. ; Pepper, Michael</creatorcontrib><description>We report transport of electron-hole complexes in semiconductor quantum wells under applied electric fields. Negatively charged excitons (X-), created by laser excitation of a high electron mobility transistor, are observed to drift upon applying a voltage between the source and drain. In contrast, neutral excitons do not drift under similar conditions. The X-mobility is found to be as high as$6.5 \times 10^4\>cm^2\>V^{-1}\>s^{-1}$. The results demonstrate that X-exists as a free particle in the best-quality samples and suggest that light emission from opto-electronic devices can be manipulated through exciton drift under applied electric fields.</description><identifier>ISSN: 0036-8075</identifier><identifier>EISSN: 1095-9203</identifier><identifier>DOI: 10.1126/science.1064847</identifier><identifier>PMID: 11577201</identifier><identifier>CODEN: SCIEAS</identifier><language>eng</language><publisher>Washington, DC: American Society for the Advancement of Science</publisher><subject>Collective excitations (including excitons, polarons, plasmons and other charge-density excitations) ; Collective excitations (including plasmons and other charge-density excitations) ; Condensed matter: electronic structure, electrical, magnetic, and optical properties ; Drains ; Electric fields ; Electric potential ; Electron density ; Electron states and collective excitations in thin films, multilayers, quantum wells, mesoscopic and nanoscale systems ; Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures ; Electrons ; Exact sciences and technology ; Exciton theory ; Excitons ; Experiments ; Hydrogen ; Laboratories ; Lasers ; Light ; Mechanics (Physics) ; Mobility ; Observation ; Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation ; Optical properties of low-dimensional, mesoscopic, and nanoscale materials and structures ; Physics ; Quantum Mechanics ; Quantum wells ; Semiconductors ; Surface and interface electron states ; Transistors</subject><ispartof>Science (American Association for the Advancement of Science), 2001-10, Vol.294 (5543), p.837-839</ispartof><rights>Copyright 2001 American Association for the Advancement of Science</rights><rights>2002 INIST-CNRS</rights><rights>COPYRIGHT 2001 American Association for the Advancement of Science</rights><rights>COPYRIGHT 2001 American Association for the Advancement of Science</rights><rights>Copyright American Association for the Advancement of Science Oct 26, 2001</rights><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c815t-54cd63b88d97674d709fd6ad3bd42f361e7fb0b20238d4288904a01f70623d913</citedby><cites>FETCH-LOGICAL-c815t-54cd63b88d97674d709fd6ad3bd42f361e7fb0b20238d4288904a01f70623d913</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://www.jstor.org/stable/pdf/3085073$$EPDF$$P50$$Gjstor$$H</linktopdf><linktohtml>$$Uhttps://www.jstor.org/stable/3085073$$EHTML$$P50$$Gjstor$$H</linktohtml><link.rule.ids>314,776,780,799,2871,2872,27901,27902,57992,58225</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=14148430$$DView record in Pascal Francis$$Hfree_for_read</backlink><backlink>$$Uhttps://www.ncbi.nlm.nih.gov/pubmed/11577201$$D View this record in MEDLINE/PubMed$$Hfree_for_read</backlink></links><search><creatorcontrib>Sanvitto, Daniele</creatorcontrib><creatorcontrib>Pulizzi, Fabio</creatorcontrib><creatorcontrib>Shields, Andrew J.</creatorcontrib><creatorcontrib>Peter C. M. Christianen</creatorcontrib><creatorcontrib>Holmes, Stuart N.</creatorcontrib><creatorcontrib>Simmons, Michelle Y.</creatorcontrib><creatorcontrib>Ritchie, David A.</creatorcontrib><creatorcontrib>Maan, Jan C.</creatorcontrib><creatorcontrib>Pepper, Michael</creatorcontrib><title>Observation of Charge Transport by Negatively Charged Excitons</title><title>Science (American Association for the Advancement of Science)</title><addtitle>Science</addtitle><description>We report transport of electron-hole complexes in semiconductor quantum wells under applied electric fields. Negatively charged excitons (X-), created by laser excitation of a high electron mobility transistor, are observed to drift upon applying a voltage between the source and drain. In contrast, neutral excitons do not drift under similar conditions. The X-mobility is found to be as high as$6.5 \times 10^4\>cm^2\>V^{-1}\>s^{-1}$. The results demonstrate that X-exists as a free particle in the best-quality samples and suggest that light emission from opto-electronic devices can be manipulated through exciton drift under applied electric fields.