Photosensitive GeO2-SiO2 films for ultraviolet laser writing of channel waveguides and bragg gratings with Cr-loaded waveguide structure

Photosensitive GeO2-SiO2 films for ultraviolet laser writing of channel waveguides and bragg gratings with Cr-loaded waveguide structure

Irradiation with intense ultraviolet laser pulses induced a large refractive-index change in 30GeO2-70SiO2 waveguide-grade thin films prepared by the plasma-enhanced chemical vapor deposition method, which contained a large amount of photoactive Ge2+ defects. The maximum index change in the as-depos...

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Veröffentlicht in:Applied optics (2004) 2003-08, Vol.42 (22), p.4594-4598
Hauptverfasser: Takahashi, Masahide, Sakoh, Akifumi, Ichii, Kentaro, Tokuda, Yomei, Yoko, Toshinobu, Nishii, Junji
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container_end_page 4598
container_issue 22
container_start_page 4594
container_title Applied optics (2004)
container_volume 42
creator Takahashi, Masahide
Sakoh, Akifumi
Ichii, Kentaro
Tokuda, Yomei
Yoko, Toshinobu
Nishii, Junji
description Irradiation with intense ultraviolet laser pulses induced a large refractive-index change in 30GeO2-70SiO2 waveguide-grade thin films prepared by the plasma-enhanced chemical vapor deposition method, which contained a large amount of photoactive Ge2+ defects. The maximum index change in the as-deposited films by KrF and XeF excimer laser irradiation was estimated to be 1.2 x 10(-3) and 0.28 x 10(-3), respectively. These results clearly indicate that the photorefractivity of GeO2-SiO2 glasses is due to a Ge2+ defect in origin. The channel waveguide and the planar Bragg gratings were directly written in the photoactive Ge(2+)-enriched GeOs-SiO2 thin films by pulsed ultraviolet laser irradiation with a Cr-metal-loaded-type waveguide structure.
doi_str_mv 10.1364/AO.42.004594
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title Photosensitive GeO2-SiO2 films for ultraviolet laser writing of channel waveguides and bragg gratings with Cr-loaded waveguide structure
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