Electron- or hole-assisted reactions of H defects in hydrogen-bonded KDP

We present an ab initio study of the stability and defect reactions of neutral and charged H interstitial (H(i)) and H vacancy (H(v)) in KH2PO4 (KDP). We find that while there is no interaction between the neutral H(i) and the host, the addition of an electron leads to the ejection of a H host atom...

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Veröffentlicht in:Physical review letters 2003-07, Vol.91 (1), p.015505-015505, Article 015505
Hauptverfasser: Liu, C S, Kioussis, Nicholas, Demos, S G, Radousky, H B
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creator Liu, C S
Kioussis, Nicholas
Demos, S G
Radousky, H B
description We present an ab initio study of the stability and defect reactions of neutral and charged H interstitial (H(i)) and H vacancy (H(v)) in KH2PO4 (KDP). We find that while there is no interaction between the neutral H(i) and the host, the addition of an electron leads to the ejection of a H host atom and the subsequent formation of an interstitial H2 molecule and a H(v). In sharp contrast, the addition of a hole results in the formation of a hydroxyl bond. Thus, H(i) in both charged states severs the H-bonded network. For the H(v), the addition of a hole leads to the formation of a peroxyl bridge. The neutral H(i) and the positively charged H(v) induce states in the gap. The results elucidate the underlying atomic mechanism for the defect reactions suggested by experiment.
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title Electron- or hole-assisted reactions of H defects in hydrogen-bonded KDP
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