</description><subject>Collective excitations (including excitons, polarons, plasmons and other charge-density excitations)</subject><subject>Collective excitations (including plasmons and other charge-density excitations)</subject><subject>Condensed matter: electronic structure, electrical, magnetic, and optical properties</subject><subject>Drains</subject><subject>Electric fields</subject><subject>Electric potential</subject><subject>Electron density</subject><subject>Electron states and collective excitations in thin films, multilayers, quantum wells, mesoscopic and nanoscale systems</subject><subject>Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures</subject><subject>Electrons</subject><subject>Exact sciences and technology</subject><subject>Exciton theory</subject><subject>Excitons</subject><subject>Experiments</subject><subject>Hydrogen</subject><subject>Laboratories</subject><subject>Lasers</subject><subject>Light</subject><subject>Mechanics (Physics)</subject><subject>Mobility</subject><subject>Observation</subject><subject>Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation</subject><subject>Optical properties of low-dimensional, mesoscopic, and nanoscale materials and structures</subject><subject>Physics</subject><subject>Quantum Mechanics</subject><subject>Quantum wells</subject><subject>Semiconductors</subject><subject>Surface and interface electron states</subject><subject>Transistors</subject><issn>0036-8075</issn><issn>1095-9203</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2001</creationdate><recordtype>article</recordtype><sourceid>8G5</sourceid><sourceid>BEC</sourceid><sourceid>BENPR</sourceid><sourceid>GUQSH</sourceid><sourceid>M2O</sourceid><recordid>eNqN0s9r2zAUB3AzNtas23mXMcxgPw51-yTZknwZdKHLCqE5rNtVyPKz5-BYqWSX5r-fQsxKRtiCDgK9jx5I7xtFrwmcE0L5hTcNdgbPCfBUpuJJNCGQZ0lOgT2NJgCMJxJEdhK98H4JEGo5ex6dEJIJQYFMos-LwqO7131ju9hW8fSXdjXGt053fm1dHxeb-AbrUL_HdjOWy_jqwTS97fzL6FmlW4-vxv00-vH16nb6LZkvZtfTy3liJMn6JEtNyVkhZZkLLtJSQF6VXJesKFNaMU5QVAUUFCiT4UTKHFINpBLAKStzwk6jj7u-a2fvBvS9WjXeYNvqDu3glUgZgSz8QZAf_i0pDTS0_R-knLM8SyHAd3_BpR1cF56rKGEZzyHborMdqnWLqukq2zttauzQ6dZ2WDXh-FICcJKnLPDkAA-rxFVjDvlPez6QHh_6Wg_eq-vvN0fTxc-j6ZfZsVTO5nv07BA1tm2xRhVyMV3s8YsdN85677BSa9estNsoAmobcjWGXI0hDzfejgMZihWWj35MdQDvR6C90W0Vwmwa_-hSEvqw7dDe7NzS99b9qTOQGQjGfgNjfQc7</recordid><startdate>20011026</startdate><enddate>20011026</enddate><creator>Sanvitto, Daniele</creator><creator>Pulizzi, Fabio</creator><creator>Shields, Andrew J.</creator><creator>Peter C. M. Christianen</creator><creator>Holmes, Stuart N.</creator><creator>Simmons, Michelle Y.</creator><creator>Ritchie, David A.</creator><creator>Maan, Jan C.</creator><creator>Pepper, Michael</creator><general>American Society for the Advancement of Science</general><general>American Association for the Advancement of Science</general><general>The American Association for the Advancement of Science</general><scope>IQODW</scope><scope>NPM</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>8GL</scope><scope>IBG</scope><scope>IOV</scope><scope>ISN</scope><scope>0-V</scope><scope>3V.</scope><scope>7QF</scope><scope>7QG</scope><scope>7QL</scope><scope>7QP</scope><scope>7QQ</scope><scope>7QR</scope><scope>7SC</scope><scope>7SE</scope><scope>7SN</scope><scope>7SP</scope><scope>7SR</scope><scope>7SS</scope><scope>7T7</scope><scope>7TA</scope><scope>7TB</scope><scope>7TK</scope><scope>7TM</scope><scope>7U5</scope><scope>7U9</scope><scope>7X2</scope><scope>7X7</scope><scope>7XB</scope><scope>88A</scope><scope>88B</scope><scope>88E</scope><scope>88I</scope><scope>8AF</scope><scope>8BQ</scope><scope>8FD</scope><scope>8FE</scope><scope>8FG</scope><scope>8FH</scope><scope>8FI</scope><scope>8FJ</scope><scope>8FK</scope><scope>8G5</scope><scope>ABJCF</scope><scope>ABUWG</scope><scope>AEUYN</scope><scope>AFKRA</scope><scope>ALSLI</scope><scope>ARAPS</scope><scope>ATCPS</scope><scope>AZQEC</scope><scope>BBNVY</scope><scope>BEC</scope><scope>BENPR</scope><scope>BGLVJ</scope><scope>BHPHI</scope><scope>BKSAR</scope><scope>C1K</scope><scope>CCPQU</scope><scope>CJNVE</scope><scope>D1I</scope><scope>DWQXO</scope><scope>F28</scope><scope>FR3</scope><scope>FYUFA</scope><scope>GHDGH</scope><scope>GNUQQ</scope><scope>GUQSH</scope><scope>H8D</scope><scope>H8G</scope><scope>H94</scope><scope>HCIFZ</scope><scope>JG9</scope><scope>JQ2</scope><scope>K9-</scope><scope>K9.</scope><scope>KB.</scope><scope>KR7</scope><scope>L6V</scope><scope>L7M</scope><scope>LK8</scope><scope>L~C</scope><scope>L~D</scope><scope>M0K</scope><scope>M0P</scope><scope>M0R</scope><scope>M0S</scope><scope>M1P</scope><scope>M2O</scope><scope>M2P</scope><scope>M7N</scope><scope>M7P</scope><scope>M7S</scope><scope>MBDVC</scope><scope>P5Z</scope><scope>P62</scope><scope>P64</scope><scope>PATMY</scope><scope>PCBAR</scope><scope>PDBOC</scope><scope>PQEDU</scope><scope>PQEST</scope><scope>PQQKQ</scope><scope>PQUKI</scope><scope>PRINS</scope><scope>PTHSS</scope><scope>PYCSY</scope><scope>Q9U</scope><scope>R05</scope><scope>RC3</scope><scope>7X8</scope></search><sort><creationdate>20011026</creationdate><title>Observation of Charge Transport by Negatively Charged Excitons</title><author>Sanvitto, Daniele ; Pulizzi, Fabio ; Shields, Andrew J. ; Peter C. M. Christianen ; Holmes, Stuart N. ; Simmons, Michelle Y. ; Ritchie, David A. ; Maan, Jan C. ; Pepper, Michael</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c815t-54cd63b88d97674d709fd6ad3bd42f361e7fb0b20238d4288904a01f70623d913</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2001</creationdate><topic>Collective excitations (including excitons, polarons, plasmons and other charge-density excitations)</topic><topic>Collective excitations (including plasmons and other charge-density excitations)</topic><topic>Condensed matter: electronic structure, electrical, magnetic, and optical properties</topic><topic>Drains</topic><topic>Electric fields</topic><topic>Electric potential</topic><topic>Electron density</topic><topic>Electron states and collective excitations in thin films, multilayers, quantum wells, mesoscopic and nanoscale systems</topic><topic>Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures</topic><topic>Electrons</topic><topic>Exact sciences and technology</topic><topic>Exciton theory</topic><topic>Excitons</topic><topic>Experiments</topic><topic>Hydrogen</topic><topic>Laboratories</topic><topic>Lasers</topic><topic>Light</topic><topic>Mechanics (Physics)</topic><topic>Mobility</topic><topic>Observation</topic><topic>Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation</topic><topic>Optical properties of low-dimensional, mesoscopic, and nanoscale materials and structures</topic><topic>Physics</topic><topic>Quantum Mechanics</topic><topic>Quantum wells</topic><topic>Semiconductors</topic><topic>Surface and interface electron states</topic><topic>Transistors</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Sanvitto, Daniele</creatorcontrib><creatorcontrib>Pulizzi, Fabio</creatorcontrib><creatorcontrib>Shields, Andrew J.</creatorcontrib><creatorcontrib>Peter C. M. Christianen</creatorcontrib><creatorcontrib>Holmes, Stuart N.</creatorcontrib><creatorcontrib>Simmons, Michelle Y.</creatorcontrib><creatorcontrib>Ritchie, David A.</creatorcontrib><creatorcontrib>Maan, Jan C.</creatorcontrib><creatorcontrib>Pepper, Michael</creatorcontrib><collection>Pascal-Francis</collection><collection>PubMed</collection><collection>CrossRef</collection><collection>Gale In Context: High School</collection><collection>Gale In Context: Biography</collection><collection>Gale In Context: Opposing Viewpoints</collection><collection>Gale In Context: Canada</collection><collection>ProQuest Social Sciences Premium Collection</collection><collection>ProQuest Central (Corporate)</collection><collection>Aluminium Industry Abstracts</collection><collection>Animal Behavior Abstracts</collection><collection>Bacteriology Abstracts (Microbiology B)</collection><collection>Calcium & Calcified Tissue Abstracts</collection><collection>Ceramic Abstracts</collection><collection>Chemoreception Abstracts</collection><collection>Computer and Information Systems Abstracts</collection><collection>Corrosion Abstracts</collection><collection>Ecology Abstracts</collection><collection>Electronics & Communications Abstracts</collection><collection>Engineered Materials Abstracts</collection><collection>Entomology Abstracts (Full archive)</collection><collection>Industrial and Applied Microbiology Abstracts (Microbiology A)</collection><collection>Materials Business File</collection><collection>Mechanical & Transportation Engineering Abstracts</collection><collection>Neurosciences Abstracts</collection><collection>Nucleic Acids Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Virology and AIDS Abstracts</collection><collection>Agricultural Science Collection</collection><collection>Health & Medical Collection</collection><collection>ProQuest Central (purchase pre-March 2016)</collection><collection>Biology Database (Alumni Edition)</collection><collection>Education Database (Alumni Edition)</collection><collection>Medical Database (Alumni Edition)</collection><collection>Science Database (Alumni Edition)</collection><collection>STEM Database</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>ProQuest SciTech Collection</collection><collection>ProQuest Technology Collection</collection><collection>ProQuest Natural Science Collection</collection><collection>Hospital Premium Collection</collection><collection>Hospital Premium Collection (Alumni Edition)</collection><collection>ProQuest Central (Alumni) (purchase pre-March 2016)</collection><collection>Research Library (Alumni Edition)</collection><collection>Materials Science & Engineering Collection</collection><collection>ProQuest Central (Alumni Edition)</collection><collection>ProQuest One Sustainability</collection><collection>ProQuest Central UK/Ireland</collection><collection>Social Science Premium Collection</collection><collection>Advanced Technologies & Aerospace Collection</collection><collection>Agricultural & Environmental Science Collection</collection><collection>ProQuest Central Essentials</collection><collection>Biological Science Collection</collection><collection>eLibrary</collection><collection>ProQuest Central</collection><collection>Technology Collection</collection><collection>Natural Science Collection</collection><collection>Earth, Atmospheric & Aquatic Science Collection</collection><collection>Environmental Sciences and Pollution Management</collection><collection>ProQuest One Community College</collection><collection>Education Collection</collection><collection>ProQuest Materials Science Collection</collection><collection>ProQuest Central Korea</collection><collection>ANTE: Abstracts in New Technology & Engineering</collection><collection>Engineering Research Database</collection><collection>Health Research Premium Collection</collection><collection>Health Research Premium Collection (Alumni)</collection><collection>ProQuest Central Student</collection><collection>Research Library Prep</collection><collection>Aerospace Database</collection><collection>Copper Technical Reference Library</collection><collection>AIDS and Cancer Research Abstracts</collection><collection>SciTech Premium Collection</collection><collection>Materials Research Database</collection><collection>ProQuest Computer Science Collection</collection><collection>Consumer Health Database (Alumni Edition)</collection><collection>ProQuest Health & Medical Complete (Alumni)</collection><collection>Materials Science Database</collection><collection>Civil Engineering Abstracts</collection><collection>ProQuest Engineering Collection</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>ProQuest Biological Science Collection</collection><collection>Computer and Information Systems Abstracts Academic</collection><collection>Computer and Information Systems Abstracts Professional</collection><collection>Agricultural Science Database</collection><collection>Education Database</collection><collection>Consumer Health Database</collection><collection>Health & Medical Collection (Alumni Edition)</collection><collection>Medical Database</collection><collection>Research Library</collection><collection>Science Database</collection><collection>Algology Mycology and Protozoology Abstracts (Microbiology C)</collection><collection>Biological Science Database</collection><collection>Engineering Database</collection><collection>Research Library (Corporate)</collection><collection>Advanced Technologies & Aerospace Database</collection><collection>ProQuest Advanced Technologies & Aerospace Collection</collection><collection>Biotechnology and BioEngineering Abstracts</collection><collection>Environmental Science Database</collection><collection>Earth, Atmospheric & Aquatic Science Database</collection><collection>Materials Science Collection</collection><collection>ProQuest One Education</collection><collection>ProQuest One Academic Eastern Edition (DO NOT USE)</collection><collection>ProQuest One Academic</collection><collection>ProQuest One Academic UKI Edition</collection><collection>ProQuest Central China</collection><collection>Engineering Collection</collection><collection>Environmental Science Collection</collection><collection>ProQuest Central Basic</collection><collection>University of Michigan</collection><collection>Genetics Abstracts</collection><collection>MEDLINE - Academic</collection><jtitle>Science (American Association for the Advancement of Science)</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Sanvitto, Daniele</au><au>Pulizzi, Fabio</au><au>Shields, Andrew J.</au><au>Peter C. M. Christianen</au><au>Holmes, Stuart N.</au><au>Simmons, Michelle Y.</au><au>Ritchie, David A.</au><au>Maan, Jan C.</au><au>Pepper, Michael</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Observation of Charge Transport by Negatively Charged Excitons</atitle><jtitle>Science (American Association for the Advancement of Science)</jtitle><addtitle>Science</addtitle><date>2001-10-26</date><risdate>2001</risdate><volume>294</volume><issue>5543</issue><spage>837</spage><epage>839</epage><pages>837-839</pages><issn>0036-8075</issn><eissn>1095-9203</eissn><coden>SCIEAS</coden><abstract>We report transport of electron-hole complexes in semiconductor quantum wells under applied electric fields. Negatively charged excitons (X-), created by laser excitation of a high electron mobility transistor, are observed to drift upon applying a voltage between the source and drain. In contrast, neutral excitons do not drift under similar conditions. The X-mobility is found to be as high as$6.5 \times 10^4\>cm^2\>V^{-1}\>s^{-1}$. The results demonstrate that X-exists as a free particle in the best-quality samples and suggest that light emission from opto-electronic devices can be manipulated through exciton drift under applied electric fields.</abstract><cop>Washington, DC</cop><pub>American Society for the Advancement of Science</pub><pmid>11577201</pmid><doi>10.1126/science.1064847</doi><tpages>3</tpages><oa>free_for_read</oa></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 0036-8075 |
| ispartof | Science (American Association for the Advancement of Science), 2001-10, Vol.294 (5543), p.837-839 |
| issn | 0036-8075 1095-9203 |
| language | eng |
| recordid | cdi_proquest_miscellaneous_743105648 |
| source | American Association for the Advancement of Science; Jstor Complete Legacy |
| subjects | Collective excitations (including excitons, polarons, plasmons and other charge-density excitations) Collective excitations (including plasmons and other charge-density excitations) Condensed matter: electronic structure, electrical, magnetic, and optical properties Drains Electric fields Electric potential Electron density Electron states and collective excitations in thin films, multilayers, quantum wells, mesoscopic and nanoscale systems Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures Electrons Exact sciences and technology Exciton theory Excitons Experiments Hydrogen Laboratories Lasers Light Mechanics (Physics) Mobility Observation Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation Optical properties of low-dimensional, mesoscopic, and nanoscale materials and structures Physics Quantum Mechanics Quantum wells Semiconductors Surface and interface electron states Transistors |
| title | Observation of Charge Transport by Negatively Charged Excitons |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-02-02T00%3A08%3A44IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-gale_proqu&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Observation%20of%20Charge%20Transport%20by%20Negatively%20Charged%20Excitons&rft.jtitle=Science%20(American%20Association%20for%20the%20Advancement%20of%20Science)&rft.au=Sanvitto,%20Daniele&rft.date=2001-10-26&rft.volume=294&rft.issue=5543&rft.spage=837&rft.epage=839&rft.pages=837-839&rft.issn=0036-8075&rft.eissn=1095-9203&rft.coden=SCIEAS&rft_id=info:doi/10.1126/science.1064847&rft_dat=%3Cgale_proqu%3EA80061943%3C/gale_proqu%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=213569050&rft_id=info:pmid/11577201&rft_galeid=A80061943&rft_jstor_id=3085073&rfr_iscdi=true |